• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.25.1-25.1
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• 2011

• Journal of the Optical Society of Korea
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• 제20권5호
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• pp.575-578
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• 2016

The thermal endurance of fiber Bragg gratings (FBGs), written with the aid of 193-nm ArF excimer laser irradiation on H₂-loaded Ge/B codoped silica fiber, and pretreated with a CO₂ laser and a subsequent slow cooling process, is investigated. These treated gratings show relatively less degradation of grating strength during the thermal annealing procedure. The thermal decay characteristics of treated and untreated fiber, recorded over a time period of 9 hours, have been compared. The effect on the Bragg transmission depth (BTD) and the center-wavelength shift, as well as the growth of refractive-index change during the grating inscription process for both treated and untreated fiber, are analyzed.

• 한국광학회지
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• 제6권3호
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• pp.201-213
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• 1995

전자빔여기 XeF$(C\rightarrowA$ 엑시며 레이저의 상준위 B-와 C-상태에 대하여 충동혼합 운동과정을 포함하는 모델을 컴퓨터 시뮬레이션하여 이의 출력특성을 해석하였다 $XeF^*(B)$ 의 수밀도에 관련되는 $XeF^*(C)$의 형성에 대하여 레이저 에너지를 실험치와 비교하였다. 이 결과는 70ns[FWHM]의 전자빔(800kV, 21kA)을 사용한 대기압 매질에서 매우 좋은 일치$(28.5 mJ\pm5%)$를 보였고, $Xe/F_2/Ar=5.26/0.49/94.28%$의 최적화된 가스혼합비를 확인하였다. 또한 시뮬레이션으로 $XeF^*(C)$의 형성경로, $XeF^*(C)$의 완화경로, 청록색 파장대역의 흡수경로에 대한 $F_2$ 할로겐 도우너 및 Xe 압력의 함수관계를 조사하였다.

• Macromolecular Research
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• 제12권5호
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• pp.540-543
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• 2004

Surface treatment using an excimer pulse laser beam has been conducted in order to increase the adhesive strength of vulcanized rubber. The adhesive strength increased with increasing the number of irradiation time with laser pulses and reached to 1,500 N/m after 100 cycles of irradiation. Increased in energy density was directly proportional to the improvement of the adhesive strength. Maximum value of the adhesive strength of 1,500 N/m obtained at the energy density of 176 mJ/$\textrm{cm}^2$. We conclude that an increased energy density improves in both the surface area and adhesive strength.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• 한국광학회지
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• 제6권3호
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• pp.214-221
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• 1995

레이저매질의 넓은 압력범위(0.5-3.5 기압)에 대해 70ns[FWHM]의 전자빔 가속기(800kV, 21kA)로 여기할 때 free-running XeF$(C\rightarrowA$ 엑시머 레이저의 출력과 Xe 농도와의 상호관계를 조사하였다. 공진기를 쌍색성의 출력거울로 구성하고, 레이저 출력을 레이저매질 $(Xe/F_2/Ar)$의 총압력과 가스혼합비의 함수로써 최적화 하였다. $F_2$ 0.46%를 고정한 조건에서 레이저 고유효율은 총압력 1, 2, 3기압에서 최대 0.38%, 1.03%, 0.29%로 측정되었다. 이때 레이저의 최대 고유효율은 레이저매질의 총압력이 낮을수록 높은 Xe 농도에서 높게 나타났다. 이같은 상호관계를 $XeF^*(C)$의 형성효율 및 XeF$(C\rightarrowA$ 레이저 추출 효율에 대해 동력학적으로 해석하므로써 Xe 농도의 의존성을 설명하였다. 그 결과로 대기압 XeF$(C\rightarrowA$ 레이저의 효율적인 동작을 제안한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.79-82
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• 1989

We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1149-1151
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• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1550-1552
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• 1996

Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1301-1303
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• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.