• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 전자공학회논문지A
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• 제30A권12호
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• 한국세라믹학회지
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• 제35권12호
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• pp.1336-1336
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• 1998

2단계 열탄소환원법으로 탄화규소 휘스커를 Ar과 H2분위기에서 기상-고상, 2단계, 기상-액상-고상 성장기구를 통해 각각 합성하였다. Ar분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다. SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) 이때 전체 반응속도는 세번째 반응에 참여하는 탄소에 의해 지배되었다. 따라서 이 반응이 휘스커 합성의 율속반응으로 판단되었다. 한편 H2 분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다.SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) 이때 전체 반응속도는 SiO(v) 기체의발생 속도에 의해 지배되었다. 따라서 첫번째 반응이 휘스커 합성의 율속 반응인 것으로 판단되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.426-428
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• 1989

As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 학술대회 논문집 전문대학교육위원
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• pp.155-159
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• 2007

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, $Ar-SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =$0.01{\sim}300$[Td], P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.106-109
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• 2002

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar + $SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =0.01${\sim}$300[Td]. P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF. PT.SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

• 대한수의학회지
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• 제35권2호
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• pp.229-236
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• 1995

The effect of ${\alpha}_1$-adrenoceptor(${\alpha}_1$-AR) stimulation on intracellular pH($pH_i$), $Na^+$ activity($a_{Na}{^i}$) and contractility were investigated in isolated papillary muscles of euthyroid or hyperthyroid guinea pig with conventional microelectrode, $Na^+$ or $H^+$-selective microelectrodes, and tension transducer. Stimulation of the ${\alpha}_1$-AR by phenylephrine produced a decrease in $a_{Na}{^i}$ in euthyroid preparations. This decrease in $a_{Na}{^i}$ was abolished in presence of PKC activator, phorbol dibutyrate, and increased contrary to decrease. Phenylephrine also increased $a_{Na}{^i}$ in hyperthyroid ones. However, phenylrephtine produced an increase in $pH_i$ in both euthyroid and hyperthyroid ones. These changes were blocked by prazosin, an antagonist of ${\alpha}_1$-AR. These findings suggest that the changes in $a_{Na}{^i}$ and $pH_i$ are mediated by a stimulation of $Na^+-H^+$ exchange via ${\alpha}_1$-AR stimulation. This study focused on the increase in $a_{Na}{^i}$, $pH_i$ and contractility. The increase in $pH_i$ was blocked by amiloride or EIPA, $Na^+-H^+$ exchange inhibitors. Therefore, the increase in $a_{Na}{^i}$ and $pH_i$ mediated by ${\alpha}_1$-AR appeared to be due to an influx of $Na^+$ and a reduction of $H^+$ through $Na^+-H^+$ exchange. This study also revealed that the increase in $pH_i$ and $a_{Na}{^i}$ might be related to the sustained positive inotropic response. The $a_{Na}{^i}$ increase may contribute to the intracellular $Ca^{2+}$ through the $Na^+-Ca^{2+}$ exchange, and the $pH_i$ increase could cause an increase in the $Ca^{2+}$ sensitivity of myofilaments and may augment the ${\alpha}_1$-AR-mediated positive inotropic response.

• 자원리싸이클링
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• 제20권4호
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• pp.71-77
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• 2011

$MoO_3$ 분말을 723 K ~ 873 K에서 Ar+$H_2$ 혼합기체를 이용히여 수평관상로에서 $MoO_2$로 훤원하였으며, 반용속도를 배가스 중의 상대습도를 측정하여 계산하였다. 반응속도는 수소가스 분압과 반응속도에 따라 현저하게 증가하였다. 환원 반응초기에 $H_2O$의 발생속도가 급격하게 증가하였으며, 시간의 경과에 따라 배가스 중의 $H_2O$ 분압은 급격하게 감소하였다. 이 시기에 환원 반응율은 직선적으로 증가하였다. 환원반응 초기의 $MoO_3$에서 $MoO_2$로의 환원반응의 활성화 에너지는 73.56 kJ/mol로 계산되었다.