• Elastomers and Composites
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• v.34 no.2
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• pp.128-134
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• 1999

Steel tire cords were coated via RF plasma polymerization of acetylene and butadiene gas in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TCAT and T-test as a function of type of gas, plasma powder, treatment time, gas pressure and Ar gas etching. Some samples were subjected to aging study in distilled water at $80^{\circ}C$ for a period of 7 days. After testing, tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained at 20W, 2min and 25mtorr for acetylene plasma polymerization, and l0W, 4min, 25mtorr for butadiene plasma polymerization. However, Ar plasma etching did not affect adhesion, while the adhesion of tire cords increased rather than decreased, contrary to expectations. It was not possible to elucidate failure mode by SEM, owing to the rough surface of the tire and the thin plasma polymer coating layer.

• Applied Chemistry for Engineering
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• v.30 no.3
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• pp.358-364
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• 2019

To improve the optical characteristics and antifouling of anti-reflective coating (AR) films, various AR coating films were prepared by varying the mixing ratio of tetraethylorthosilicate (TEOS)/base and methyltrimethoxysilane (MTMS)/acid hybrid solution. Prepared AR coating films were characterized by UV-Vis spectroscopy, contact angle analyzer, atomic force microscope (AFM), FT-IR and pencil scratch hardness test. In an AR coating film that prepared from the hybrid solution with a 10 wt% MTMS/acid solution, the glass substrate showed an excellent optical property (97.2% transmittance), good antifouling ($121^{\circ}$ water contact angle and $90^{\circ}\;CH_2I_2$ contact angle) and moderate mechanical strength (pencil hardness of 4 H). In particular, it is considered that the good antifouling was due to the well dispersion of the methyl group ($-CH_3$), derived from a small amount of MTMS/acid solution in the hybrid solution, on the substrate surface. From results of the pencil hardness test, the mechanical strength of AR coating film was improved as the content of MTMS/acid solution increased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.35.2-35.2
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• 2008

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.152-160
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• 1993

In this study, we have investigated the influence of sputtering conditions (Ar pressure input powers, substrates) on coercivity and microstructures of GdFe, Co, CoCr thin films produced by the method of DC magnetron sputtering. In GdFe films, we have observed that the Gd atomic ratio was decreased with the deposition rate, and deposition rate decreased with the pressure of Ar gas and the increased linearly with input power. It was also observed that the coercivity of thin films was increased with input power. In Co films, we have investigated the deposition was increased and the Co thin film became finer structure with the increase in the input power, was increased and the Co thin film became finer structure with the increase in the input power, and the deposition rate was decreased with the pressure of Ar gas. In CoCr films, we have investigated the effects of substrates on the coercivity $(H_c)$ and the microstructure. We have found that the substrates plays a crucial role in the microstructure and the coercivity $(H_c)$.

• Journal of Hydrogen and New Energy
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• v.16 no.2
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• pp.180-190
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• 2005

The PSA cycle was performed for the separation of binary gas mixture $H_2/Ar$ (80%/20%) using the six-step two-bed process. Adsorption equilibrium contains a LRC model for equilibrium adsorption isotherms and a LDF model for mass transfer. Aspen ADSIM, simulator was applied to predict the separation performance. The effect of cycle parameters such as feed rate, adsorption pressure and P/F ratio on the separation of hydrogen has been studied in experiment and simulation. In the results, maximize the recovery of hydrogen as a high purity was 13LPM feed flowrate, 120sec adsorption time, 11atm adsorption pressure and 0.1 P/F ratio in a cyclic steady-state come out since 10th cycle.

• Journal of The Korean Astronomical Society
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• v.34 no.2
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• pp.111-117
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• 2001

Recently, we have set up a new digital CCD camera system, MicroMax YHS-1300 manufactured by Roper Scientific for Ha observation by Solar Flare Telescope at Bohyunsan Optical Astronomy Observatory. It has a 12 bit dynamic range, a pixel number of 1300$\times$1030, a thermoelectric cooler, and an electric shutter. Its readout speed is about 3 frames per second and the dark current is about 0.05 e-/p/s at $-10^{\circ}C$. We have made a system performance test by confirming the system linearity, system gain, and system noise that its specification requires. We have also developed a data acquisition software which connects a digital camera con-troller to a PC and acquires H$\alpha$ images via Microsoft Visual C++ 6.0 under Windows 98. Comparisons of high quality H$\alpha$ images of AR 9169 and AR 9283 obtained from SOFT with the corresponding images from Learmonth Solar Observatory in Australia confirm that our H$\alpha$ digital observational system is performed properly. Finally, we present a set of H$\alpha$ images taken from a two ribbon flare occurred in AR 9283.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.245-248
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• 2002

In this paper, the influence of Si surface damage on the NiSi formation has been characterized. The silicon surface is damaged using ion beam type spotter. Then, the effect of H2 anneal and TiN capping layer on the damaged has also been analyzed. The sheet resistance of NiSi formed on damaged Si increased rapidly as the damaging time increases while thermal stability of damaged NiSi was stabler than the undamaged one. In the case when H\ulcorner anneal and TiN capping layer were applied together, the characteristics of NiSi shows a little improvement of the sheet resistance.

• Solar Energy
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• v.20 no.2
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• pp.55-65
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• 2000

Better electrical and optical properties of ITO thin films were demanded for the window layer of CdS/CdTe solar cells. To match that demand, an ion beam sputtering system was used for the deposition of ITO thin films. The substrate temperature and ion beam energy were controlled to deposit high quality ITO thin films in two cases of Ar ion sputtering and Ar+$O_2$ ion sputtering. The microstructure changed from domain structure in ITO deposited by Ar ions to grain structure in ITO deposited by Ar+$O_2$ ions. The lowest resistivity of ITO films was $1.5\times10^{-4}{\Omega}cm$ at $100^{\circ}C$ substrate temperature in case of Ar ions sputtering. Transmittance in the visible range was over 80% above $100^{\circ}C$ substrate temperature.