• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.117-118
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• 2011

초경합금 위에 RF Magnetron Sputter를 이용하여 Ti 중간층을 증착 후 MPECVD(Microwave Plasma Enhanced Chemical Vapor Deposition) 시스템을 이용하여 나노결정 다이아몬드 박막을 증착 하였다. 공정압력, 마이크로웨이브 전력, Ar/$CH_4$ 조성비, 기판온도를 일정하게 놓고 직류 bias의 인가 여부를 변수로 하고 증착시간을 0.5, 1, 2시간으로 변화시켜 박막을 제작하였다. 제작된 시편은 FE-SEM과 AFM을 이용하여 다이아몬드 박막의 표면과 다이아몬드 박막의 표면 거칠기 등을 측정하였고, Raman spectroscopy와 XRD를 이용하여 다이아몬드 결정성을 확인하였다. Automatic Scratch �岵謙�ter를 이용하여 복합박막의 층별 접합력을 측정하였다. 바이어스를 인가하지 않고 다이아몬드 박막을 증착할 경우 증착 시간이 증가할수록 다이아몬드 입자의 평균 크기가 증가하며 입자들이 차지하는 면적이 증가하는 것을 확인하였다. 그러나 1시간이 경과해도 아직 완전한 박막은 형성되지 못하고 2시간 이상 증착 시 완전한 박막을 이루는 것이 확인되었다. 이에 비해서 바이어스 전압을 인가할 경우 1시간 내에 완전한 박막을 이루었다. 표면 거칠기는 바이어스를 인가한 경우가 그렇지 않은 경우에 비해서 조금 높은 것으로 나타났다. 이러한 바이어스 효과는 표면에서의 핵생성 밀도 증가와 재핵생성 속도 증가에 기인하는 것으로 해석된다.

• 한국화재소방학회:학술대회논문집
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• 한국화재소방학회 1997년도 International Symposium on Fire Science and Technology
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• pp.518-525
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• 1997

A series of measurements and visualization to investigate the interaction of water sprays with pool fires is presented. Fire source is a small-scale pool burner with methanol, ethanol and gasoline. Measurements of temperatures, $O_2$, $CO_2$, and CO concentrations along the plume centerline are carried out to observe pool fire structures without water sprays. Visualization by the Ar-ion laser sheet shows flow pattern of droplets of the sprays above the pool fires. It is observed that in the case of methanol and ethanol, water sprays continuously penetrate into the center of fuel surfaces. The gasoline pool fire allows intermittent penetration of water sprays because of pulsating characteristics of the gasoline flame. To evaluate the cooling effect of the fuel surface by the sprays, the temperature was measured at the fuel surface. As soon as the mists reach the fuel surface of methanol and ethanol, the temperatures of the fuel surface decrease rapidly below the boiling point, and then the fires are extinguished. Due to the application of mist upon the gasoline fire, though the fuel temperature decrease abruptly at the time of the injection, such a rapid decrease do not continue till the extinction point.

• 한국표면공학회지
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• 제46권2호
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 한국자기학회지
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• 제16권4호
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• pp.197-200
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• 2006

RF magnetron reactive sputtering법으로 CoFeHfO 박막을 상온에서 제작하여 산소분압에 따른 포화자화, 보자력, 이방성자계를 조사하였다. 최적조건인 산소분압 8%에서 제조한 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막은 포자자속밀도($4{\pi}M_s$) 19kG, 보자력($H_c$) 0.37Oe, 이방성자계($H_k$) 48.62Oe의 우수한 연자성을 나타내었다. CoFeHfO 박막의 전기비저항은 산소분압이 늘어남에 따라 증가하는 경향을 나타내었으며 우수한 연자기적 성질을 가지는 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막의 경우, 300 ${\mu}{\Omega}cm$의 높은 전기비저항과 48.62 Oe의 높은 이방성자계 때문에 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$박막이 고주파에서 우수한 연자기 특성을 가지는 것으로 사료된다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 춘계학술대회 논문집
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• pp.365-372
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• 2004

1)고강도강 BOP 시험 결과 강종에 차이 없이 용접속도에 따라 유사한 비드 형상을 가지는 것으로 나타났다. 한편 1.2t 시험편의 적정 용접속도는 $4\~8m/min$으로 나타났다. 2) 용접속도가 빠를수록 비드폭은 작아지며, 경도값은 높게 나타났다. 그리고, 최고 경도값은 강의 성분(Ceq)에 비례하는 것으로 나타났음, 그 결과 TRIP80(Ceq=0.53)의 경우 최고 520Hv이상의 경도값을 가지고 있었다. 3) LDH test 결과 DP강의 모재대비 용접부의 성형성이 약 $90\%$ 정도로 나타났으며, TRIP 및 일반 고강도강은 약 $80\%$의 성형성을 갖는 것으로 확인되었다. 4) He을 보호가스로 사용시 기공의 형성은 크게 억제되었다. 그리고 Ar 사용시에는 기공 형성이 He에 비해 많이 형성되는 것으로 나타나 사용시 주의가 필요한 것으로 보인다. 기공 형성은 TRIP > 60C/45R > DP 순서로 나타나 DP강이 가장 좋은 레이저 용접성을 가지고 있었다.

• Journal of Welding and Joining
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• 제16권4호
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• pp.39-46
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• 1998

$CO_2$ gas shielded arc welding has been characterized with its harsh arc compared to Ar-based shielding gases and with its high level of spattere specially in welding current range of 250~300 amperes. In this range of welding current, the metal transfer mode showed to be changed from short circuit to globular with the increase of welding voltage resulting in so-called the transitional mode in which both modes of transfer appeared together. To characterize the transitional mode, the short circuit events were divided into two groups, i.e. normal short circuit (N.S.C) which has short circuit time $(t_s)$ over 2msec and instantaneous short circuit (I.S.C) of $t_s$$\leq$2msec. The experimental results showed that the number of N.S.C decreased almost linearly with the increase of welding voltage and appeared to be not related with spatter generation rate. However I.S.C became to be pronounced in the transitional condition and its number reached the maximum value at around 29.0 volts. Considering the relation with the spatter generation rate, it was found that the number of I.S.C had a very strong correlation with the spatter generation rate of the transitional condition. It was further demonstrated that spatter generation rate decreased quite linearly with the decrease of I.S.C frequency. It implies that I.S.C is the most important waveform factor controlling the spatter generation of the transitional mode, i.e. in the middle range of welding current. Based on these results, It was discussed that in the transitional mode the basic concept of waveform control for suppressing spatter generation would be different from the one applied for typical short circuit transfer mode of low welding current.

• 한국대기환경학회지
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• 제22권5호
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• pp.661-678
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• 2006

Products developed in this research is a software which can transfer the type of shape(.shp) into the type of ascii using the land cover data and the topography data in the metropolitan area of Seoul. In addition, it can calculate the $CO_2$ flux according to distribution of plants within the land cover data. The $CO_2$ flux is calculated by the experimental equation which is compose of the meteorological parameters such as the solar radiation and the air temperature. The net flux was shown in about $-19ton/km^2$ by removing $CO_2$ through the photosynthesis during daytime, and in 2 ton/km2 by producing it through the respiration during nighttime on 10 August 2004, the maximum day of air temperature during the period of 3yr(2001 to 2004), in the metropolitan area of Seoul. Spatial distribution of the air temperature and the wind field is simulated by substituting the middle classification of the land cover map data, upgraded by the Korean Ministry of Environment(KME), for the land-use data of the United States Geological Survey(USGS) within the Meteorological Mesoscale Model Version 5(MM5) on 10 August 2006 in the metropolitan area of Seoul. Difference of the air temperature between both data was shown in the maximum range of $-2^{\circ}C\;to\;2.9^{\circ}C$, and the air temperature due to the land use data of KME was higher than that of USGS in average $0.4^{\circ}C$. Also, those of wind vectors were meanly lower than that of USGS in daytime and nighttime. Furthermore, the hourly time series of Volatile Organic Components(VOCs) is calculated by using the Biosphere Emission and Interaction System Version 2(BEIS2) including the new land cover data and the meteorological parameters such as the air temperature and so]ar insolation. It is possible to calculate the concentration of ozone due to the biogenic emission of VOCs.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2011년도 추계학술논문집 2부
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• pp.379-381
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• 2011

본 논문에서는 피복아크용접(SMAW)을 자동용접으로(GMAW) 전환시키기 위한 기초 연구로서 GMA용접가스가 기공율에 미치는 영향을 보고자 한다. 기공율 평가를 위해 반자동 소방용 분기배관실험장치를 제작하였다. 분기배관의 기공율을 평가하기 위해 보호가스 3종(Ar, $CO_2$, 8:2 혼합가스), 전압을 변수로 설정하여 GMA용접을 실시하였다. 용접을 실시한 시편을 용접방향으로 절단하여 기공율 평가를 실시하였다.