• Korean Journal of Materials Research
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• v.4 no.8
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• pp.952-957
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• 1994

Fe/Co and FeN/CoN multilayer films were prepared by using RF and DC magnetron sputter^ ing technique with Ar or a mixture of Ar and $N_{2}$ gas. Annealing treatment was carried out in a vacuum at temperatures between $100^{\circ}C$ and $500^{\circ}C$ for lhour. Saturation magnetization (MS) and coercivity (Hc) of Fe/Co mutilayer films were investigated as a function of Fe layer thickness and annealing temperature. Permeability ($\mu$) was also examined. Saturation magnetization of 1.8T and coercivity of 1.80e were obtained for the as-deposited Fe/Co($70 \AA /15 \AA$) multilayer film. The Coercivity(Hc) did not change from 1.8 Oe till the annealing temperature $250^{\circ}C$ and then increased rapidly at higher annealing temperatures above $300^{\circ}C$. Coercivity(Hc) measured for the as-deposited FeN/CoN multilayer film was 5 Oe. It decreased gradually with annealing up to $250^{\circ}C$, and then increased rapidly at higher tempera tures.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.98-103
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• 1999

We have studied changes of coercivity $(H_c)$, exchange anisotropy field $(H_{ex})$ and MR ration in glass/Ta/NiFeI/CoI(t)/Cu/CoII(3/4 t)/NiFeII/FeMn spin valve structures by changing Ar pressure and thicknesses of Co layers using DC, RF sputtering methods. We obtained minimum coercivity of 2.8 Oe at 4 mTorr of Ar pressure, exchange anisotropy field of 50.0 Oe at 6 mTorr and 5.3 % of MR ratio at 10 mTorr. Also, we obtained 3.0 Oe of coercivity at 40 $\AA$ of CoI layer, 65.9 Oe at 13 $\AA$ and 4.7 % of MR ratio at 27 $\AA$ and 34 $\AA$ by changing the thicknesses of Co layers.

• Journal of the Korea Society of Computer and Information
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• v.14 no.9
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• pp.37-46
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• 2009

The movement of the MR loaded on the train is confined to the bidirectional movement along the rail. Therefore, the AR connected to the MR can use the address information of the neighboring ARs and configure CoA in advance before performing L2 and L3 handoff. The MR can acquire new CoA immediately from the present AR after the movement detection procedure. The performance analysis shows that the proposed scheme can provide CoA to the MR about 1.8(s) at minimum and 4.98(s) at maximum faster than the Stateless scheme because the proposed scheme does not carry out any additional CoA and DAD procedure unlike the Stateless scheme.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.139-144
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• 2004

Recently, the importance of clean vacuum and partial pressure measurement of gas species has been increased in the vaccum process. In this study, the partial pressures of $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$(CO), Ar, $CO_2$ were measured by residual gas analyzer according to temperature of cryogenic pump which is used to clean vacuum generation and compared. The experimental results showed that the cryopanel temperature was reached to 12K after 72 minutes of pumping and after 25hours, the partial pressures in percent were 24.9 %, 6.6%, 5.5 %, 2.2 %, 3.8%, 30.7%, 6.5%, 6.1 %, 5.5%, 8.2% for $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$, Ar, $CO_2$ respectively. The dominant gases were $H_2$ and $H_2O $, and the partial pressures were relatively high compare to other gases.

• Fire Science and Engineering
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• v.18 no.2
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• pp.12-19
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• 2004

The commercially available IG-541 extinguished agent composed of inert gases was developed for environmental protection. The extinguished agents were considered in terms of physical properties, efficient characteristic, environment, stability, and economical efficiency. The pure and mixture components of physical properties of $N_2$, Ar and $CO_2$ were chosen and compared. The physical properties of density, viscosity and surface tension of inert gases were plotted with the molar ratios of $N_2$/$CO_2$ and Ar/$CO_2$ in terms of a temperature. The extinguished agent in the composition of $N_2$, Ar and $CO_2$, 50/40/10 (mol %) showed relatively high density, low viscosity and moderate surface tension, therefore it was suitable for the alternative extinguished agents.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.535-541
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• 2013

The present study was carried out to investigate the effects of welding parameters such as current, voltage and shielding gases on the bead shape, microstructures and hardness. It was confirmed that bead height was lowered and bead depth was increased with increasing voltages while height, depth and width of beads increased with welding currents. The hardness of weld metals with Ar+10% $O_2$ and Ar+20% $CO_2$ was low due to the formation of grain boundary and polygonal ferrites while that of weld metals with Ar+2% $O_2$ was high due to the presence of acicular, bainitic and sideplate ferrites.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.687-693
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• 2002

The surface of polyethersulfone(PES) membrane treated by Ar, $NH_3$ plasma, and the effects were observed before and after the treatment. The membrane treated by Ar plasma was increased the O/C ratio and measured the hydrophilic group, and the one by $NH_3$ plasma was attached the amine group and the amino group. In addition, with the wettability of polyethersulfone membrane $CO_2$ and the polar functional groups of surface interacted increasingly. Thus by comparable increase of the soluble selectivity $CO_2$ to $N_2$ both the permeability and the selectivity of $CO_2$ was improved. The optimum condition for the $CO_2$ permeation and actual separation factor of the plasma treated membrane was as follows; the measurement of Ar-10 W-2 min plasma treatment was $13.19{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$ and 20.12, and the measurement of $NH_3$-50 W-2 min plasma treatment was $15.40{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$ and 20.06.

• Applied Chemistry for Engineering
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• v.25 no.2
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• pp.204-208
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• 2014

This study investigated the effect of hydrogen permeance and selectivity, catalyst amount, $H_2O/CO$ ratio in a feed stream, and Ar sweep gas on the performance of a water gas shift reaction in a membrane reactor. It was observed that a minimum hydrogen selectivity of 100 was needed in a membrane reactor to obtain a hydrogen yield higher than the one at equilibrium and the hydrogen yield enhancement gradually decreased as the hydrogen permeance increased. The CO conversion in a membrane reactor initially increased with the catalyst amount and reached a plateau later for a membrane reactor with a low hydrogen permeance while the high CO conversion independent of a catalyst amount was observed for a membrane reactor with a high hydrogen permeance. For the $H_2O/CO$ ratio in a feed stream higher than 1.5, a hydrogen permeance had little effect on the CO conversion in a membrane reactor and it was found that a minimum Ar molar flow rate of $6.7{\times}10^{-6}mol\;s^{-1}$ was needed to achieve the CO conversion higher than the one at equilibrium in a membrane reactor.

• Fire Science and Engineering
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• v.17 no.2
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• pp.43-49
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• 2003

For the inert gases of Ar, $N_2$and $CO_2$, the empirical equations of the gas mixture were correlated in terms of saturated pressure, density and viscosity. They were obtained by regression analysis based on the mixing rule. The empirical equation of saturated pressure was assumed as the first order function of temperature. The empirical form of density was expressed as compressibility factor and saturated pressure while the empirical equation of viscosity was formulated as a power function of temperature. This empirical equations of the physical properties were obtained in the composition of Ar, $N_2$and $CO_2$, 40/50/10(mol. %).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.62-62
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• 2003

금속-실리콘간 화합물인 실리사이드 중에서, 코발트다이실리사이드(CoSi$_2$)는 비저항이 낮고 선폭이 좁아짐에 따라 면저항이 급격히 증가하는 선폭의존성이 없으며 화학적으로 안정한 재료로 현재 널리 이용되고 있는 재료이다. 또한, 실리콘 (100) 기판과 에피택셜하게 성장한 CoSi$_2$는 우수한 열안정성 과 낮은 juction leakage의 특성을 가지며, shallow junction 형성을 가능하게 하는 많은 장점을 가지고 있어 각광받고 있다. 그러나 순수한 Co의 증착 후속 열처리에 의해 형성된 CoSi$_2$는 (110), (111), (221)등의 다양한 결정방위를 가지게 되어 에피택셜 하게 형성되기 어렵다. 현재까지 Ti, Ta, Zr과 화학 산화막 등의 확산 방지막을 이용하여 에피 택셜하게 성장시키는 많은 방법들이 연구되어 왔으며, 최근에는 본 연구실에서 반응성화학기상증착법으로 Co-C 박막을 증착하여 in-Situ로 에피택셜 CoSi$_2$를 형성하는 새로운 방법을 보고하였다. 본 연구는 반응성 스퍼터링에 의해 증착된 Co-N 박박으로부터 후속 열처리를 통하여 에피택셜 CoSi$_2$를 성장시키는 새로운 방법을 제시하고자 한다. Co-N 박박은 Ar과 $N_2$의 혼합가스 분위기 속에서 Co를 스퍼터링하여 증착하였다. 증착시 혼합가스 내의 $N_2$함량의 변화에 따라 다양한 Co-N 박막이 형성됨을 확인하였다. 후속열처리시 Co-N 박막의 산화를 방지하기 위하여 Ti층을 마그네트론 스퍼터링으로 증착하였으며, Ar 분위기에서 온도에 따른 ex-situ RTA 열처리를 통하여 에피택셜 CoSi$_2$를 성장시킬 수 있었다. 이러한 에피택셜 CoSi$_2$는 특정 한 Ar/$N_2$ 비율 내에서 성장이 가능하였으며, 약 $600^{\circ}C$이상의 열처리 온도에서 관찰되었다.