• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
• /
• pp.75-78
• /
• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30\sim300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The transport coefficients for electrons in (0.2[%])$SF_6$-Ar and (0.5[%]$SF_6$ - Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Journal of Radiation Protection and Research
• /
• 제13권2호
• /
• pp.1-8
• /
• 1988

3MeV에 서 5.4MeV 사이의 $\alpha$-입자에 대한 저지능과 저지 단면적을 He, Ar, 및 $N_2$ 가스에 대해서 측정했다. Srivastava의 저지능 공식을 본 실험결과에 적용시켜 그 타당성을 알아보았다. 그결과 Ar의 경우는 매우 잘 일치됨을 보여주며, He의 경우는 27-28%, $N_2$의 경우는 13-26%의 불일치를 보여주고 있다.

• 마이크로전자및패키징학회지
• /
• 제9권2호
• /
• pp.27-31
• /
• 2002

본 연구에서는 ICP 식각장비에서 700 W의 RF전력과 -200 vo1t의 dc 바이어스 전압 및 15 mTorr의 반응로 압력에서 $Ar/CF_2$ 혼합가스에 $C1_2$가스를 첨가하면서 $CeO_2$ 박막을 식각하였다 최대식각 속도는 10%의 $C1_2$ 가스를 첨가하였을 시에 250 $\AA$/min이었고, 이 조건에서 SBT에 대한 식각 선택비는 0.4이었다. XPS를 이용하여 식각된 $CeO_2$ 박막의 표면반응을 검토하였다. Ce 피크는 대부분 $CeO_2$또는 $Ce_2O_3$형태로 Ce-O 결합상태임을 관찰할 수 있었다. 대부분의 Cl 피크는 CeClx 또는 $Ce_x/O_yCl_z$ 형태로 Ce 원자와 결합하고 있었다

• 대한화학회지
• /
• 제44권3호
• /
• pp.190-193
• /
• 2000

M-Rg 및 M-Rg2 (M=Li,Na,Rg=He,Ar) 반데르발스 복합체들에 대한양자화학적계산을 시행하였다. AIl-electron MP2(6-311++G(3df,3pd))에 의하여 계산된 LiHe, LiAr 및 NaAr의 균형 핵간 거리와 결합 에너지는 실험값과 잘 일치하였다. $LiHe_2,\;LiAr_2$ 및 $NaAr_2$에 대하여 계산된 분광학적 성질들도 또한 계산하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.362-362
• /
• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• 한국화재소방학회논문지
• /
• 제17권2호
• /
• pp.43-49
• /
• 2003

대체 소화제로 사용되는 불활성 기체 중 Ar, $N_2$, $CO_2$에 대한 혼합물에서의 물성(포화압력, 밀도, 점도)에 관한 실험식을 구하였다. Mixing rule에 의해 계산한 값을 이용하여 다항식 등의 회귀분석에 의해서 실험식을 얻었다. 포화압력은 온도에 대하여 1차 실험식으로 표시하였다. 압축인자와 포화압력을 이용하여 온도에 대한 밀도에 관한 실험식을 제시하였다. 점도는 온도에 대한 지수함수로 표시하였다. Ar, $N_2$, $CO_2$혼합물의 조성이 40/50/10(mol. %)에서 열역학적 실험식을 구하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제15권3호
• /
• pp.164-169
• /
• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.415-415
• /
• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• Corrosion Science and Technology
• /
• 제16권6호
• /
• pp.278-284
• /
• 2017

The effects of TIG welding and post-treatment procedures on the microstructure and the pitting corrosion resistance of welded lean duplex stainless steel S82441 were investigated. Autogenous TIG welding was used with different amounts of heat input and shielding gases such as Ar, and mixtures of $Ar-N_2$ and Ar-He. The addition of 5% to 15% of nitrogen to argon practically did not affect the level of the pitting corrosion resistance. However, the application of gas mixtures (50% Ar + 50% He) resulted in a significant decrease in pitting corrosion resistance. We found that increased current (200 A and 250 A) led to lower values of CPT of welds compared with welds obtained with 50 A, 100 A and 150 A. In addition, the removal of the weld surface layer (0.2 ~ 0.3 mm thickness) in most cases not only resulted in a significant increase in resistance to the pitting corrosion but also post-treatment of weld, implying that corrosion resistance depended on factors such as surface roughness or the presence of undesirable oxides.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
• /
• pp.94-94
• /
• 1996