• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.75-78
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• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30\sim300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The transport coefficients for electrons in (0.2[%])$SF_6$-Ar and (0.5[%]$SF_6$ - Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Journal of Radiation Protection and Research
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• v.13 no.2
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• pp.1-8
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• 1988

The energy losses of ${\alpha}$-particle with 3 to 5.4 MeV energy were measured as a function of gas absorber thickness and ${\alpha}$-particle energy in three light gaseous media; He, Ar, and $N_2$. The stopping powers and stopping cross-sections were determined by analyzing these data. For Ar gas, the experimental values are very well consistent with the corresponding values of Srivastava's stopping-power theory with the condition of the completely and partially stripped ion. For $N_2$ and He gases, these experimental values express the inconsistencies of about $13{\sim}36%$ and $27{\sim}28%$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.27-31
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• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

• Journal of the Korean Chemical Society
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• v.44 no.3
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• pp.190-193
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• 2000

ab initio calculations are presented for M-Rg and M-Rg2 (M=Li, Na, Rg=He, Ar) van der Waals clusters.InternucIear distances and binding energies of LiHe, LiAr and NaAr obtained by all-electron MP2(6-311++G(3df,3pd)) method are in good agreement with experimental values. Calculated properties of LiHe$_2$, LiAr$_2$, NaHe$_2$ and NaAr$_2$ are also reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• Fire Science and Engineering
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• v.17 no.2
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• pp.43-49
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• 2003

For the inert gases of Ar, $N_2$and $CO_2$, the empirical equations of the gas mixture were correlated in terms of saturated pressure, density and viscosity. They were obtained by regression analysis based on the mixing rule. The empirical equation of saturated pressure was assumed as the first order function of temperature. The empirical form of density was expressed as compressibility factor and saturated pressure while the empirical equation of viscosity was formulated as a power function of temperature. This empirical equations of the physical properties were obtained in the composition of Ar, $N_2$and $CO_2$, 40/50/10(mol. %).

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• Corrosion Science and Technology
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• v.16 no.6
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• pp.278-284
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• 2017

The effects of TIG welding and post-treatment procedures on the microstructure and the pitting corrosion resistance of welded lean duplex stainless steel S82441 were investigated. Autogenous TIG welding was used with different amounts of heat input and shielding gases such as Ar, and mixtures of $Ar-N_2$ and Ar-He. The addition of 5% to 15% of nitrogen to argon practically did not affect the level of the pitting corrosion resistance. However, the application of gas mixtures (50% Ar + 50% He) resulted in a significant decrease in pitting corrosion resistance. We found that increased current (200 A and 250 A) led to lower values of CPT of welds compared with welds obtained with 50 A, 100 A and 150 A. In addition, the removal of the weld surface layer (0.2 ~ 0.3 mm thickness) in most cases not only resulted in a significant increase in resistance to the pitting corrosion but also post-treatment of weld, implying that corrosion resistance depended on factors such as surface roughness or the presence of undesirable oxides.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.94-94
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• 1996