• 한국세라믹학회지
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• 제30권10호
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• pp.845-851
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• 1993

Low firing temperature substrate were synthesized through tape casting and sintering of glass with cordierite composition and then their properties were investigated. Even though the dielectric properties and XRD patterns of substrates, obtained by tape casting and sintering at 900~100$0^{\circ}C$ for various periods, were similar to those of substrates obtained by dry pressing, the sinterability was enhanced. The substrates were thin and the size was 0.6$\times$50$\times$50mm. From the results of dielectric properties, the sinterability and X-ray diffraction pattern, the proper condition for cofiring process with conductor, Cu, was 90$0^{\circ}C$ for 1h. The properties of the substrate are as follows; the dielectric constant was 5.31(at 1MHz), the dissipation factor was 0.0028, the apparent porosity was 0.28% and the main crystalline phase was $\alpha$-cordierite.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1387-1389
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• 2001

In this paper, the microstructure and the dielectric properties of the $Sr_{1-x}Ca_xTiO_3$($0{\leq}x{\leq}0.2$)-based grain boundary layer ceramics were investigated. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant, ${\varepsilon}_r$ > 50000, and tan$\delta$ < 0.05, $\Delta$C < ${\pm}$ 10%.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• 한국세라믹학회지
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• 제24권6호
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• pp.586-592
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• 1987

The role of the strain energy and phase stability in the diffuse phase transition have been investigated in the highly disordered solid solution, (Pb1-xBax)(Zr0.4Ti0.6)O3 (0.2 x 0.4). X-ray diffraction analysis indicates that tetragonality (c/a) decreases with the increasing Ba content. Also as the Ba content increases, phase transition becomes more diffuse and at the same time dielectric relaxation as a function of measured frequencies in the 1KHz-10MHz range occurs very pronouncedly. In the Ba content range, 0.2 x 0.35, hysteresis loops are routinely observed and the loop is observed to narrow shape as the Ba content increases but becomes very slim at 40mol% Ba content. Moreover thermal analysis shows that there is no abrupt change in the thermal expansion coefficient below the apparent transition temperature at which dielectric constant becomes maximum. From the above results, it has been concluded that creation of the strain energy due to the distorthion that occurred during the phase transition suppresses diffuse phase transition.

• Tribology and Lubricants
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• 제14권3호
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• pp.7-16
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• 1998

The electrorheological (ER) behavior of suspensions in silicone oil of phosphoric ester cellulose powder (average particle size: 17.77 $\mu$m) was investigated at room temperature with electric fields up to 2.5 KV/mm. For development of anhydrous ER suspensions using at wide temperature range, we aimed to know the effect of activation of phosphoric ester cellulose particles on the ER activities. As a first step, the anhydrous ER suspensions mixing with the phosphoric ester cellulose particles which were treated with 2M phosporic acid and 4M urea were measured. After activating the anhydrous ER suspensions at 12$0^{\circ}C$, not only the analysis of dispersing cellulose particles which were reacted by phosphoric ester but also the electrorheological characteristics of ER suspensions such as dielectric constant, current density, electrical conductivity and rheological properties were studied. From the experimental results, the activation of phosphoric ester cellulose particles had an influence on the ER properties of anhydrous ER suspensions. As the activation time went by, the size and number of dispersing particles, the electrical properties and the initial apparent viscosity $(η_0)$ of ER suspensions were increased till the activation time passed 5 hours. Also, it was possible, the electrorheological effect $($\tau$/$\tau$_0)$ of ER fluids was grown by the activation of phosphoric ester cellulose particles.

• 한국세라믹학회지
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• 제20권2호
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• pp.153-160
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• 1983

This study was carried out to research the change of mineral phases and the characteristics(apparent specific gra-vity water absorption firing shrinkage modulus of rupture thermal expansion and specific dielectric constant) of the sintered bodies manufactured by kaolin and limestone. Samples were composed of the same theoretical composition as it of anorthite and fired up to 145$0^{\circ}C$ Investigated the change and micro-structure of the mineral phases by XRD and SEM the characterisdtics of the sintered bodies by TMA Automatic Capacitance Bridge and etc. The results were as follow. 1. Reactions of sintering are occurred between 860-95$0^{\circ}C$ and 1200-138$0^{\circ}C$ and state of bloating is occurred at 1410-145$0^{\circ}C$ 2. For the inclusion of feldspar and its fine particles of materials the temperature of producing and collapsing is decreased. 3. Pseudo-wollastonite and gehlenite are formed about 95$0^{\circ}C$ 4. At 114$0^{\circ}C$ anorthite are begin to forming and increase continuously to 138$0^{\circ}C$. Above 141$0^{\circ}C$ content of anorthite are decreased. 5. The variations of bending strength with sintering temperature reflect similar trend of sintered contraction and in-crease continuously from 120$0^{\circ}C$. At 145$0^{\circ}C$ reached about 680kg/cm2. 6. Specific dielectric constant$($\varepsilon$_s)$ of specimen sintered at 141$0^{\circ}C$ is 7.12 and that value is most favorable.

• 한국결정성장학회지
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• 제17권5호
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• pp.217-222
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• 2007

[ $(1-x)CaWO_4-xYNbO_4$ ]계에 대하여 $YNbO_4(0.05{\leq}x{\leq}0.4)$의 치환량 변화에 따른 마이크로파 유전특성을 고찰하였다. x=0.10 조성까지 정방정(tetragonal) scheelite 구조의 $CaWO_4$ 단일상이 확인되었고, 그 이상 첨가 시 fergusonite 구조의 2차상이 증가하였다. $YNbO_4$ 첨가량이 증가할수록 겉보기 밀도는 감소하였는데, 이는 $CaWO_4(6.117g/cm^3)$보다 $YNbO_4(5.581g/cm^3)$가 더 낮은 이론밀도 값을 갖기 때문이다. $YNbO_4$의 첨가량이 증가함에 따라 유전상수(K)와 품질계수(Qf)는 2차상의 증가와 밀도의 감소로 인해 감소하는 경향을 보였고, $YNbO_4$ 치환량에 따른 소결시편의 공진주파수 온도계수(TCF)의 변화는 존재상의 유전체 혼합 법칙(dielectric mixing rule)에 의존하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.22-22
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• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

• 한국세라믹학회지
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• 제30권8호
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.