• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.54-54
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• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.242-242
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• 2009

Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is $1cm{\times}3cm$, and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.429-429
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• 2009

Nanoporous anodic alumina membranes (NAAM) with high-density through-hole pores fabricated by hard anodization of aluminum in 0.3 M oxalic acid under the applied voltage of 40 (mild anodization), 80, 100, 120 and 140 V were investigated. The current-time responses monitored using a PC-controlled anodization cell and the corresponding pore structures attainable from field-enhanced scanning electron microscopy (FE-SEM) were analyzed in order to establish the optimum fabrication process. The nanoporous structure can be produced for all the voltage conditions, while the stabilized through-hole pore formation seems to occur at 40, 80 and 140 V. The growth rate under 140 V hard anodization was over 30 times higher than under 40 V mild anodization (1.5 um/hr).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.62-63
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• 2008

Photonic crystas were fabricated using an anodic aluminum oxide(AAO) mask on GaN diode. The Photonic crystal structure has been investigated from Atomic Force Microscope(AFM). The hole diameter and lattice constant of photonic crystal are 60nm and 105nm, respectively. Photoluminescence of photonic crystal was enhanced and optical interference was increased by photonic crystal effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.922-925
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• 2003

The interest of self-organization materials that have uniform and regular structure in nano scale has been grown due to their utilization in various fields of nanotechnology. An attractive candidate among these materials is anodic aluminum oxide film, which are formed by anodization of aluminum in an appropriate acid solution. The anodic aluminum oxide film has a highly ordered porous structure with very uniform and nearly parallel pores that can be organized in an almost precise close-packed hexagonal structure. In this study, we attempt to make Au dot arrays, which were fabricated using anodic aluminum oxide film as an evaporation mask. The Au dot arrays have a uniform sized dots and spacing to its neighbors and the average diameter of Au dots is about 60 nm corresponding to them of the mask.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.242-245
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• 2021

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.186-193
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• 2004

Porous anodic alumina has been used widely for corrosion protection of aluminum surfaces or as dielectric material in micro-electronics applications. It exhibits a homogeneous morphology of parallel pores which can easily be controlled between 10 and 400nm. It has been applied as a template for fabrication of the nanometer-scale composite. In this study, mechanical properties of the AAO structures are measured by the nano indentation method. Nano indentation technique is one of the most effective methods to measure the mechanical properties of nano-structures. Basically, hardness and elastic modulus can be obtained by the nano-indentation. Using the nano-indentation method, we investigated the mechanical properties of the AAO structure with different size of nano-holes. In results, we find the hole effect that changes the mechanical properties as size of nano hole.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.112-115
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• 2010

This paper provides the properties of $TiO_2$ nanotube arrays which are fabricated by anodic oxidation of Ti metal. Highly ordered $TiO_2$ nanotube arrays could be obtained by anodic oxidation of Ti foil in $0.3\;wt{\cdot}%$ $NH_4F$ contained ethylene glycol solution at $30^{\circ}C$. The length, pore size, wall thickness, tube diameter etc. of $TiO_2$ nanotube arrays were analyzed by field emission scanning electron microscopy. Their crystal properties were studied by field emission transmission electron microscopy and X-ray photoelectron spectroscopy.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.