• Title/Summary/Keyword: Anodic bonding

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Effects of Anodic Voltages of Photcatalytic TiO2 and Doping in H2SO4 Solutions on the Photocatalytic Activity (광촉매 TiO2의 황산용액에서의 양극산화전압과 도핑이 광촉매 활성에 미치는 영향)

  • Lee, Seung-Hyun;Oh, Han-Jun;Chi, Choong-Soo
    • Korean Journal of Materials Research
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    • v.22 no.8
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    • pp.439-444
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    • 2012
  • To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

Fabrication of a novel micromachined measurement device for temperature distribution measurement in the microchannel (마이크로채널 내의 온도 분포 측정을 위한 미소 측정 구조물의 제작)

  • Park, Ho-Joon;Lim, Geun-Bae;Son, Sang-Young;Song, In-Seob;Pak, James-Jung-Ho
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1921-1923
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    • 2001
  • In this work, an array of resistance temperature detector(RTD) was fabricated inside the microchannel in order to investigate in-situ flow characteristics. A rectangular straight microchannel, integrated with RTD's for temperature sensing and a heat source for generating the temperature gradient along the channel. were fabricated with the dimension of $200{\mu}m(W){\times}{\mu}m(D){\times}$48mm(L), while RTD measured precise temperatures at the inside-channel wall. 4" $525{\pm}25{\mu}m$ thick P-type <100> Si wafer was used as a substrate. For the fabrication of RTDs. 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, glass wafer was bonded with Si wafer by anodic bonding, therefore RTD was located inside the microchannel. The temperature distribution inside the fabricated microchannel was obtained from 4 point probe measurements and Dl water is used as a working fluid. Temperature distribution inside the microchannel was measured as a function of mass flow rate and heat flux. As a result, precise temperatures inside the microchannel could be obtained. In conclusion, this novel temperature distribution measurement system will be very useful to the accurate analysis of the flow characteristics in the microchannel.

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Analysis of Biocompatible TiO2 Oxide Multilayer by the XPS Depth Profiling

  • Jang, Jae-Myung;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.156-156
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    • 2017
  • In this work, analysis of biocompatible TiO2 oxide multilayer by the XPS depth profiling was researched. the manufacture of the TiO2 barrier-type multilayer was accurately performed in a mixed electrolyte containing HAp, Pd, and Ag nanoparticles. The temperature of the solution was kept at approximatively $32^{\circ}C$ and was regularly rotated by a magnetic stirring rod in order to increase the ionic diffusion rate. The manufactured specimens were carefully analyzed by XPS depth profile to investigate the result of chemical bonding behaviors. From the analysis of chemical states of the TiO2 oxide multilayer using XPS, the peaks are showed with the typical signal of Ti oxide at 459.1 eV and 464.8 eV, due to Ti 2p(3/2) and Ti 2p(1/2), respectively. The Pd-3d peak was split into Pd-3d(5/2) and Pd-3d(3/2)peaks, and shows two bands at 334.7 and 339.9 eV for Pd-3d3 and Pd-3d5, respectively. Also, the peaks of Ag-3d have been investigated. The chemical states consisted of the O-1s, P-2p, and Ti-2p were identified in the forms of PO42- and PO43-. Based on the results of the chemical states, the chemical elements into the TiO2 oxide multilayer were also inferred to be penetrated from the electrolyte during anodic process.The structure characterization of the modified surface were performed by using FE-SEM, and from the result of biological evaluation in simulated body fluid(SBF), the biocompatibility of TiO2 oxide multilayer was effective for bioactive property.

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Photoelectrochemical Behaviour of Oxide Films on Ti-Ga2O3 Alloy (Ti-Ga 합금 위에 형성된 산화티타늄 피막의 광 전기분해 특성에 관한 연구)

  • Park, Seong-Yong;Cho, Byung-Won;Yun, Kyung-Suk;Lee, Eung-Cho
    • Transactions of the Korean hydrogen and new energy society
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    • v.3 no.2
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    • pp.25-33
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    • 1992
  • With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

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Fabrication of the Microchannel Integrated with the Inner Sensors for Accurate Measuring Fluid Temperature (유체의 정확한 온도 측정을 위하여 내부 센서를 집적한 마이크로채널 제작)

  • Park, Ho-Jun;Im, Geun-Bae;Son, Sang-Yeong;Song, In-Seop;Park, Jeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.449-454
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    • 2002
  • A rectangular straight microchannel, integrated with the resistance temperature detectors(RTDs) for temperature sensing and a micro-heater for generating the Temperature gradient along the channel, was fabricated. Its dimension is 57${\mu}{\textrm}{m}$(H)$\times$200${\mu}{\textrm}{m}$(W)$\times$48,050${\mu}{\textrm}{m}$(L), and RTDs were placed at the inner-channel wall. Si wafer was used as a substrate. For the fabrication of RTDs, 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, the glass wafer was bonded with Si wafer by anodic bonding, so that the RTDs are located inside the microchannel. Temperature coefficient of resistance(TCR) values of the fabricated Pt-RTDs were 2800~2950ppm$^{\circ}C$ and the variation of TCR value In the range of O~10$0^{\circ}C$ was less than 0.3%. Therefore, it was proved that the fabricated Pt-RTDs without annealing were excellent as temperature sensors. The temperature distribution in the microchannel was investigated as a function of mass flow rate and heating power. The temperature increase rate diminished with decreasing the applied power and increasing the mass flow rate. It was confirmed from the comparison with the simulation results that the temperature measured inside the microchannel is more accurate than measuring the temperature measured at the outer wall. The proposed temperature sensing method and microchannel are expected to be useful in microfluidics researches.

A High Yield Rate MEMS Gyroscope with a Packaged SiOG Process (SiOG 공정을 이용한 고 신뢰성 MEMS 자이로스코프)

  • Lee Moon Chul;Kang Seok Jin;Jung Kyu Dong;Choa Sung-Hoon;Cho Yang Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.187-196
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    • 2005
  • MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and the external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with SOI (Silicon-On-Insulator) wafer and packaged using the anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

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