• 한국의류산업학회지
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• 제15권6호
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• pp.985-992
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• 2013

Polytrimethylene terephthalate(PTT) offers several advantageous properties such as good tensile strength, uniformity, stiffness, toughness, UV stability, resilience, stain resistance, outstanding elastic recovery, and dyeability. The effects of annealing temperature on physical properties and the structure of PTT filaments and yarn were investigated by measuring wide-angle X-ray diffraction (WAXD), density, optical birefringence, dynamic visco elasticity, and tensile testing. The intensity of maximum tan ${\delta}$ decreased and the temperature of maximum tan ${\delta}$ shifted to a higher temperature as the annealing temperature of filaments increased; however, it shifted to a lower temperature when the annealing temperature exceeded $130^{\circ}C$. In addition, crystallinity, density and D-spacing of (010) crystal face increased as the annealing temperature increased. Optical birefringence and specific stress were almost constant up to $100^{\circ}C$ and then decreased above $130^{\circ}C$. The shrinkage of PTT filament is 0 in boiling water when annealed above $130^{\circ}C$; consequently, the use of annealed fiber above $130^{\circ}C$ can remove thermal instability when dyeing PTT fiber. In the case of yarns, the thermal stability and physical properties of yarns showed the best effect when the ply number is less than 5, twist number is less than 400tpm, and the annealing time is 20minutes.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 추계학술대회
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• pp.722-725
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• 2013

본 연구에서는 열처리를 하지 않은 소자와 열처리 소자의 기본 특성을 비교, 분석하고 온도에 따른 특성 변화를 확인하였다. 사용된 소자는 상부전극이 Pt/Ti(150nm), 하부전극은 Pt(150nm), 산화층은 $HfO_2$(70nm)이고, 열처리 온도는 $500^{\circ}C$, $850^{\circ}C$ 이다. 측정 소자 성능은 Set/Reset 전압, sensing window(저항상태 차이)다. 측정결과 세 종류의 소자의 기본 특성은 열처리별 온도가 높을수록 Set/Reset전압과 sensing window가 증가하였다. 온도에 따른 기본특성 분석 실험 결과 온도가 증가함에 따라 Set/Reset전압과 sensing window가 감소하였다. Set/Reset 전압의 온도에 따른 변화율은 $850^{\circ}C$ 열처리한 소자가 제일 작았고, sensing window의 변화율은 $500^{\circ}C$ 열처리 소자에서 가장 작은 변화율을 보였다. Set/Reset 전압의 변화율 과 sensing window를 고려했을 때 $500^{\circ}C$ 열처리 소자가 좋은 메모리 특성을 보였다.

• Applied Biological Chemistry
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• 제34권2호
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• pp.187-189
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• 1991

Gelatinization temperatures of upland and lowland waxy brown rice starches annealed at $25^{\circ}C$ and $60^{\circ}C$ for 24hr were investigated with differential scanning calorimetry No annealing effect was observed at low temperature. The upland rice starch showed narrower range of gelatinization temperature upon annealing treatment at $60\circ}C$ compared with the lowland rice starch. The enthalpy of gelatinization was not changed in case of the upland rice starch but was increased in case of the lowland one upon annealing.

• 한국정밀공학회지
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• 제18권12호
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• pp.167-176
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• 2001

The effects of heat treatments and testing temperatures on the mechanical properties of Invar materials were investigated through experiments, which call influence the formability in metal forming fields. Annealing temperatures were changed from $900^{\circ}C$ to $1200^{\circ}C$ with an increment of $100^{\circ}C$ under two different furnace atmosphere(vacuum and H$_2$gas). Microstructure and hardness tests were performed for annealed specimens at room temperature(RT) and tensile tests were also performed by changing annealing temperatures as well as testing temperatures from RT to $300^{\circ}C$. The grain size of annealed materials increased with increasing annealing temperature, while micro-hardness distributions showed almost same hardness values regardless of annealing temperatures. Strength ratio (tensile/yield strength), which influences the forming characteristics of sheet metal, remained almost constant for various experimental conditions in case of unannealed specimens. However, it showed increasing tendency with increasing both annealing and testing temperatures, particularly at the testing temperature higher than $200^{\circ}C$. Therefore it can be concluded that press formability of fully-annealed Invar material can be improved by warm forming technique.

• 한국재료학회지
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• 제13권5호
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.864-868
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• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• 한국자기학회지
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• 제16권1호
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• pp.98-101
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• 2006

결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

• 한국세라믹학회지
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• 제52권4호
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• pp.279-283
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• 2015

Ni (100 nm thick) was deposited onto synthesized diamonds to fabricate etched diamonds. Next, those diamonds were annealed at varying temperatures ($400{\sim}1200^{\circ}C$) for 30 minutes and then immersed in 30 wt% $HNO_3$ to remove the Ni layers. The etched properties of the diamonds were examined with FE-SEM, micro-Raman, and VSM. The FE-SEM results showed that the Ni agglomerated at a low annealing temperature (${\sim}400^{\circ}C$), and self-aligned hemisphere dots formed at an annealing temperature of $800^{\circ}C$. Those dots became smaller with a bimodal distribution as the annealing temperature increased. After stripping the Ni layers, etch pits and trigons formed with annealing temperatures above $400^{\circ}C$ on the surface of the diamonds. However, surface graphite layers existed above $1000^{\circ}C$. The B-H loop results showed that the coercivity of the samples increased to 320 Oe (from 37 Oe) when the annealing temperature increased to $600^{\circ}C$ and then, decreased to 150 Oe with elevated annealing temperatures. This result indicates that the coercivity was affected by magnetic domain pinning at temperatures below $600^{\circ}C$ and single domain behavior at elevated temperatures above $800^{\circ}C$ consistent with the microstructure results. Thus, the results of this study show that the surface of diamonds can be etched.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1349-1351
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.