• Title/Summary/Keyword: Anisotropy profile

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Prediction of Etch Profile Uniformity Using Wavelet and Neural Network

  • Park, Won-Sun;Lim, Myo-Taeg;Kim, Byungwhan
    • International Journal of Control, Automation, and Systems
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    • v.2 no.2
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    • pp.256-262
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    • 2004
  • Conventionally, profile non-uniformity has been characterized by relying on approximated profile with angle or anisotropy. In this study, a new non-uniformity model for etch profile is presented by applying a discrete wavelet to the image obtained from a scanning electron microscopy (SEM). Prediction models for wavelet-transformed data are then constructed using a back-propagation neural network. The proposed method was applied to the data collected from the etching of tungsten material. Additionally, 7 experiments were conducted to obtain test data. Model performance was evaluated in terms of the average prediction accuracy (APA) and the best prediction accuracy (BPA). To take into account randomness in initial weights, two hundred models were generated for a given set of training factors. Behaviors of the APA and BPA were investigated as a function of training factors, including training tolerance, hidden neuron, initial weight distribution, and two slopes for bipolar sig-moid and linear function. For all variations in training factors, the APA was not consistent with the BPA. The prediction accuracy was optimized using three approaches, the best model based approach, the average model based approach and the combined model based approach. Despite the largest APA of the first approach, its BPA was smallest compared to the other two approaches.

A Study on the Rotation of Uniaxial Anisotropy Field of NiFe Thin Film by Magnetic Annealing (자기장 내 열처리에 의한 퍼멀로이 박막의 일축 이방성 자기장의 회전에 관한 연구)

  • 송용진;김기출;이충선
    • Journal of the Korean Magnetics Society
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    • v.11 no.4
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    • pp.163-167
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    • 2001
  • The rotation of uniaxial anisotropy field of 700 ${\AA}$ thick sputtered NiFe thin film due to magnetic annealing was investigated. NiFe film was annealed in a magnetic field which is perpendicular to the initial induced uniaxial anisotropy field. The NiFe film becomes nearly isotropic after 1 hour annealing at 160 $^{\circ}C$. With increase of annealing temperature over 160 $^{\circ}C$, the film gets uniaxial anisotropy field again. An abrupt increase of H$\sub$c/ was observed with annealing temperature over 400 $^{\circ}C$. The X-ray diffraction analysis and Auger electron spectroscopy with Ar ion etching showed extensive grain growth in NiFe film with (111) texturing and interdiffusion with adjacent Au electrode layer by 400 $^{\circ}C$ magnetic annealing.

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ICP ETCHING OF TUNGSTEN FOR X-RAY MASKS

  • Jeong, C.;Song, K.;Park, C.;Jeon, Y.;Lee, D.;Ahn, J.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.869-875
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    • 1996
  • In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

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Analysis of Hysteretic Giant Magnetoimpedance Using Stoner-Wohlfarth Model

  • Jang, K.J.;Kim, C.G.;Kim, D.Y.;Kim, C.O.
    • Journal of Magnetics
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    • v.5 no.3
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    • pp.85-89
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    • 2000
  • The hysteretic characteristics of giant magnetoimpedance (GMI) profiles have been measured in Co-based amorphous ribbon with various anisotropy angles $\theta_k$, and they have been analyzed by using the Stoner-Wohl-farth model. Two-peaks behavior with a dip near zero field is revealed in the measured GMI profile at 10 MHz irrespective of $\theta_k$. The negligible hysteresis of the field fur the dip is close to the calculation assuming the magnetization jump from a metastable to stable state. However, the hysteretic asymmetry far the angle range of $20^\circ\leq\theta_k < 60^\circ$ is well described by the divergence in the calculation without the magnetization jump. The asymmetry for $\theta_k\geq60^\circ$ may be due to the divergence, but the shapes of measured profiles are quite different from the calculations with single peak near zero field, indicating that Stoner-Wohlfarth model can be well used to describe GMI characteristics for the anisotropy angle range of $20^\circ\leq\theta_k < 60^\circ$at the frequency of 10 MHz in Co-based amorphous ribbons.

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A Study on the Silicon Etching Characteristics in ECR using ${SF_6}/{Cl_2}$ Gas Mixtures (${SF_6}/{Cl_2}$ 혼합비에 따른 실리콘 식각 특성 고찰)

  • 이상균;강승열;권광호;이진호;조경익;이형종
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.114-119
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    • 2000
  • Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

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Evaluation of Rock Discontinuity Roughness Anisotropy based on Digital 3D Point Cloud Data (디지털 3차원 점군데이터 기반 암반 불연속면 거칠기 이방성 평가)

  • Taehyeon Kim;Kwang Yeom Kim
    • Tunnel and Underground Space
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    • v.33 no.6
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    • pp.495-507
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    • 2023
  • The roughness of discontinuity significantly influences the mechanical characteristics of rock masses and extensively affects thermal and hydraulic behaviors. In this study, we utilized photogrammetry to generate 3D point cloud data for discontinuity and applied this data to characterize the roughness of discontinuity. The discontinuity profiles, reconstructed from the 3D point cloud data, were compared with those manually measured using a profile gauge. This comparison served to validate the accuracy and reliability of the acquired point cloud data in replicating the actual configurations of rock surfaces. Subsequent to this validation, influence of the number of profiles for representative JRC assessment was further investigated followed by suggestion of roughness anisotropy evaluation method with application of it to actual rock discontinuity surfaces.

A study on the silicon shallow trench etch process for STI using inductively coupled $Cl_2$ and TEX>$HBr/Cl_2$ plasmas (유도결합 $Cl_2$$HBr/Cl_2$ 플라즈마를 이용한 STI용 실리콘 Shallow trench 식각공정에 관한 연구)

  • 이주훈;이영준;김현수;이주욱;이정용;염근영
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.267-274
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    • 1997
  • Silicon shallow trenches applied to the STI (Shallow Trench Isolation) of integrated circuits were etched using inductively coupled $Cl_2$ and HBr/$Cl_2$ plasmas and the effects of process parameters on the etch profiles of silicon trenches and the physical damages on the trench sidewall and bottom were investigated. The increase of inductive power and bias voltage in $Cl_2$ and HBr/$Cl_2$ plasmas increased polysilicon etch rates in general, but reduced the etch selectivities over nitride. In case of $Cl_2$ plasma, low inductive power and high bias voltage showed an anisotropic trench etch profile, and also the addition of oxygen or nitrogen to chlorine increased the etch anisotropy. The use of pure HBr showed a positively angled etch profile and the addition of $Cl_2$ to HBr improved the etch profile more anisotropically. HRTEM study showed physical defects formed on the silicon trench surfaces etched in $Cl_2/N_2$ or HBr/ $Cl_2$ plasmas.

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P-wave Velocity Anisotropy in the Upper Crust of the Southern Korean Peninsula Using Seismic Signals from Large Explosions (대규모 발파자료를 이용한 한반도 남부 상부지각의 종파 속도 이방성)

  • Hong, Myung-Ho;Kim, Ki-Young
    • Geophysics and Geophysical Exploration
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    • v.12 no.3
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    • pp.225-232
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    • 2009
  • As part of seismic experiments investigating crustal velocity structures of the Korean peninsula, permanent (fixed) seismographs of the Korea Meteorological Administration (KMA) network recorded seismic signals from four and eight large explosions in Korean Crustal Research Team (KCRT) profiles shot in 2004 and 2008, respectively. Among the seismograms recorded by 43 velocity sensors and 103 accelerometers at KMA stations distributed throughout the southern Korean Peninsula, 156 records with epicentral distances less than 120 km and high signal-to-noise ratios were analyzed to determine velocity anisotropy of the Pg phase. Relative elevation corrections of -101.6 to 105.3 ms were made using velocity information derived from the 2004 KCRT profile data and differences in elevation between the permanent KMA stations and the temporary stations in the KCRT profiles at the same source-receiver offsets. To remove site effects, receiver-station corrections of -89.6 to 192.2 ms were additionally made to the KMA station data by subtracting the average differences in traveltimes between KMA stations and portable stations at the same offsets for all available shots with different azimuths. With the exception of anomalously fast velocities along trends of the Chugaryeong fault zone and the Okchon fold belt and anomalously slow velocities in the regions of high terrestrial heat near Yeongduk and Ulsan, the analysis of crustal velocity anisotropy using the Pg phase indicates overall isotropy in the southern half of the Korean peninsula.

Dendrite Tip Shapes of Pivalic Acid-Ethanol and Succinonitrile-Salol Systems (Pivalic Acid-Ethanol 및 Succinonitrile-Salol 계에서의 수지상정 선단의 형상)

  • Suk, Myung-Jin;Park, Young-Min;Oh, Sung-Tag;Chang, Si-Young
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.570-576
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    • 2011
  • The shape of a dendrite tip has long been approximated by a paraboloid of revolution, but many attempts have been made as well to more accurately match the dendrite tip profile using other mathematical functions: power function, 4th order polynomial, and hyperbolic function. In the present work, dendrite tip shapes were matched by parabolic function. The differences between the dendrite tip shapes of pivalic acid(PVA)-ethanol(Eth) and succinonitrile(SCN)-salol systems, characterized by anisotropic and isotropic solid-liquid interfacial properties, respectively, were quantitatively treated using shape parameters. The PVA-Eth system showed a slightly higher Z/R value than the SCN-salol system, their Z/R values lying in the range 2-4. (Z is the distance from the tip beyond which the parabolic fit starts to deviate from the profile, and R the tip radius.) ${\lambda}_P$ is the distance from the tip beyond which side branching starts to appear, and is larger in the PVA-Eth system than the SCNsalol system. ${\lambda}_P$ is different for both sides of the 2-dimensional dendrite profile. The difference of ${\lambda}_P$ between both sides of the dendrite is larger for PVA-Eth system than for SCN-salol, implying that the dendrite of PVA-Eth is less symmetric than that of SCN-salol.

Anisotropic etching of polysilicon in a $Cl_2/CH_3Br/O_2$ Plasma

  • Yi, Whi-Kun
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.24-29
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    • 1999
  • The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

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