• Journal of Magnetics
• /
• v.20 no.1
• /
• pp.8-10
• /
• 2015

The magnetic anisotropy field plays an important role in spin-orbit-torque-induced magnetization dynamics with electric current injection. Here, we propose a magnetometric technique to measure the magnetic anisotropy field in nanostructured ferromagnetic thin films. This technique utilizes a magneto-optical Kerr effect microscope equipped with two-axis electromagnets. By measuring the out-of-plane hysteresis loops and then analyzing their saturated magnetization with respect to the in-plane magnetic field, the magnetic anisotropy field is uniquely quantified within the context of the Stoner-Wohlfarth theory. The present technique can be applied to small nanostructures, enabling in-situ determination of the magnetic anisotropy field of nanodevices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.6
• /
• pp.486-492
• /
• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• The Journal of Engineering Research
• /
• v.7 no.1
• /
• pp.99-103
• /
• 2005

The ferrimagnetic resonance technique, with the inclusion of shaper anisotropy effects, was used to obtain information about the early stages in the precipitation of magnesium ferrite from iron-doped magnesia. The very small magnesioferrite particles were produced by precipitation method from solid solution of iron ion in single crystal magnesia. The temperature dependence of the resonance anisotropy field for a coherent assembly of hyperfine magnesium ferrite precipitates was investigated in the range 100~400K. The results are interpreted in terms of the shape anisotropy of the precipitates.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1212-1217
• /
• 2018

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and -8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.3
• /
• pp.224-230
• /
• 2003

The voltage-dependent transmittance curve of a homogeneously aligned liquid crystal (LC) cell driven by fringe-electric field(named FFS mode) was studied, while changing dielectric anisotropy of a LC. The results show that for a LC with positive dielectric anisotropy while positioning at initial position. Therefore, we conclude that the dynamic stability is strongly dependent on the types of the LCs and voltage-dependent dynamics of the LC with negative dielectric anisotropy is staler than that of the LC with positive dielectric anisotropy in the FFS mode.

• Journal of Magnetics
• /
• v.2 no.1
• /
• pp.22-24
• /
• 1997

FeN thin films were deposited by RF-reactive diode sputtering to investigate magnetic characteristics variation due to substrate tilt during the film deposition, and their magnetic properties were measured by VSM, SEM and AFM. When the substrate tilt pivot edges were parallel to the applied field, the magnetic anisotropy was increased When the substrate tilt pivot edges were perpendicular to the applied field, the easy magnetization axis became the hard magnetization axis, and the hard axis became the easy axis as the tilt angles were increased. The reason is believed to be due to the fact that the tilt induced shape magnetic anisotropy became larger than the field induced magnetic anisotropy by DC magnetic field as the crystal grains are enlongated along the substrate tilt pivot edges due to "oblique incidence anisotropy" commonly found in eveporated thin films.

• Journal of Magnetics
• /
• v.3 no.4
• /
• pp.123-126
• /
• 1998

The magneto-impedance (MI) has been measured in the annealed Co66Fe4Ni1B14Si15 amorphous ribbon for the evaluation of anisotropy field. MI at the frequency of 10 MHz is related to the transverse permeability from rotational magnetization depending on the local anisotropy field. MI varies sensitively with the annealing temperature, reflecting the change of anisotropy field distribution. The local anisotropy fields evaluated from MI Profiles are discussed in terms of the magnetic softness and microstructural change by the annealing.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.133-136
• /
• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.518-519
• /
• 2005

We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

• Journal of the Korean Magnetics Society
• /
• v.12 no.2
• /
• pp.46-50
• /
• 2002

Soft magnetic Mumetal thin film was fabricated under magnetic field at various substrate temperatures. High vacuum annealing was carried out at 200$\^{C}$ during 1 hr. The in-plane anisotropy of Mumetal thin film was determined from hysteresis loops measured by VSM when the sample axis varied from the field direction from 0°to 180°. As the substrate temperature increases, the coercivity in easy direction decreases, but uniaxial anisotropy deviates from the field direction. After vacuum annealing at 200$\^{C}$ for 1 hr, the uniaxial anisotropy is improved irrespective of substrate temperature. When the substrate temperature was 50$\^{C}$, the anisotropy field is 4.3 Oe. As the substrate temperature increases anisotropy field decreases. Uniaxial anisotropy of Mumetal thin film was formed best at 50$\^{C}$ before and after annealing.