• International Journal of Fluid Machinery and Systems
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• v.3 no.3
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• pp.253-259
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• 2010

Leakage characteristics of two labyrinth seals with different configurations (straight vs stepped) were investigated. Leakage flows were predicted by computational fluid dynamics (CFD) for the two configurations and compared with test data. A semi-analytical leakage prediction tool was also tried to predict the leakage. It was confirmed that the CFD gives quite good agreements with test data. The analytical tool also yielded similar leakage behaviors with test results, but the overall agreement with test data was not as good as that of the CFD. The effect of flow direction in the stepped seal on leakage flow was examined. The dependence of leakage performance, in terms of flow function, on the seal clearance size was investigated. Flow function decreased with decreasing clearance in the straight seal, while the trend was reversed in the stepped seal.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.226-231
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• 1999

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.3
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• pp.141-145
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• 2006

The line current problem(2-dimensional space : point source) is not easy to analyze the magnetic field using the standard finite element method(FEM), such as overhead trolley line or transmission line. To supplement such a defect this paper is proposed the coupling scheme of analytical solution and FEM. In analysis of the magnetic field using the standard FEM. If the current region is a relatively small compared to the whole region. Therefore the current region must be finely divided using a large number of elements. And the large number of elements increase the number of unknown variables and the use of computer memories. In this paper, an analytical solution is suggested to supplement this weak points. When source is line current and the part of interest is far from line current, the analytical solution can be coupling with FEM at the boundary. Analytical solution can be described by the multiplication of two functions. One is power function of radius, the other is a trigonometric function of angle in the cylindrical coordinate system. There are integral constants of two types which can be established by fourier series expansion. Also fourier series is represented as the factor to apply the continuity of the magnetic vector potential and magnetic field intensity with tangential component at the boundary. To verify the proposed algorithm, we chose simplified model existing magnetic material in FE region. The results are compared with standard FE solution. And it is good agreed by increasing harmonic order.

• Computers and Concrete
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• v.31 no.4
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• pp.349-358
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• 2023

This paper describes an in-depth analysis on flexural strength of a girder-deck system experiencing a strand debonding damage with various strengthening systems, based on finite element software ABAQUS. A detailed finite element analysis (FEA) model was developed and verified against the relevant experimental data performed by other researchers. The proposed analytical model showed a good agreement with experimental data. Based on the verified FE model, over a hundred girder-deck systems were investigated with the consideration of following variables: 1) debonding level, 2) span-to-depth ratio (L/d), 3) strengthening type, 4) strengthening material thickness. Based on the data above, a new detailed analytical model was developed and proposed for estimating residual flexural strength of the strand-debonding damaged girder-deck system with strengthening systems. It was demonstrated that both finite element model and analysis model could be used to predict flexural behaviors for debonding damaged prestressed girder-deck systems. Since the strands are debonding from surrounding concrete over a certain zone over the length of the beam, the increase of strain in strands can be linked with a ratio ψ, which is L_p/c. The analytical model was proposed and developed regarding the ratio ψ. By conducting procedure of calculating ψ, the ψ value varies from 9.3 to 70.1. Multiple nonlinear regression analysis was performed in Software IBM SPSS Statistics 27.0.1 to derive equation of ψ. ψ equation was curved to be an exponential function, and the independent variable (X) is a linear function in terms of three variables of debonding level (λ), span length (L), and amount of strengthening material (A_s). The coefficient of determinate (R²) for curve fitting in nonlinear regression analysis is 0.8768. The developed analytical model was compared to the ultimate capacities computed by FEA model.

• Structural Engineering and Mechanics
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• v.59 no.1
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• pp.1-14
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• 2016

In this paper, an alternative analytical method is presented to evaluate the nonlinear vibration behavior of single and double tapered cantilever beams. The admissible lateral displacement function satisfying the geometric boundary conditions of a single or double tapered cantilever beam is derived by using Rayleigh-Ritz method. Based on the Lagrange method and the Newton Harmonic Balance (NHB) method, analytical approximate solutions in closed and explicit form are obtained. These approximate solutions show excellent agreement with those of numeric method for small as well as large amplitude. Moreover, due to brevity of expressions, the present analytical approximate solutions are convenient to investigate effects of various parameters on the large amplitude vibration response of tapered beams.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.6
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• pp.1409-1413
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Communications of the Korean Mathematical Society
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• v.38 no.2
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• pp.389-400
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• 2023

In this paper, some estimations will be given for the analytic functions belonging to the class 𝓡(α). In these estimations, an upper bound and a lower bound will be determined for the first coefficient of the expansion of the analytic function h(z) and the modulus of the angular derivative of the function ${\frac{zh^{\prime}(z)}{h(z)}}$, respectively. Also, the relationship between the coefficients of the analytical function h(z) and the derivative mentioned above will be shown.

• Journal of Korean Society on Water Environment
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• v.24 no.3
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• pp.345-353
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• 2008

In order to design storage-based non-point source management facilities, the aspect of statistical features of the entire precipitation time series should be considered since non-point source pollutions are delivered by continuous rainfall runoffs. The 3-parameter mixed exponential probability density function instead of traditional single-parameter exponential probability density function is applied to represent the probabilistic features of long-term precipitation time series and model urban stormwater runoff. Finally, probability density functions of water quality control basin overflow are derived under two extreme intial conditions. The 31-year continuous precipitation time series recorded in Busan are analyzed to show that the 3-parameter mixed exponential probability density function gives better resolution.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.