• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1229-1232
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• 2003

In this paper, The High-speed Low-power Analog-to-Digital Convener Archecture is proposed using the parallel S/H for High-speed operation. This technique can significantly reduce the sampling frequency per S/H channel. The Analog-to-Digital Converter is designed using 0.35${\mu}{\textrm}{m}$ CMOS technology. The simulation result show that the proposed Analog-to-Digital Converter can be operated at 40Ms/s with 8-bit resolution and INL/DNL errors are +0.4LSB~-0.6LSB / +0.9LSB~-1.4LSB , respectively.

• Bulletin of the Korean Space Science Society
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• 2004.10b
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• pp.337-340
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• 2004

Upper stage telemetry system of KSLV- I (Korea Space Launch Vehicle I) is composed of MDU (Master Data Unit), RDU (Remote Data Unit), SRU (Shock Recorder Unit) and Transmitter. RDU is the front-end telemetry data acquisition unit which gathers analog/discrete signals from various sensors and other units, and transmits the processed data to MDU via MIL-STD-I553B data bus. In order to acquire useful data from analog signal, signal conditioning circuits, such as anti-aliasing or amplifying, should be implemented. For this purpose, SCM (Signal Conditioning Module) had been developed. This paper describes hardware structure of SCM and analog signal conditioning circuits for various sensors. Also, sampling time scheme for different sampling rates were designed and tested.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.301-304
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• 2001

The analog multiplier is very useful building block in many circuits such as filter, frequency-shifter, and modulators. In recent year, The main design issue of circuit designer is low-voltage/low-power system design, because of all systems are recommended very integrated system and portable system In this paper, the proposed the four-quadrant analog multiplier is using the bulk-driven techniques. The bulk-driven technique is very useful technique in low-voltage system, compare with gate-driven technique. therefore the proposed analog multiplier is operated in 1V supply voltage. And the proposed analog multiplier is low power dissipation compare with the others. therefor the proposed analog multiplier is convenient in low-voltage/low-power in system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.12-17
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• 2011

In this work, the analog performances of n-MOSFET fabricated on strained-Si/relaxed Si buffer layer with Ge mole fractions and thermal annealing temperatures after device fabrication have been characterized in Depth. The effective electron mobility was increased with the increase of Ge mole fraction for all annealing temperatures. However the effective electron mobility was decreased at the Ge mole fraction of 32%. The analog performances were enhanced with the increase of Ge mole fraction at the room temperature but they were degraded at the Ge mole fraction of 32%. Since the degradation of the effective electron mobility of strained-Si layer is more significant than one of conventional Si layer at elevated temperature, the degradation of analog performances of SGOI devices were increased than those of SOI devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.35-40
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• 2005

A digitally controlled phase-locked loop (DCPLL) is described. The DCPLL has basically the same structure as a conventional analog PLL except for a tracking analog-to-digital converter (ADC). The tracking ADC generates the control signal for voltage controlled oscillator. Since the DCPLL employs neither digitally controlled oscillator nor time-to-digital converter-the key building blocks of digital PLL (DPLL), there is no need for the 03de-off between jitter, power consumption and silicon area. The DCPLL was implemented in a $0.18\mu$m CMOS process and the active area is 1mm $\times$0.35 mm The DCPLL consumes S9mW during the normal opuation and $984\{mu}W$ during the power-down mode from a 1.8V supply. The DCPLL shows 16.8ps ms jitter.

• Journal of IKEEE
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• v.24 no.4
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• pp.1028-1033
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• 2020

The existing in-band interference reduction method recommends the physical separation distance between wireless devices and interference signals, and the interference can be suppressed through the separation distance. If the in-band interference signals can be reduced in a wireless device, a margin can be given to the physical separation distance. Since there is an effect of extending the receiver dynamic range of receivers, it is highly useful for interference reduction and improvement method. In this paper, the structure of an in-band analog IRM(Interference Reduction Module) is proposed and the design and implementation of the proposed analog IRM are described. To design an analog IRM, the interference reduction performance according to the delay mismatch, phase error and the number of delay lines that affect the performance of the analog IRM was simulated. The proposed analog IRM composed of 16 delay lines was implemented and the implemented IRM has the interference reduction performance of about 10dB for a 5G(NR-FR1-TM-1.1) signal having a 40MHz bandwidth at a center frequency of 3.32GHz. The analog IRM proposed in this paper can be used as an in-band interference canceller.

• ETRI Journal
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• v.41 no.4
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• pp.536-548
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• 2019

In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at ${\lambda}/64$, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz-3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a $4{\times}4$ BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four-conventional monopole antenna.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.11
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• pp.10-17
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• 1999

In this paper, CMOS IADC(Current-mode Analog-to-Digital Converter) which consists of only CMOS transistors is proposed. Each stages is made up 1.5-bit bit cells composed of CSH(Current-mode Sample-and-Hold) and CCMP(Current Comparator). The differential CSH which designed to eliminate CFT(Clock Feedthrough), to meet at least 9-bit resolution, is placed at the front-end of each bit cells, and each stages of bit cell ADSC (Analog-to-Digital Subconverter) is made up two latch CCMPs. With the HYUNDAI TEX>$0.65\mu\textrm{m}$ CMOS parameter, the ACAD simulation results show that the proposed IADC can be operated with 47 dB of SINAD(Signal to Noise- Plus-Distortion), 50dB(8-bit) of SNR(Signal-to-Noise) and 37.7 mW of power consumption for input signal of 100 KHz at 20 Ms/s.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.5
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• pp.485-490
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• 2004

This paper presents a new interpolation algorithm for measuring high resolution position information which is prepared to a nino servo control motor using analog quadrature encoder. In the past, there are large capacity of memory(ROM or RAM) and two high price and resolution A/D(Analog-to-Digital Converter) for sensing two quadrature signals from a analog sinusoidal encoder interpolation. But high resolution of position from sinusoidal encoder can be obtained by using only small capacity of memory, one A/D converter and comparator. Experimental results show that the proposed algorithm is useful for measuring high resolution position.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.23-28
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• 2010

In this paper, comparative analysis of digital and analog performances of strained-silicon PMOSFETs with different carrier direction were performed. ID.SAT vs. ID.OFF and output resistance, Rout performances of devices with <100> carrier direction were better than those of <110> direction due to the greater carrier mobility of <100> channel direction. However, on the contrary, NBTI reliability and device matching characteristics of device with <100> carrier direction were worse than those with <110> carrier direction. Therefore, simultaneous consideration of analog and reliability characteristics as well as DC device performance is highly necessary when developing mobility enhancement technology using the different carrier direction for nano-scale CMOSFETs.