• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.339-341
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• 2007

Soft ferromagnetic materials are very useful for many sensors using magnetic materials with high permeability, low coercivity and low hysteresis loss. Among them, FeCoSiBNi amorphous magnetic films show us a good impedance change(about 3.05%/Oe, at 12MHz) by the exterior magnetic field in this experiment. These are produced by rapid solidification from the melt and the material is ejected in a jet from a nozzle and quenched in a stream of liquid. After that, we make them a shape of wire with different sizes of width. Thus, we can find that the impedance change (122.16%, at 12MHz) is occurred and the fabricated magnetic wire has the characteristics of good sensor element.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.401-402
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• 2005

The important parts of material science in the film preparation fields and sol-gel technology are presented. For the present work, a series of amorphous films was prepared in air by sol-gel method without using some alkoxide stabilizer, which reduces the reactivity of the metal alkoxides. The choice of precursors can affect the chemical-reaction kinetics, microstructures and properties of the product. In this report author compared the crystallization behavior of oxide functional films derived from the same precursors, stressing the influence of experiment conditions and where it was possible to obtain the uniform amorphous or crystalline dielectric films. A short analysis of sol-gel technology and thin film methods about development of dielectric materials has been given.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.759-772
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• 2009

Amorphous alloys, in addition to being promising materials for a variety of practical applications, provide an excellent test bed for evaluating our understanding of the underlying physics on deformation in amorphous solids. Like many amorphous materials, amorphous alloys can exhibit either homogeneous or inhomogeneous deformation depending on the stress level. The mode of deformation has a strong influence on whether the material behavior is classified as ductile or brittle. It was observed that the characteristics of these deformations are largely dependent on the atomic-scale structures of the alloys and determine the amount of the plastic deformation prior to failure. In this study, the structural features that control the homogeneous deformation of amorphous alloys are outlined on the basis on experiments and molecular dynamics simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.418-421
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• 2003

Today, much terminologies such as noise spectrum, Sharpness, contrast, MTF had been defined for Image quality revaluation of radiation Image. Since development of Xeroradiography In the 1970s, Digital radiation detector that use amorphous selenium was developed. The aim of this research is to analyze physical phenomenon of digital radiation detector that use amorphous selenium. Result of Monte Carlo simulations on amorphous selenium based on physical properties(creation of electron-hole pairs) by induced x-ray are described. From the simulation, intrinsic point spread function(PSF) was found and used to observe modulation transfer function(MTF). We investigated how PSF and MTF changed with various x-ray energy. This result can be used to design digital x-ray detector based on a-Se.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Journal of Magnetics
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• v.7 no.4
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• pp.143-146
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• 2002

Mechanical milling technique is considered to be a useful way of processing the fine Nd-Fe-B-type powder with high coercivity. In the present study, phase evolution of the $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ (x=0-0.6) alloys during the high energy mechanical milling and annealing was investigated. The effect of Co-substitution on the crystallization of the mechanically milled $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ amorphous material was examined. The Nd-Fe-B-type alloys can be amorphized completely by a high-energy mechanical milling. On annealing of the amorphous material, fine $\alpha$-Fe crystallites form first from the amorphous. These fine $\alpha$-Fe crystallites reacts with the remaining amorphous afterwards, leading to crystallization to $Nd_2Fe_{14}$B phase. The Co-substitution for Fe in $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ ($\mu$x=0∼0.6) alloys lower significantly the crystallization temperature of the amorphous phase to the $Nd_2Fe_{14}$B phase. The mechanically milled and annealed $Nd_{15}Fe_{77}B_8$ alloy without Co-substitution exhibits consistently better magnetic properties with respect to the alloys with Co-substitution.