• 대한임상독성학회지
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• 제9권2호
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• pp.109-112
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• 2011

Aluminum phosphide is commonly used as a rodenticidal agent in agricultural workplaces. However, reported cases of aluminum phosphide poisoning in Korea are rare. Upon contact with moisture in the air, aluminum phosphide releases highly toxic phosphine gas ($PH_3$). $PH_3$ is readily absorbed through lung epithelium and into the bloodstream. Phosphine may cause denaturing of oxyhemoglobin and enzymes important to respiration and metabolism, and also may effect cellular membranes. There are numerous complications associated with acute aluminum phosphide poisoning including gastrointestinal, respiratory, and cardiac toxicities. We report the case of a 46-year-old man who suffered from respiratory and cardiac toxicities after unintentional aluminum phosphide exposure. More intensive education for prevention is recommended.

• Applied Biological Chemistry
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• 제32권3호
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• pp.265-269
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• 1989

쌀 포장을 밀봉함으로서 해충 방제 효과와 최적 인화늄 훈증 농도에 대하여 시험하였다. 가마니, PP대, 종이 포대에서는 쌀바구미가 증가되었으나 0.1mm PE 밀봉과 완전 밀봉한 병에서는 저장후 60일에 완전히 사멸되었으며 품질 변화도 적었다. 곡물 $m^3$당 1 정(錠)의 인화늄 정제를 0.15mm 두께의 PE film으로 복포하여 훈증함으로써 쌀바구미를 완전히 사멸할 수 있었다.

• 농촌의학ㆍ지역보건
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• 제31권1호
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• pp.63-79
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• 2006

Korea's self-sufficient food ratio on a quantity basis remained a low 27.6 per cent for cereals in year 2004. Even the public auction of imported rice from the United States kicked off a couple of days ago to allow foreign rice to be sold directly to consumers on the Korea market for the first time. Therefore the safety of imported food must be a great concern of Korean consumers. All imported agricultural products are supposed to be quarantined for controlling the insect and inspected for the potent risk like residual pesticides, aflatoxin, sulfur dioxide and genetically modified. agricultural products. The 12 percent of agricultural products contained the insects detected by National Plant Quarantine was fumigated with methyl bromide or aluminum phosphide and entered the custom. The most large portion of violated agricultural products (24 cases in 2004) inspected by Korea Food and Drug Administration was dried herbal medicinal foods contaminated by sulfur dioxide which must be treated when they were dried in China. The second factor made the imported agricultural products to be criminals (19 cases in 2004) was residual pesticides. Genetically modified agricultural products like soybean and corn are under control by labelling in Korea. Genetically modified soybean and corn have been used for oil expression mostly. It is the time to set up realistic risk assessment system for our consumer with the pouring imported agricultural products.

• 한국진공학회지
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• 제12권4호
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• pp.251-256
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• 2003

분자선에피탁시법을 이용하여 InP(001) 기판위에 성장한 InAlAs 에피층의 특성에 대한 성장온도 (370-$430 ^{\circ}C$)의 효과를 Normalski 현미경, 원자력현미경 (AFM), 광발광 (PL), 이중결정 x-선 회절법 (DCXRD)을 사용하여 분석하였다. InAlAs 에피층의 표면형상, 구조적, 광학적 특성은 370-$400^{\circ}C$에서 성장한 시료에서는 성장온도의 증가로 향상되지만, $430 ^{\circ}C$로 성장한 시료에서는 특성이 나빠졌다. 결과적으로 $400 ^{\circ}C$로 성장한 InAlAs 에피층의 특성이 가장 우수하였다.

• ETRI Journal
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• 제43권5호
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.