• Journal of The Korean Society of Clinical Toxicology
• /
• v.9 no.2
• /
• pp.109-112
• /
• 2011

Aluminum phosphide is commonly used as a rodenticidal agent in agricultural workplaces. However, reported cases of aluminum phosphide poisoning in Korea are rare. Upon contact with moisture in the air, aluminum phosphide releases highly toxic phosphine gas ($PH_3$). $PH_3$ is readily absorbed through lung epithelium and into the bloodstream. Phosphine may cause denaturing of oxyhemoglobin and enzymes important to respiration and metabolism, and also may effect cellular membranes. There are numerous complications associated with acute aluminum phosphide poisoning including gastrointestinal, respiratory, and cardiac toxicities. We report the case of a 46-year-old man who suffered from respiratory and cardiac toxicities after unintentional aluminum phosphide exposure. More intensive education for prevention is recommended.

• Applied Biological Chemistry
• /
• v.32 no.3
• /
• pp.265-269
• /
• 1989

Effects of air-tighteness of packing material and aluminum phosphide fumigation on mortality of rice weevil were studied during rice storage. Air-tight storage of rice in sealed bag of 0.1mm PE film or sealed glass bottle reduced the deterioration of rice quality and killed all rice weevils after 60 days storage, while paper bag, PP bag and straw bag storage kept them alive. One tablet of aluminum phosphide in one cubic meter heap of rice packed in PP bag was sufficient to kill all rice weevil in it, when the heap was covered by 0.15 mm PE film during fumigation.

• Journal of agricultural medicine and community health
• /
• v.31 no.1
• /
• pp.63-79
• /
• 2006

Korea's self-sufficient food ratio on a quantity basis remained a low 27.6 per cent for cereals in year 2004. Even the public auction of imported rice from the United States kicked off a couple of days ago to allow foreign rice to be sold directly to consumers on the Korea market for the first time. Therefore the safety of imported food must be a great concern of Korean consumers. All imported agricultural products are supposed to be quarantined for controlling the insect and inspected for the potent risk like residual pesticides, aflatoxin, sulfur dioxide and genetically modified. agricultural products. The 12 percent of agricultural products contained the insects detected by National Plant Quarantine was fumigated with methyl bromide or aluminum phosphide and entered the custom. The most large portion of violated agricultural products (24 cases in 2004) inspected by Korea Food and Drug Administration was dried herbal medicinal foods contaminated by sulfur dioxide which must be treated when they were dried in China. The second factor made the imported agricultural products to be criminals (19 cases in 2004) was residual pesticides. Genetically modified agricultural products like soybean and corn are under control by labelling in Korea. Genetically modified soybean and corn have been used for oil expression mostly. It is the time to set up realistic risk assessment system for our consumer with the pouring imported agricultural products.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.251-256
• /
• 2003

Indium aluminum arsenide(InAlAs) was grown by molecular beam epitaxy on (001) indium phosphide (InP) substrate and the effects of growth temperature on the properties of epitaxial layers were studied. In the temperature range of 370-$400 ^{\circ}C$, we observed that the surface morphology, optical quality and structural quality of InAlAs epilayers were improved as growth temperature increased. However, the InAlAs epilavers grown at $430 ^{\circ}C$ have the bad surface morphology and show the same trends as structural and epical quality. As a result of these measurements, it is suggested that the InAlAs epilayers of very good properties can be grown at $400 ^{\circ}C$.

• ETRI Journal
• /
• v.43 no.5
• /
• pp.909-915
• /
• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.