• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.564-569
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• 2010

Highly anti-reflective optical property has been focussed in the field of thin film and display because of increasing demands to the high transparency and clearness of optical component. In this study, to obtain anti-reflective property, the formation of aluminium oxide with nanoscaled flowerlike frame structure was introduced as oxide material monolayer on the substrate by hydrothermal synthesis through sol-gel method. The properties of coating layer were measured by the means of UV-Vis spectroscopy, FT-IR spectroscopy, XRD, and FE-SEM. The morphology of coating layer in alumina-sol coated samples was controlled by hydrothermal temperature and time with aid of ultrasound. It was found that high transparency and anti-reflective optical properties were obtained the formation of flowerlike nanoframe structure.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.323-330
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• 1998

Mixed oxide compounds of potential usefulness for fibre coatings (hexagonal celsian, $BaAl_2Si_2O_8$ and lanthanum hexaluminate, $LaAl_{11}O_{18}$) or for matrix materials (yttrium aluminium garnet, $Y_3Al_5O_{12}$) were prepared by hybrid sol-gel synthesis and their thermal crystallisation was monitored by thermal analysis, X-ray diffraction and multinuclear solid state MAS NMR. All the gels convert to the crystalline phase below about $12200^{\circ}C$, via amorphous intermediates in which the Al shows and NMR resonance at 36-38 ppm sometimes ascribed to Al in 5-fold coordination. Additional information about the structural changes during thermal treatment was provided by $^{29}Si$, $^{137}Ba$ and $^{89}Y$ MAS NMR spectroscopy, showing that the feldspar framework of celsian begins to be established by about $500^{\circ}C$ but the Ba is still moving into its polyhedral lattice sites about $400^{\circ}C$ after the sluggish onset of crystallization. Lanthanum hexaluminate and YAG crystallise sharply at 1230 and $930^{\circ}C$ respectively, the former via $\gamma-Al_2O_3$, the latter via $YAlO_3$. Yttrium moves into the garnet lattice sites less than $100^{\circ}C$ after crystallisation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.11
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• pp.36-43
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• 2008

In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.1-63
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• 2003

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2005.10a
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• pp.173-177
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• 2005

리튬이온 2차전지(Lithium ion battery, LIB)는 기존에 사용되던 전지에 비해 에너지 밀도가 높고 충방전 사이클이 우수하다. 이 때문에 휴대전화와 노트북 등에 수요가 급속하게 증가하고 있으며 1995년 LIB의 생산량은 4천만 개에서 2004년에는 약 8억 개로 20배 이상 증가하였다. 이에 따라 폐LIB도 급속하게 증가하게 되어 전국적인 재활용 시스템의 확보가 필요한 실정이다. 본 연구에서는 폐LIB에 함유되어 있는 유가금속 중에서 리튬코발트옥사이드(이하 $LiCoO_2$)를 회수하기 위하여 분쇄기(orient vertical cutting mill)와 진동 Screen을 사용하여 유기분리막, 금속류(Aluminium foil, Copper foil, case 등) 그리고 전극물질(lithium cobalt oxide와 graphite 등의 혼합 분말)로 분리하였다. 전극물질에서 $LiCoO_2$와 graphite 분리를 위한 전처리 단계로서 $500^{\circ}C$ 정도의 열처리를 하여 $LiCoO_2$의 표면 성질을 변화시켜 부유선별에 의해 $LiCoO_2$와 graphite의 분리가 가능하도록 하였다. 부유선별 실험 결과 93% 이상의 순도를 가지는 $LiCoO_2$를 92% 이상 회수할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.1-39.1
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• 2011

본 연구에서는 전해증착법을 이용하여 결정성 ZnTe 나노와이어를 성장시켰고, 구조적 및 전기적 특성을 평가하였다. 또한 나노와이어 성장에 앞서, 결정성 ZnTe 박막을 전해증착법으로 형성하였고, 그 박막의 특성을 관찰하였다. 화학양론적(stoichiometric) 조성을 가지는 박막을 성장시키기 위하여, 순환전류전압법(cyclicvoltammetry)을 이용하여 Zn, Te, 이온들과 구연산 착화체(citrate-complexes)로 구성된 수용액 전해질에서 각 원소의 환원전위 분석이 이루어졌고, 과전압(overpotential)과 전해질 온도와 농도등과 같은 전해증착 조건에 따라 박막을 증착하였다. 각 조건에서 전해증착된 박막은 주사전자현미경(SEM)과 EDS를 이용하여 표면과 두께 그리고 성분분석을 하였고, XRD 분석법을 이용하여 박막의 결정성 변화를 관찰하였다. 박막증착 실험에서의 알맞은 증착조건을 나노와이어 전해증착실험에 적용하여, 다공성의 양극산화알루미늄(Anodic Aluminium Oxide, AAO) 템플레이트를 이용하여 bottom-up 방식으로 결정성 ZnTe 나노와이어를 성장시켰다. 수산화 나트륨(NaOH)용액을 이용하여 템플레이트를 선택적으로 에칭하여 제거한 후, ZnTe 나노와이어의 구조적 및 전기적 특성을 분석하였다.

• Journal of Technologic Dentistry
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• v.33 no.4
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• pp.339-347
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• 2011

Purpose: This study was investigated the bonding strength of two kinds of Ni-Cr alloy with respect to the condition of surface treatment. Methods: The surface treatment was performed on the two kinds of Ni-Cr alloy (B alloy and R alloy) specimens, which were sandblasted with $50{\mu}m$, $110{\mu}m$, and $250{\mu}m$ aluminium oxide and were treated with opaque application (paste and wash opaque). The roughness on the surfaces of the specimens was observed. The metal-ceramic interfaces were analyzed with EPMA in order to ionic diffusion, and the shear test was performed. Results: The BA250 specimen, which has higher surface roughness, showed the highest bonding strength in B specimens. In R specimens, the bonding strength of RA110 specimen was the highest. Conclusion: B specimen formed a mechanical bond between metal-ceramic interfaces; however, in the case of R specimen, a chemical bond was formed between that interfaces. There was no significant statistical difference between the bonding strengths of two types of specimens (p>0.05).