• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.111-117
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• 2009

This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.480-481
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• 2006

The n-type $(95%Bi_2Te_3-5%Bi_2Se_3)$ compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% $SbI_3$ doped $95%Bi_2Te_3-5%Bi_2Se_3$ alloy were investigated. Seebeck coefficient $({\alpha})$ and Electrical resistivity $(\rho)$ increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of $95%Bi_2Te_3-5%Bi_2Se_3$ alloy was increased due to the relative high density. The compound with ${\sim}300\;{\mu}m$ size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using $200[\sim}300{\mu}m$ powder size shows the highest compressive strength.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.101-106
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• 2015

We designed, developed and characterized a multi-segmented tissue equivalent proportional (TEPC) counter for microdosimetry. The energy resolution of the multi-segmented TEPC was about 12% for $^{241}Am$ 5.45 MeV alpha particles. The resolution was better than 33% for a single un-segmented TEPC. A compact and low power consumption TEPC could be made by using digital pulse processor (DPP). We also successfully calibrated the TEPC by using $^{252}Cf$ standard neutron source in Korea Research Institute of Standards and Science (KRISS). According to the results, the TEPC is useful for several application of radiation monitoring such as a neutron monitor, air crew monitor and space dosimeter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.125-130
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• 2006

In this study, tests of brain waves were carried out to investigate the driver's physiological characteristics by the change of the headlight. The participants were 20 men in their 20s and twenty-three different conditions in combinations of waveform of light, voltage, and alteration time were used. The measurement of the brain waves was performed by internationally standardized 10-20 method using LXE3232-RF. The results were analyzed by Power Spectrum Analysis using alpha-, and beta-wave and by the analysis of different brain domains using Brain wave Map. The results were as follows. 1. From the results of the Brain wave Map analysis, it was suggested that A waveform increases mental stress and B waveform affects mental and visual stress. The longer the stimulation time, the more stress level was detected. 2 The voltage alteration time of B waveform should be kept less than 1500msec, and the voltage should not fall below 11.5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.232-232
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• 2010

정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.1-191.1
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• 2013

현재 산업계 전반적으로 사용되고 있는 박막형 태양전지 투명 전도막의 재료로는 ITO 와 Al, In, Ga, B, Si, F 등으로 도핑된 ZnO 박막이 사용되고 있으며, 그 중에서도 Al 이 도핑된 ZnO 박막은 넓은 밴드갭을 가진 n-type 반도체로서, 적외선 및 가시광 영역에서의 높은 투과성과 우수한 전도성을 가지며, 고온에서 안정된 전기적 특성, 낮은 원가 등의 장점을 지녀 그 응용 연구가 활발히 이루어지고 있다 [1]. 본 연구에서는 RF magnetron Sputter 법을 이용하여 Flexible 기판 위에 AZO 박막을 증착하였다. 실험변수로는 RF power, Pressure등을 이용하였고, 최적조건에서의 박막의 투과도는 90%이상, 면저항은 30 ${\Omega}/{\square}$ 이하를 나타내었다. 그리고 (주)인포비온에서 원천기술을 갖고있는 EBA technology를 이용하여 후처리 하여 전기적, 광학적, 구조적인 특성의 변화를 관찰하였다. AZO 박막의 두께를 측정하기 위해 ${\alpha}-step$과 SEM을 이용하였고, 투과도는 UV-Vis spectrometer를 사용하여 박막의 투과도 변화를 관찰 하였다. 전기적인 특성은 4-Point probe를 이용하여 측정하였다. 또한, 박막의 결정성과 거칠기의 변화는 XRD(X-ray Diffraction)와 원자간력현미경(Atomic Force Microscope; AFM) 을 이용하여 측정하였으며, 전기 광학적 특성 변화는 Figure Of Merit(FOM) 수치로 분석하였다. 본 연구에서 AZO 박막의 특성은 EBA 조사 후 특성의 향상이 이루어지는 것을 관찰할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.122.2-122.2
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• 2013

플라즈마 전해산화(plasma electrolytic oxidation) 기술을 이용하여 제작한 산화 피막은 피막의 하층부(기지 금속과 접해 있는 부분)는 ${\alpha}$-phase의 산화물이 대부분을 이루고 있으며, 기지 금속과의 접착성도 뛰어나다. 하지만 피막의 표면이 거칠고, 다공성을 띄는 특징을 보인다. 본 연구에서는 피막의 거칠기와 다공성을 제어하기 위한 방법으로 전해액에 포함된 불순물(Si, P 등) 조성비의 변화에 초점을 맞췄으며, 불순물(Si, P 등)의 조성비를 변화시켜 가면서 실험을 진행하였다. 실험에는 60 Hz, 35 kW(700 V, 50 A)의 power supply가 사용되었다. 또한, 실험의 결과로 제작된 시편의 내전압(10 V/s), 내플라즈마(200 W, 10 min, Ar 5 sccm, 200 mTorr), 내화학성(HCl 36.46 wt%, 120 min) 테스트를 진행하였으며, 실험 결과를 바탕으로 ${\phi}300$ 대면적 시편의 제작도 완료하였다.

• Electronics and Telecommunications Trends
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• v.34 no.4
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• pp.23-31
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• 2019

Deep learning is a hot topic in both academic and industrial fields. Deep learning applications can be categorized into two areas. The first category involves applications such as Google Alpha Go using interfaces with human operators to run complicated inference engines in high-performance servers. The second category includes embedded applications for mobile Internet-of-Things devices, automotive vehicles, etc. Owing to the characteristics of the deployment environment, applications in the second category should be bounded by certain H/W and S/W restrictions depending on their running environment. For example, image recognition in an autonomous vehicle requires low latency, while that on a mobile device requires low power consumption. In this paper, we describe issues faced by embedded applications and review popular inference engines. We also introduce a project that is being development to satisfy the H/W and S/W requirements.

• Current Applied Physics
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• v.18 no.12
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• pp.1492-1495
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• 2018

This paper studies the influence of temperature on electrical resistivity in ${\alpha}-InAs$ thin films between 30 K-2K based on the analysis of Mott VRH model and ES VRH model. The effect of the interactions between electrons at lower temperature must be considered, therefore, ES VRH conduction will dominate mechanism, and the crossover from Mott to ES VRH conduction is observed about 7 K. Based on available experiment data and VRH conduction model, the parameters of VRH conduction are determined. And the calculated values of $T_C$ are consistent with the experimental results. In addition, $R_M/{\xi}$, ${\Delta}_M/kT$, $R_{ES}/{\xi}$ and ${\Delta}_{ES}/kT$ are satisfied with the validity of Mott and ES models. Furthermore, the temperature dependence of resistivity at low temperature obeys a universal scaling law, which well describes the overall temperature range of VRH conduction. However, the values of $T^{\prime}_M$ from the universal function are two order of magnitudes lower than $T_M$ deduced from fitting experiment.