• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.88-94
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• 1997

The oxidation behavior of the NiCrAlY bond coat and thermal fatigue failure in the plasma-sprayed thermal barrier coating system, ZrO2.8wt%Y2O3 top coat/Ni-26Cr-5Al-0.5Y bond coat/Hastelloy X superalloy substrate, in commercial use for finned segment of gas turbine burner were investigated. The main oxides formed in the bond coat were NiO, Cr2O3, and Al2O3. It divided the oxide distribution at this interface into two types whether an Al2O3 thin layer existed beneath ZrO2/bond coat interface before operation at high temperature or not. While a continuous layer of NiO was formed mainly in the region where the Al2O3 thin layer was present, the absence of it resulted in the formation of mixture of Cr2O3 and Al2O3 beneath NiO layer. Analyses on the fracture surface of specimen spalled by thermal cycling showed that spalling occurred mainly along the ceram-ic coat near ZrO2/bond coat oxide layer interface, but slightly in the oxide layer region.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.531-536
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• 2011

Al doped $LiMn_2O_4$ ($LiMn_2O_4:Al$) synthesized by several Al doping process and Solid State method. The Al contents in $Mn_{1-x}Al_xO_2$ for $LiMn_2O_4:Al$ were analyzed 1.7 wt% by EDS. The $LiMn_2O_4:Al$ confirmed cubic spinel structure and approximately 5 ${\mu}m$ particles regardless of three kinds of doping process by solid state method. In the result of electrochemical performances, initial discharge capacity had 115 mAh/g in case of $LiMn_2O_4$ and 111 mAh/g of $LiMn_2O_4:Al$ after 100th cycle at room temperature. But the capacity retention results showed that $LiMn_2O_4$ and $LiMn_2O_4:Al$ were 44% and 69% respectively in the 100th cycle at 60$^{\circ}C$. Therefore we are confirmed that $LiMn_2O_4:Al$ increased the capacity retention about 25% than $LiMn_2O_4$, thus the effect of Al dopping on $LiMn_2O_4$ capacity retention.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.493-498
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• 2002

$Al_2O_3$ is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since $OH^-$ radical in $Al_2O_3$ films deposited by ALD using TMA and $H_2O$ degrades the good properties of $Al_2O_3$, TMA and $O_3$ were used to deposite $Al_2O_3$ films and the effects of $O_3$ on the properties of the $Al_2O_3$ films were investigated. The growth rate of the $Al_2O_3$ film under the optimum condition was 0.85 $\AA$/cycle. According to the XPS analysis results the $OH^-$ concentration in the $Al_2O_3$ film deposited using $O_3$ is lower than that using $H_2O$. RBS analysis results indicate the chemical formula of the film is $Al_{2.2}O_{2.8}$. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the $Al_2O_3$ film deposited by ALD using $O_3$ is nearly 100%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1278-1282
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• 2004

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.98.2-98.2
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• 2000

• Journal of the Korean Ceramic Society
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• v.29 no.8
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• pp.667-673
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• 1992

The alumina-zirconia composite powders of core particle ZrO2 coated with Al2O3 were prepared by the hydrolysis-deposition of the mixed aluminum salt solution of Al2(SO4)3-Al(NO3)3-Urea. The effects of hydrolysis reaction and coating parameters on characteristics of coated powders and composites were also investigated. The degree of coating could be estimated from the ratio of tetra-/mono-ZrO2 present at the room temperature after heat-treating coated powders at 120$0^{\circ}C$ and the result of TEM observations. When the content of ZrO2 in the dispersed coating system, the coating time, and the volume ratio of water/solution were 50 mg/g, 180 min, and 5, respectively the coating efficiency was maximum (the ratio of tetra-/mono-ZrO2 was 87/13). The relative densities of coated Al2O3-ZrO2 composites sintered at 1$650^{\circ}C$ for 4 hrs were about 91~98% and the maximum ratio of tetra-/mono-ZrO2 in Al2O3-20wt% ZrO2 composites was 62/38.

• Journal of Environmental Science International
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• v.22 no.9
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.35-41
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• 2017

$TiO_2$, $Al_2O_3$, and $TiO_2-Al_2O_3$ nanolaminated films were grown by atomic layer deposition (ALD) on the 316L stainless steel (SS316L) substrates at a temperature of $150^{\circ}C$. The growth kinetics of $ALD-TiO_2$ and $Al_2O_3$ thin films were systematically investigated in order to precisely control the thickness of each layers in the $TiO_2-Al_2O_3$ nanolaminated films using a high-resolution transmission electron microscopy. And, the exact deposition rates of $ALD-TiO_2$ on $Al_2O_3$ surface and $ALD-Al_2O_3$ on $TiO_2$ surface were revealed to be 0.0284 nm/cycle and 0.11 nm/cycle, respectively. At given growth conditions, the microstructures of $TiO_2$, $Al_2O_3$ and $TiO_2-Al_2O_3$ nanolaminated films were amorphous. The potentiodynamic polarization test revealed that the $TiO_2-Al_2O_3$ nanolaminated film coated SS316L had a best corrosion resistance, although all ALDcoated SS316L exhibited a clear improvement of the corrosion resistance compared with a bare SS316L.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.420-423
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• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.