• Title/Summary/Keyword: AlN thin films

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Magnetic anisotropy of Al/Tb-Fe-Co multilayer thin films (Al/Tb-Fe-Co 다층박막의 자기적 이방특성)

  • 김명한;문정탁;신웅식;임기조
    • Electrical & Electronic Materials
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    • v.5 no.1
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    • pp.8-13
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    • 1992
  • 일련의 Al/Tb-Fe-Co 다층박막 시편이 DC마그네트론 스퍼터링에 의해 제조되었다. 이 박막들은 (xA/yB)n의 형태이고 여기서 x와 y는 각각 Al 및 Tb-Fe-Co 박막의 두께를 나타내고 n은 각 박막의 수를 나타낸다. 각 박막의 두께는 2~40nm이다. Al과 Tb-Fe-Co박막의 두께변화에 따른 다층박막의 자기적 성질이 vibration sample magnetometry(VSM)에 의해 측정되었다. 이들 다층박막은 동일한 스퍼터링조건에서 제조되고 수평 자기적 이방성 특성을 보이고 있는 단층 Tb-Fe-Co박막을 기준시편으로 하여 자기적 성질이 비교되었다. 다층박막 시스템에서는 현저한 계면 또는 박막두께의 효과가 발견되었으며 이들 효과에 의해 단층박막의 수평자기체가 다층박막에서는 강한 수직자기체로 변화되는 것을 알 수 있고, 또한 Al과 Tb-Fe-Co합금 경계구역에 스퍼터링에 따른 약 2nm두께의 dead layer가 존재함이 입증 되었다.

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Effectiveness of medical coating materials in decreasing friction between orthodontic brackets and archwires

  • Arici, Nursel;Akdeniz, Berat S.;Oz, Abdullah A.;Gencer, Yucel;Tarakci, Mehmet;Arici, Selim
    • The korean journal of orthodontics
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    • v.51 no.4
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    • pp.270-281
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    • 2021
  • Objective: The aim of this in vitro study was to evaluate the changes in friction between orthodontic brackets and archwires coated with aluminum oxide (Al2O3), titanium nitride (TiN), or chromium nitride (CrN). In addition, the resistance of the coatings to intraoral conditions was evaluated. Methods: Stainless steel canine brackets, 0.016-inch round nickel-titanium archwires, and 0.019 × 0.025-inch stainless steel archwires were coated with Al2O3, TiN, and CrN using radio frequency magnetron sputtering. The coated materials were examined using scanning electron microscopy, an X-ray diffractometer, atomic force microscopy, and surface profilometry. In addition, the samples were subjected to thermal cycling and in vitro brushing tests, and the effects of the simulated intraoral conditions on the coating structure were evaluated. Results: Coating of the metal bracket as well as nickel-titanium archwire with Al2O3 reduced the coefficients of friction (CoFs) for the bracket-archwire combination (p < 0.01). When the bracket and stainless steel archwire were coated with Al2O3 and TiN, the CoFs were significantly lower (0.207 and 0.372, respectively) than that recorded when this bracket-archwire combination was left uncoated (0.552; p < 0.01). The friction, thermal, and brushing tests did not deteriorate the overall quality of the Al2O3 coatings; however, some small areas of peeling were evident for the TiN coatings, whereas comparatively larger areas of peeling were observed for the CrN coatings. Conclusions: Our findings suggest that the CoFs for metal bracket-archwire combinations used in orthodontic treatment can be decreased by coating with Al2O3 and TiN thin films.

Electroluminescence Properties from Blend films of poly(3-hexylthiophene) and poly(N-vinylcarvazole) (P3HT와 PVK 블렌드 막에서의 전계 발광 특성)

  • Kim, Dae-Jung;Kim, Shang-Gi;Gu, Hal-Bon;Jung, Un-Jo;Park, Ge-Chun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.972-975
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    • 2002
  • Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

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Effects as Plasma Treatments on CdS Buffer Layers in CIGS Thin Film Solar Cells

  • Jo, Hyun-Jun;Sung, Shi-Joon;Hwang, Dae-Kue;Bae, In-Ho;Kim, Dae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.171-171
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    • 2012
  • We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

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Etching Characteristics of Polyctystalline 3C-SiC Thin Films by Magnetron Reactive Ion Etching (마그네트론 RIE를 이용한 다결정 3C-SiC의 식각 특성)

  • Ohn, Chang-Min;Kim, Gwiy-Yeal;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.331-332
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    • 2007
  • Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

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Temperature Dependence of the $SrTiO_3$ Capacitor Thin Films Deposited by RF Magnetron Sputtering (고주파 마그네트론 스퍼터링에 의한 $SrTiO_3$ 캐패시터 박막의 온도 의존성)

  • Oh, Gum-Kon;Lee, Woo-Sun;Kim, Nam-Oh;Kim, Jai-Min;Lee, Byung-Sung;Kim, Sang-Yong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.429-435
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    • 1999
  • The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

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