• 한국결정학회지
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• 제5권2호
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• pp.85-92
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• 1994

펄스 레이저 증착법을 이용하여 강유전체 Bi4T13012 박막을 laA109(001) 위에 성장시켰다. 넓은 영역의 온도에서 증착한 박막의 상 형성과 구조적 성질을 X선 회절법을 이용하여 조사하였다. 740℃에서 증착한 박막은 박막의 c-축이 기판에 수직한 형태의 에피 성장의 경향을 보인다. 펄스 레이저 증착법을 이용하여 Bi4Ti3O12/YBa2Cu3O7-x/LaAlO3 복합구조를 in-situ 성장시켰다. Yba2Cu3O7-x의 a-, b-축이 LaAlO3와 완벽하게 평행하게 배열되어 있지 않음에도 불구하고, Bi4Ti3012 박막은 에피 성장의 경향을 보인다.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.171-171
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• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1497-1499
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• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 30 [mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as y-type film. In processing of a device manufacture. we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al. the number of accumulated layers are 9$\sim$21. Also. we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.175-176
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• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.101-104
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• 2002

Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.