• 한국세라믹학회지
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• 제34권5호
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• pp.505-511
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• 1997

The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.33-33
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• 1998

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.

• 한국결정성장학회지
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• 제7권4호
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• pp.619-625
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• 1997

$Si_3N_4$에 2 wt% $Al_2O_3$와 6 wt% $Y_2O_3$을 첨가한 분말을 가스압소결 방법으로 시편을 제조하였다. 이때 소결시 조건(온도, 압력, 시간) 변화에 대한 기계적 특성 변화를 비교하였다. 이때 나타난 결과에 의하면 $1900^{\circ}C$, 3 MPa에서 1시간 동안 유지시켰을 때 최적의 조건을 갖는다는 것을 보여주었다. 이는 온도를 높여 주거나 유지 시간을 길게 하였을 때 입자 조대화에 의해 기계적 특성이 떨어지는 것을 볼 수 있었다. 그러나 압력을 증가시킬 때에는 미세한 조직을 가지므로 기계적 특성은 좋아짐을 나타내지만 파괴 인성이 떨어지는 것을 볼 수 있었다. 이로 인해 소결시 최적의 조건을 찾는 것이 중요함을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제18권2호
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• pp.213-217
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• 1997

Magnesium reduction of Mo(N-C6H3-2,6-i-Pr2)2Cl2(DME) in the presence of trimethylphosphine led to a mixture of Mo(N-C6H3-2,6-i-Pr2)(PMe3)2Cl3, 1, and Mo2(PMe3)4Cl4, 2. In solution 1 is slowly air-oxidized to Mo(N-2,6-i-Pr2-C6H3)(OPMe3)(PMe3)Cl3, 3. 1 is chemically inert to carbon nucleophiles (ZnMe2, ZnEt2, AlMe3, AlEt3, LiCp, NaCp, TlCp, NaCp*, MeMgBr, EtMgBr), oxygen nucleophiles (LiOEt, LiO-i-Pr, LiOPh, LiOSPh), and hydrides (LiBEt3H, LiBEt3D). Crystal data for 1: orthorhombic space group P212121, a=11.312(3) Å, b=11.908(3) Å, c=19.381(6) Å, Z=4, R(wR2)=0.0463 (0.1067). Crystal data for 2: monoclinic space group Cc, a=18.384(3) Å, b=9.181(2) Å, c=19.118(3) Å, b=124.98(1)°, Z=4, R(wR2)=0.0228 (0.0568). Crystal data for 3: orthorhombic space group P212121, a=11.464(1) Å, b=14.081(2) Å, c=16.614(3) Å, Z=4, R(wR2)=0.0394 (0.0923).

• 열처리공학회지
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• 제16권6호
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• pp.329-334
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• 2003

Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.

• 한국기계가공학회지
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• 제21권5호
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• pp.77-83
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• 2022

A high-hardness tool material is required to reduce extreme abrasive wear when drilling carbon fiber reinforced plastic (CFRP). Single-crystal diamond is the hardest material in the world, but it is very expensive to be used as a cutting tool. Polycrystalline diamond (PCD) is a diamond grit fused at a high temperature and pressure, and diamond-like carbon (DLC) is an amorphous carbon with high hardness. This study compares DLC coatings and PCD inserts to conventional TiAlN-coated tungsten carbide drills. In fiberglass and carbon fiber reinforced polymer drilling, the tool wear of DLC-coated carbide was approximately half that of TiAlN-coated tools, and slight tool wear occurred in the case of PCD insert end drills.

• 한국결정성장학회지
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• 제9권5호
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• 한국결정성장학회지
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• 제7권2호
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• pp.224-234
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• 1997

적은 양의 침입형 불순물을 함유한 고순도 재료를 제조하기 위해 70 ㎾ 걸자 빔용해기를 제작하였으며 이를 이용해서 sponge Ti와 Ti-6Al-4V 합금을 용융시켰다. 전자 빔 용해법을 이용해 정련된 sponge Ti에 대한 실험 결과를 바탕으로 초기 용해 180초 동안에는 Ti의 순도가 증가하였지만 그 이후로는 크게 변화지 않는 것을 알 수 있었다. 그리고 Ti의 정련 결과, 침입형 불순물과 금속 불순물의 양을 포함한 전체 불순물의 양이 900 ppm인 고순도(99.9 wt%)의 Ti를 얻었다. Ti-6Al-4V 합금의 전자 빔 용해에 대한 실험 결과로부터 손실되는 Al의 양은 열역학적 데이터, regular solution model 그리고 model of solute removal kinetics를 통해서 판단할 수 있음을 알 수 있었으며, 이 모델들로부터 계산된 합금 조성과 실험을 통해서 구한 합금 조성이 일치하였다. 그리고 Ti-6Al-4V 합금의 조성은 매우 균일하였으며 이것은 EPMA line scanning을 통해서 확인하였다.

• 한국결정성장학회지
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• 제22권4호
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• pp.183-189
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• 2012

고온 열수송용 재료로 이용되는 Hastelloy X의 표면처리에 따른 고온물성 개선에 대한 연구를 수행하였다. Hastelloy X 기판 상에 각각 PVD법인 Arc discharge 및 Sputtering을 이용하여 TiAlN 및 $Al_2O_3$ 박막을 표면 코팅(overlay coating) 하였고, 분위기 분말을 이용하여 Al을 금속표면을 통해 확산시키는 방법인 Pack cementation법을 이용한 Al 확산코팅(diffusion coating: aluminiding)법을 이용한 표면처리를 수행하였다. 이들 표면처리가 Ni-Cr계 합금의 고온열처리에서 생성되는 두꺼운 불균질 산화물($Cr_2O_3$)형성 억제에 미치는 효과와 조성 및 표면미세구조가 물성에 미치는 영향에 대해 알아보기 위해, 표면처리 된 Hastelloy X 샘플들을 공기 및 헬륨가스 분위기에서 $1000^{\circ}C$로 열처리 하였으며, 열처리된 전후 시편들에 대해 상형성, 미세구조 및 고온 물성 변화를 측정하였다. 이러한 실험결과를 통하여 표면코팅법에 의한 TiAlN 및 $Al_2O_3$ 박막에 비해 Al 확산코팅한 경우 두꺼운 불균질 산화물($Cr_2O_3$)형성이 억제되어 보다 균질한 미세구조와 높은 내마모성 등 높은 고온 안정성을 보여주는 것을 확인할 수 있었다.