• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.129-134
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• 1983

MgO.$Al_2O_3$ polycrstalline spinel powder was subjected to vaporization over the temperature range of 1150-130$0^{\circ}C$ under H2 atmosphere. Diffusion coefficient of oxygen ion through the spinel were calculated using the measure vaporization rates as follows : D=28.4 exp(-901500/RT) Reference data of the vaporization rates of MgO.$8Al_2O_3$ single crystal spinel were applied to the vaporiza-tion model proposed in this study and were calculated to give the oxygen ion diffusion coefficients over the tempera-ture 1700-195$0^{\circ}C$. The obtained diffusion coefficients are as follows: $D=3.20{\times}106$ exp(-155600/RT)

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.25-34
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• 1986

This study was to refined the crystal structure of solid solution to determine the position and amount of Al in diopside and to relate crystal structure changes and properties of solid solution. Single crystals of the solid solution in the system CaO.MgO.$2 SiO_2-Al_2O_3$ were made from the melt with slow cooling and used to refine the structure. The following were obtained. 1. Tetrahedra rotated around axis parallel to the direction which the angle 03-03-03 became small. 2. Tetrahedron became large and regular. Average T-O bond distance increased 0.53 percent. 3. M1 octahedron became small and average M1-O bond distance decreased 1.1 percent. 4, M2 polyhedron became small and average M2-O bond distance decreased 0.37 percent Polythedron was affected not so much compared with any cation site. 5. Distance between metal ions distances between T and oxygens which were coordinated with M2 and meighboring tetrahedron distances between M2 and oxygens which coordinated with M1 and M2 were not changed almost. 6. $Al^{3+}$ substituted 4Mg^{2+}$ and $Si^{4+}$

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.84-89
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• 2009

The turbid/translucent, near colorless(milky) metamorphic sapphire samples from Sri Lanka have been characterized after the heat treatment in $N_2$ at $1650^{\circ}C$. As-received sapphire specimens became bluish-colored and exhibited more clarity after the heat treatment. It was found that the color change at inclusions zoning region is attributed by the dissolution. As received samples contain the micro/nano inclusions such as rutile($TiO_2$), ilmenite($FeTiO_3$), spinel($MgAl_{2}O_{4}$)/ulvospinel($Fe_{2}TiO_{4}$) and apatite($Ca_5(PO_4)_3$), which were dissolved by the heat treatment and form the blue color through $Fe^{2+}/Ti^{4+}$ charge transferring. The microstructures become different because as the dissolution of apatite($Ca_5(PO_4)_3(OH,F,Cl)$) in alumino silicates($Al_{2}SiO_{5}$) occurred, resulting in morphological change with the appearance of(Ca, Mg, Al) silicate on the surface. Both as-received and heat treated samples showed the rhombohedral crystal structure of $Al_{2}O_{3}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.99-104
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• 2017

Refractories used in low-rank coal gasification reactors are usually exposed in a highly corrosive $H_2S$ gas at less than $1000^{\circ}C$, and their mechanical properties such as erosion resistance and fracture strength decline with the exposure time. However, the cause of the degradation of the mechanical properties has little reported yet. In this paper, two kinds of castable refractories with different refractoriness had been exposed in a $H_2O/N_2/H_2S$ mixed gas with high $H_2S$ content for 100 hours at $900^{\circ}C$, and the changes of microstructure, crystalline phases and erosion resistance were compared before and after the corrosion test. The weight of the refractories decreases due to the elution of silica in the specimens after the corrosion test. The capillary porosities of the samples are reduced, but the erosion resistance of the samples is fatally weakened after the corrosion test. There also are changes in constituent phases; dmitryivanovite ($CaAl_2O_4$) and amorphous silica ($SiO_2$) disappear, and gypsum ($CaSO_4{\cdot}2H_2OS$) and kaolinite ($Al_2Si_2O_5(OH)_4$) newly appear after the corrosion test. It is obvious that the phase change from dmitryivanovite that works as a binding agent in the castable refractory to gypsum is the main reason of the degradation of the erosion resistance, because the mechanical properties of gypsum are much poorer than those of dmitryivanovite.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.473-473
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• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.377-387
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• 2023

Ni-W/Al₂O₃ nano-composites were electrodeposited on mild steel substrate for mechanical and corrosion resistance applications. This study focused on the preparation of Ni-W/Al₂O₃ nano-composite coating with various quantity of Al₂O₃ incorporations. The addition of Al₂O₃ in the electrolytes were varied from 1-10 g/L in electrolytes and the Al₂O₃ incorporation in Ni-W/Al₂O₃ nano-composite coatings were obtained from 1.82 to 13.86 wt.%. The incorporation of Al₂O₃ in Ni-W alloy matrix influenced the grain size, surface morphology and structural properties were observed. The distributions of Al₂O₃ particle in alloy matrix were confirmed using electron microscopy (FESEM and TEM) and EDAX mapping analysis. The crystal structure informations were studied using X-ray diffraction method and it confirms that the deposits having cubic crystal structure. The better corrosion rate (0.87 mpy) and microhardness (965 HV) properties were obtained for the Ni-W/Al₂O₃ nano-composite coating with 13.86 wt.% of Al₂O₃ incorporations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.185-188
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• 1996

The doped n-type $Al_{x}Ga_{1-x}Sb$ crystals were grown by the vertical Bridgman method at composition ratio x=0, x=0.1, x=02 respectively. The lattice constants of the $Al_{x}Ga_{1-x}Sb$ crystals were 6.096${\AA}$, 6.097${\AA}$, 6.106${\AA}$ at composition ratio respectively. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x-0 were n≡1 x $10^{17}$$cm^{-3}$, $\rho$≡0.15 ${\Omega}$-cm, ${\mu}$$_{n}$≡500 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x=0.1 were n≡2.96 x $10^{15}$$cm^{-3}$, $\rho$≡103 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K.

• Korean Journal of Crystallography
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• v.5 no.1
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• pp.24-32
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• 1994

The study of (0001), (1120) and (1011) GAN epitaxy films grown on the (0001),(1012) and (1120) α-Al2O3 substrates have been investigated using the haliar vapor phaes epitaxy(HVPE) method in Ga/HCI/NH3/He system. XRD, RHEED and SEM are used for the study of the films struction and surface morphology. Chemical composition of the film surface is estimsted by XPS. The following orientation relationships are observed; (0001) GaN /(0001) Al2O3 (1120) GaN/ (1012) Al2O3 and (0001) and (1011) GaN/ (1120) Al2O3 in accordance with growth conditions. The (0001) GaN films grown on(0001) and (1120) a-Al2O3 substrates at higer temperature(1050℃) have shown two dimensional grownth mechanism. Form SEM and RHEED, the smoother surface morphology and better structure are observed for the (1011) GaN films grown on (1120) sapphire at higer temperature.