• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.9-13
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• 2002

최근, 효율적인 다층박막 구조로된 풀칼라 유기 전계발광소자 (organic electroluminescient device, OELD)의 시제품이 개발된바 있다. 본 연구에서는 ITO (indium tin oxide)/glass 투명기판위에 다층구조의 OELD 소자를 진공 열증착법으로 제작하였다. 사용된 저분자 유기화합물은 전자수송 및 주입층으로 $Alq_3$(trim-(8-hydroxyquinoline)aluminum)와 CTM (carrier transfer material) 물질을 사용하였고, 정공수송 덴 주입층으로는 TPD (triphenyl-diamine)와 CuPc (copper phthalocyanine)를 각각 증착하였다. 발광휘도는 임계전압 10 V 이상에서 급격히 증가하였으며, $A1/CTM/Alq_3$/TPD/1TO 구조로된 OELDs 소자의 경우- l7 V전압에서 430 cd/$m^2$의 휘도특성과 파장 512 nm의 녹색 발광을 나타내었다. 한편 $Li-A1/Alq_3$/TPD/CuPC/1TO 다층구조로된 소자의 발광파장은 508 nm 이며, 발광휘도는 17 V에서 650 cd/$m^2$의 값을 얻을 수 있었다. Li-Al 전극을 갖는 다층구조에서 발광휘도의 증가는 정공주입층인 CuPc의 적층으로 발광층에서 재결합 효율이 개선되었기 때문이며, 또한 Li-Al 전극의 경우 Al전극에 비해 낮은 일함수(work function)를 갖기 때문으로 판단된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.605-608
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• 2004

A novel blue-green emitting aluminum complex was developed by employing 8-hydroxyquinoline as co-ligand for enhancement of electron transport and light emission abilities so that the electroluminescent (EL) devices do not need additional electron transport layer. The aluminum complex (PAlQ) of 8-hydroxyquinoline and ${\alpha}$-pyridoin was synthesized The structure of the PAlQ was elucidated by FT-IR, UV-Vis and XPS. The PAlQ complex showed thermal stability up to 350$^{\circ}C$ under nitrogen flow by TGA. The photoluminescence (PL) was measured from solid film of the PAlQ complex on quartz substrate. The EL device was fabricated by the vacuum deposition. The device having the structure of ITO/TPD/PAlQ/Al was studied, where N,N-bis(3-methylphenyl}-N,N'-diphenyl-benzidine (TPD) was used as a hole transporting layer. The EL device emitted a blue-green light.

• 한국표면공학회지
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• 제41권6호
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• pp.255-263
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• 2008

Generally, deposition mechanism of diamond particle is mainly embedding effect in the kinetic spray process. Accordingly, in spite of high cost, helium gas was employed as process gas to get high diamond fraction in the composite coating. In this study, the deposition behavior of bronze/diamond by kinetic spray process was compared using different process gas (helium and nitrogen). Bare (mean size of $5{\mu}m$, $20{\mu}m$) and nickel coated diamond (mean size of $26{\mu}m$) were deposited on Al 6061-T6 substrate with fixed process temperature and pressure. For comparison with experimental results, plastic deformation behavior of nickel layer was simulated by finite element analysis (using ABAQUS/Explicit 6.7-2). The size, broken ratio, and fraction of diamond in the composite coating were analyzed through scanning electron microscopy and image analysis method. The uniform distribution and deposition efficiency of diamond particles in the coating layer could be achieved by tailoring the physical properties of the feedstock.

• 한국재료학회지
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• 제14권2호
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Advanced Composite Materials
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• 제18권4호
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• pp.351-364
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• 2009

The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• 방사선산업학회지
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• 제5권1호
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• pp.95-99
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• 2011

The electrical and mechanical properties of electrode for radiation detection are very important. In general, Au electrode and CZT crystal are combined to form ohmic contacts, and the best energy resolution is shown at the Au electrode. The metal contacts are fabricated by electroless deposition method, sputtering deposition method and thermal evaporation method. The electrode fabrication is easy with use of the thermal evaporation method, while an adhesive strength is weak. Thus interface materials such as Ag, Al and Ni were investigated to overcome defects generated by the this method. The thickness of the interface material between the Au electrode and the CZT crystal was 100 Angstroms, the Au electrode with thickness of 400 Angstroms was deposited. The Al+Au electrode is shown that the results of current-voltage and radiation response are similar to results of Au electrode.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.