• 제목/요약/키워드: Al2O3/R2O

검색결과 517건 처리시간 0.14초

(1-x)$NdAlO_3$-$xCaTiO_3$세라믹스의 결정구조와 마이크로파 유전특성 연구 (Crystal Structure and Microwave Dielectric Properties of (1-x)$NdAlO_3$-$xCaTiO_3$Ceramics)

  • 우창수;김민한;남산;최창학;이확주;박현민
    • 한국세라믹학회지
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    • 제37권12호
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    • pp.1229-1233
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    • 2000
  • (1-x)NdAlO$_3$-xCaTiO$_3$세라믹스의 결정구조와 마이크로파 유전특성을 조사하였다. 시편의 결정구조는 조성에 따라서 변화하였는데, 그 결정구조는 x$\leq$0.1일 때는 능면정(rhombohedral) 구조를, 0.3$\leq$x$\leq$0.7에서는 정방정 (tetragonal) 구조를 그리고, x$\geq$0.7일 때 다시 사방정 (orthorhombic) 구조로 바뀌었다. 또한 (1-x)NdAlO$_3$-xCaTiO$_3$세라믹스에서 이차상의 두 종류가 발견되었다. x$\leq$0.5인 시편에서는 Nd$_4$Al$_2$O$_{9}$상이, x$\geq$0.7인 시편에서는 Al-rich상이 발견되었다. x가 증가함에 따라, 유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($ au$$_{f}$ )가 증가하였고, Q$\times$f 값은 x의 증가에 따라 증가하며, x=0.5일 때 최대값을 얻었다. 그리고 0.3NdAlO$_3$-0.7CaTiO$_3$에서 Q$\times$f=46,000, $\varepsilon$$_{r}$=45 그리고 $\tau$$_{f}$ =-1.5 ppm/$^{\circ}C$의 우수한 마이크로파 유전특성을 얻을 수 있었다.

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매립지가스(LFG)로부터 합성가스 제조를 위한 개질반응 연구 (A Study on Reforming Reaction for Preparation of Synthesis Gas from Land-Fill Gas)

  • 조욱상;윤중섭;박성규;모용기;백영순
    • 한국수소및신에너지학회논문집
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    • 제25권6호
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    • pp.570-576
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    • 2014
  • LFG (Land-Fill Gas) includes components of $CH_4$, $CO_2$, $O_2$, $N_2$, and water. The preparation of synthesis gas from LFG as a DME (Dimethyl Ether) feedstock was studied by methane reforming of $CO_2$, $O_2$ and steam over NiO-MgO-$CeO_2$/$Al_2O_3$ catalyst. Our experiments were performed to investigate the effects of methane conversion and syngas ratio on the amount of LFG components over NiO-MgO-$CeO_2$/$Al_2O_3$ catalyst. Results were obtained through the activity reaction experiments at the temperature of $900^{\circ}C$ and GHSV of 4,000. The results were as following; it has generally shown that methane conversion rate increased with the increase of oxygen and carbon dioxide amounts. Highly methane conversion of 92~93% and syngas ratio of approximately 1.0 were obtained in the feed of gas composition flow-rate of 243ml/min of $CH_4$, 241ml/min of $CO_2$, 195ml/min of $O_2$, 48ml/min of $N_2$, and 360ml/min of water, respectively, under reactor pressure of 15 bar for 50 hrs of reaction time. Also, it was shown that catalyst deactivation by coke formation was reduced by excessively adding oxygen and steam as an oxidizer of the methane reforming.

대기용해 시 내화물 도가니의 종류가 가돌리늄(Gadolinium)을 함유한 듀플렉스 스테인레스 강의 미세조직에 미치는 영향 (The Effect of Refractory Crucible on Microstructure of Duplex Stainless Steel Cast with Gadolinium during Air Induction Melting)

  • 안지호;임재한;문병문
    • 한국주조공학회지
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    • 제35권5호
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    • pp.114-119
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    • 2015
  • This paper reports the effect of a refractory crucible type on the microstructure of duplex stainless steel (DSS) cast with the addition of gadolinium using air-induction melting. Grade 4A DSSs with 1 wt% of gadolinium (Gd) were fabricated in various crucibles including alumina ($Al_2O_3$), magnesia (MgO), calcia (CaO) coated with yttria ($Y_2O_3$) and graphite. The standard free energies of the formation of calcium and yttrium oxide were lower than those of gadolinium oxide and other crucible elements based oxide. The yield of Gd in DSS using $Al_2O_3$, MgO, CaO-coated $Y_2O_3$ and graphite was 5, 19, 83 and 96%, respectively. As Gd yield increased, the amount of Gd-based inclusions increased, the size of the inclusions were reduced, and the inclusions became evenly distributed.

Travelin Solvent Floating Zone법에 의한 LaAlO$_3$ 단결정의 성장 및 특성 (Growth and Characterization of LaAlO$_3$ Single Crystals by the Traveling Solvent Floating Zone Method)

  • 정일형;임창성;오근호
    • 한국세라믹학회지
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    • 제35권3호
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    • pp.280-286
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    • 1998
  • LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

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펄스레이저를 이용한 $MgTiO_3$ 박막의 성장과 전기적 및 구조적 특성에 관한 연구

  • 한근조;임왕규;이재찬
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.86-86
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    • 1999
  • 본 연구에서는 마이크로파 유전체 소자로서의 응용 및 절연 산화막으로의 응용을 위해 마이크로파 유전체 세라믹으로 사용되어 온 MgTiO3 물질을 펄스 레이저로 박막을 제조하였다. MgTiO3 는 주로 고주파에서 높은 유전율을 갖고 높은 품질계수 (22.000 at 5 GHz) 혹은 낮은 유전손실을 갖으며 유전특성의 온도 안정성이 우수하여 유전체 세라믹 재료로 응용된다. MgTiO3 박막의 성장은 KrF(파장:248nm) 엑시머 레이저를 이용했으며 공정조건으로 박막의 성장온도는 500-75$0^{\circ}C$, 산소 압력은 10-5-200mTorr, 성장 후 냉각시 산소분위기는 200Torr, 레이저 에너지 밀도는 1.5-5J/cm2 등의 조건으로 박막을 성장하였다. MgTiO3 박막을 여러 가지 기판, 즉 Al2O3(r-plane), Si, Pt 위에 성장시켰으며 기판에 따라 에픽텍셜 혹은 다결정 상태를 갖는 ilmenite 구조로 성장되었다. PLD(Pulsed laser deposition)법에 의해 형성된 MgTiO3 박막을 보면, 우선 Al2O3(r-plane) 기판위에 성장된 경우 $700^{\circ}C$에서 에픽텍셜하게 성장하였으며, Si 기판 위에 성장된 경우 $650^{\circ}C$에서부터 (003)면으로 우선 배향된 단일상의 ilmenite 구조가 형성된다. Ptdnl에 성장된 경우 $600^{\circ}C$에서부터 (003)면으로 우선배향성을 가지며 $650^{\circ}C$에서 결정의 안정화를 이루었으나, MgTiO3 박막은 전기적 특성으로 유전특성 및 유전분산 특성 등이 측정 분석되어 MgTiO3 박막의 고주파 유전체로의 응용에 관한 가능성을 토의하였다.

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CaO-Al2O3계 용융화합물의 물리·화학적 특성에 관한 연구 (Study on Physical and Chemical Properties of CaO-Al2O3 System Melting Compound)

  • 이근재;구자술;김진만;오상윤
    • 콘크리트학회논문집
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    • 제25권2호
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    • pp.209-215
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    • 2013
  • 이 연구에서는 CaO-$Al_2O_3$계 급냉 제강슬래그(RCSS)의 물리 화학적 특성을 분석함으로써 친환경 무기 급결재로 활용방안을 모색하고자 하였다. RCSS의 성상은 섬유상과 구상으로 구별되었으며, 성상별로 CaO와 $Fe_2O_3$ 성분 함량이 반비례 경향을 나타냈다. 또한 CaO 함량이 낮아지고 $Fe_2O_3$ 함량이 증가함에 따라 강열감량은 (-)경향을 보였고 밀도는 증가하였다. 수은압입법에 의한 세공분포는 서냉 제강슬래그(SCSS)에 비해 매우 낮은 수치로 급냉에 의해 내부결함 및 미세기공률이 현저히 줄어든 것을 확인할 수 있었다. 급냉 제강슬래그를 구성하는 주요 광물을 분석하기 위해 XRD, f-CaO 정량, SEM-EDAX 분석을 실시한 결과에서 f-CaO의 존재는 관찰되지 않았으며, 구성성분이 주로 $C_{12}A_7$과 반응성 ${\beta}-C_2S$로 이루어져 있음을 확인할 수 있었다.

무가압소결(無加壓燒結)한 ${\beta}-SiC-ZrB_2$ 복합체(複合體)의 파괴인성(破壞忍性)과 전기전도성(電氣傳導性)에 미치는 기공(氣孔)의 영향 (Effect of Porosity on the Fracture Toughness and Electrical Conductivity of Pressureless Sintered ${\beta}-SiC-ZrB_2$ Composites)

  • 신용덕;권주성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.847-849
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    • 1998
  • The effect of $Al_{2}O_{3}$ additives on the microstructure, mechanical and electrical properties of ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites by pressureless sintering were investigated. The ${\beta}$-SiC+39vol.%$ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_{2}O_{3}$ powder as a liquid forming additives at $1950^{\circ}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and weakly $\alpha$-SiC(4H), $\beta$-SiC(15R) phase. The relative density of composites was lowered by gaseous products of the result of reaction between $\beta$-SiC and $Al_{2}O_{3}$ therefore, porosity was increased with increased $Al_{2}O_{3}$ contents. The fracture toughness of composites was decreased with increased $Al_{2}O_{3}$ contents, and showed the maximum value of $1.4197MPa{\cdot}m^{1/2}$ for composite added with 4wt.% $Al_{2}O_{3}$ additives. The electrical resistivity of ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composite was increased with increased $Al_{2}O_{3}$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature from $25^{\circ}C$ to $700^{\circ}C$.

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SINTERED $Al_{2}O_{3}$-TiC SUBSTRATE FOR THIN FILM MAGNETIC HEAD

  • Nakano, Osamu;Hirayama, Takasi
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 1998년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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    • pp.6-6
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    • 1998
  • In 1957, the first magnetic disk drive compatible with a movable head was introduced as an external file memory device for computer system. Since then, magnetic disks have been improved by increasing the recording density, which has brought about the development of a high performance thin film magnetic head. The thin film magnetic head has a magnetic circuit on a ceramic substrate using IC technology. The physical property of the substrate material is very important because it influences the tribology of head/disk interface and also manufacturing process of the head. $Al_{2}O_{3}$-TiC ceramics, so called ALTIC, is known to be one of the best substrate materials which satisfies this property requirement. Even though the head is not in direct contact with the disk, frequent instantaneous contacts are unavoidable due to its high rotating speed and the close gap between them. This may cause damage in the magnetic recording media and, thus, it is very important that the magnetic head has a good wear resistance. $Al_{2}O_{3}$-TiC ceramics has an excellent tribological property in head/disk interface. Manufacturing process of thin film head is similar to that of IC, which requires extremely smooth and flat surface of the substrate. The substrate must be readily sliced into the heads without chipping. $Al_{2}O_{3}$-TiC ceramics has excellent machineability and mechanical properties. $Al_{2}O_{3}$-TiC ceramics was first developed at Nippon Tungsten Co. as cutting tool materials in 1968, which was further developed to be used as the substrate materials for thin film head in collaboration with Sumitomo Special Metals Co., Ltd. in 1981. Today, we supply more than 60% of the substrates for thin film head market in the world. In this paper, we would like to present the sintering process of $Al_{2}O_{3}$-TiC ceramics and its property in detail.

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Crystal Structures of Ni2$^{2+}$ - and Tl$^+$ - Exchanged Zeolite X, $Ni_{17}Tl_{58}Si_{100}Al_{92}O_{384} and Ni_{12}Tl_{68}Si_{100}Al_{92}O_{384}$

  • 송미경;윤보영;김양
    • Bulletin of the Korean Chemical Society
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    • 제22권2호
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    • pp.164-170
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    • 2001
  • The crystal structures of fully dehydrated Ni2+- and Tl+ -exchanged zeolite X (Ni17Tl58-X, and Ni12Tl68-X; X=Si100Al92O384) have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C$ (a=24.380(4) $\AA$, 24.660(4) $\AA$, respectively). Their structures have been refined to the final error indices R1=0.037 and R2=0.043 with 485 reflections, and R1=0.039 and R2=0.040 with 306 reflections, respectively, for which I >36(I). In Ni17Tl58-X, 17 Ni2+ ions per unit cell were found at only two sites: 15 at site I at the center of the hexagonal prism (Ni-O=2.203(9) $\AA)$ and the remaining 2 at site II near single six-oxygen rings in the supercage (Ni-O=2.16(3) $\AA).$ Fifty-eight Tl+ ions were found at five crystallographic sites: 28 at site II (Tl-O=2.626(8) $\AA)$, 2 at site I' in the sodalite cavity near the hexagonal prism (Tl-O=2.85(1) $\AA)$, another 2 at site II' in the sodalite cavity (Tl-O=2.77(1) $\AA).$ The remaining 26 were found at two nonequivalent Ⅲ' sites with occupancies of 23 and 3. In Ni12Tl68-X, 12 Ni2+ ions per unit cell were found at two sites: 10 at site I (Ni-O=2.37(2) $\AA)$ and the remaining 2 at site II (Ni-O=2.13(2) $\AA).$ Sixty-eight Tl+ ions were found at five crystallographic sites: 28 at site II (Tl-O=2.63(1) $\AA)$, 12 at site I' (Tl-O=2.62(1) $\AA)$, 2 at site II' (Tl-O=3.01(2) $\AA)$, and the remaining 26 at two III' sites with occupancies of 23 and 3. It appears that Ni 2+ ions prefer to occupy site I and II, in that order. The large Tl+ ions occupy the remaining sites, I', II, II' and two different III' sites. In both crystals, only the Ni2+ ions at site II were reduced and migrated to the external surface of zeolite X when these crystals were treated with hydrogen gas.

플랙시블 염료태양전지 특성에 미치는 ZnO 및 ITO의 영향 (Some properties on Conversion Efficiency of Flexible Film-Typed DSCs with ZnO:Al and ITO Transparent Conducting layers)

  • 김지훈;추영배;성열문;곽동주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1096_1097
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    • 2009
  • Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

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