• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.120-121
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• 2006

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. Al sputtering process of ZnO thin films substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5N. The ZnO thin films were in-situ annealed at $600^{\circ}C$, $800^{\circ}C$ in $O_2$ atmosphere. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5{\times}10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAS_2$. Those diffusion was perform at $650^{\circ}C$ during 3hr. We confirmed that p-type properties of ZnO thin films were concerned with dopant sources rather than diffusion temperature.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.155-159
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• 2007

Blue light-emitting phosphors having the excitation spectrum range of the medium-long ultraviolet ($280nm{\sim}400nm$) have been prepared by solid state reaction method. As a starting material the natural alkaline feldspar powder produced from the domestic mine field in Buyeo, Chungnam-do. The photoluminescence characteristics and crystal structures have been analyzed for the phosphor samples. The powder mixture of the natural alkaline feldspar and the rare-earth oxide was calcined at $800{\sim}1000^{\circ}C\;for\;3{\sim}4h$ in air. The calcined samples we fully ground at room temperature and then heat-treated in the mild reducing gas atmosphere of $5%H_2-95%N_2$ mixture at $1100{\sim}1150^{\circ}C\;for\;3{\sim}4h$. The natural alkaline feldspar material consists of the monoclinic orthoclase ($KAlSi_3O_8$) and the triclinic albite ($NaAlSi_3O_8$) phases. At the $0.5wt%Eu_2O_3$ addition the PL spectrum showed the maximum intensity and with further increase of $Eu_2O_3$ the PL intensity decreased. The albite phase disappeared in the $Eu_2O_3$ doped phosphors. The effect of the co-doped activator on the PL characteristics have been also discussed.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.620-626
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• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Korean Chemical Engineering Research
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• v.55 no.6
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• pp.861-867
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• 2017

In order to improve the capacity and cycling stability of Ni-rich NCA cathode materials for lithium ion batteries, the boron and cobalt were doped in commercial $Li_{1.06}Ni_{0.91}Co_{0.08}Al_{0.01}O_2$ (NCA) powders. Commercial NCA particles are mixed composites such as secondary particles of about $5{\mu}m$ and $12{\mu}m$, and the particle size was decreased by doping boron and cobalt. The initial discharge capacities of the boron and cobalt doped NCA-B and NCA-Co were found to be 214 mAh/g and 200 mAh/g, respectively, which are higher values than that of the raw NCA cathode material. In particular, NCA-Co exhibits the best discharge capacity of 157 mAh/g after 20 cycles, which is probably due to the enhanced diffusion of lithium ion by crystal growth along with the c-axis direction.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.444-449
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• 2010

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline $Si_3N_4$ ceramics were affected by the density, ${\alpha}:{\beta}$-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of $\alpha-Si_3N_4$, AlN, MgO, and h-BN at $1850^{\circ}C$. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped $Si_3N_4$ ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.449-449
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• 2010

유기발광소자(organic light-emitting diodes, OLEDs)는 저공정비용, 경량화, 가용성 및 대면적화 등의 장점으로 조명 분야와 디스플레이 분야로의 응용 가능성으로 인해 크게 주목을 받아 왔다. 이러한 OLED 소자의 고효율, 고휘도 및 저소비전력 등을 구현하기 위해서는 전극으로부터 전하 주입 층으로 효율적인 전하 주입이 요구된다. 즉, 각 전극의 폐르미 준위로부터 전하 전도준위대로의 전하주입 장벽이 없어야 한다. 본 연구에서는 홀 주입장벽이 없는 정공주입 층으로 $MoO_x$(molybdenum oxide)가 도핑된 NPB(N, N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) 층을 사용하여 hole-only 소자를 제작하고 전류-전압 특성을 통해 양극으로부터 홀주입 층으로의 hole-ohmic 특성을 고찰했다. 또한, 전자 주입장벽이 없는 전자주입 층으로 $C_{60}$(fullerene)/LiF(lithum fluoride)의 이종 층을 사용하여 electron-only 소자를 제작하고 음극으로부터 전자주입 층으로의 전자 ohmic 특성을 조사했다. 또한, 전극으로부터 전하주입 층으로 ohmic 특성을 더 자세히 이해하기 위하여 전하주입 층의 자외선 광방출 스펙트럼(ultraviolet photoemission spectra)을 조사했다. 한편, glass/ITO/$MoO_x$-doped NPB (x%: x=0,25, 50 및 75; 5nm)/NPB (63nm)/$Alq_3$ (37nm)/$C_{60}$ (5nm)/LiF (1nm)/Al (100nm)로 구성된 all-ohmic OLED 소자의 발광특성은 $MoO_x$의 도핑 농도가 25%이상일 때 최적의 특성을 보여줬다. 이러한 현상은 정공주입 층에서 p형 도핑 농도의 증가에 따른 정공 농도의 증가에 기인한다. 또한 $MoO_x$의 도핑 농도의 증가에 따라 정공주입 층의 new gap state와 전극의 페르미 준위의 pinning에 기인한다. 25%의 $MoO_x$을 가진 OLED소자는 7.2V의 낮은 전압에서 $58300 cd/m^2$의 높은 휘도를 보여줬다.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.77-84
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• 2005

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.