• 한국세라믹학회지
• /
• 제37권2호
• /
• pp.117-121
• /
• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.

• Bulletin of the Korean Chemical Society
• /
• 제31권12호
• /
• pp.3723-3729
• /
• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
• /
• pp.69-72
• /
• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.581-584
• /
• 2003

The austenitic STS 304 stainless steel was turned to clarify the effects of tool geometry on the tool wear. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, exhibiting larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN-TiCN-TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with large approach angle showed the longest tool life of all tools used in this tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of 15$^{\circ}$became smaller than with that of -5$^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• 한국정밀공학회지
• /
• 제20권10호
• /
• pp.56-64
• /
• 2003

The effect of tool geometry on the tool wear in turning the austenitic stainless steel, STS 304 was investigated. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, showing larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN- TiCN- TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with the larger side cutting edge angle showed the smallest tool wear in all tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of $15^{\circ}$ became smaller than with that of $-5^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• 한국재료학회지
• /
• 제20권9호
• /
• pp.451-456
• /
• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• 한국세라믹학회지
• /
• 제35권7호
• /
• pp.685-690
• /
• 1998

Al2O3에 대한 용융 Al의 자발적 침윤 기구를 밝히기 위하여 순수한 Al 및 Al-(Si)-Mg 합금의 Al2O3에 대한 wet-ting angle과 침윤 특성을 진공, 아르곤, 그리고 질소분위기에서 관찰하였다. Al2O3에 대한 용융 Al 및 Al 합금의 wetting은 진공 분위기에서만 이루어졌으나, Al2O3에 대한 용융 Al 합금의 자발적 침윤은 질소 분위기하 Al 합금에 합금 원소로써 Mg가 함유되었을 때에 일어났다. Al2O3에 대한 용융 Al 및 Al 합금의 wettability와 자발적 침윤 특성의 차이는 Al2O3 표면에 형성되는 Mg-N화합물에 직접적인 영향을 받는 것으로 나타났다. Al2O3 입자 표면에 얇게 형성되는 Mg와 질소의 화합물 즉, Mg3N2가 Al2O3에 대한 용윤 Al 합금의 wettability를 향상시켜 $700^{\circ}C$의 온도에서도 Al 합금의 자발적 침윤이 가능하여 Al/Al2O3 복합재료를 무가압 상태에서 제조할 수 있었다.

• 대한전자공학회논문지
• /
• 제21권6호
• /
• pp.64-69
• /
• 1984

Al-MIS(p-Si)태양전지의 최대 효율은 Al 박막을 0.6A/sec 이하의 속도로 증착시켜 80Å인 두께가 되었을 때임을 알았다. ZnS와 SiO로 AR coating을 했는데, 단층 피막일때는 각각 570Å과 690Å인 박막 두께에서 최대 Isc를 나타냈다. 이는 quarter-coating 조건인 n1d1=λ/4를 만족함을 알았다. 이중층 피막일 때는 한 층을 단층 피막때의 최적 두께를 유지하면서 다른 한 층을 조절했다. 이때의 최대 Isc는 단층피막일 때와 비슷한 값이었으나 넓은 범위의 두께에서 그 값이 그대로 유지되었다. 한편 dzns/ds10=1.9/2.3=570/690인 관계를 유지하면서 총 두께를 각각의 단층피막때의 최적 두께 합에 대해서 70∼90%로 얇게 했을 때 앞에서 논의한 어떤 경우보다도 20%이상의 더 높은 Isc를 얻을 수 있었다 따라서 높은 효율을 얻으면서 정밀한 두께 조절이 불필요한 새로운 AR coating방법을 얻었다.

• 센서학회지
• /
• 제19권5호
• /
• pp.337-341
• /
• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• 한국전기전자재료학회논문지
• /
• 제28권6호
• /
• pp.365-370
• /
• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.