• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.236-236
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• 2010

알루미늄 자체에 대한 질화 기술의 어려움 때문에 현재까지는 AlN 분말을 이용한 소결 공정을 통하여 주요 부품의 제작이 되어 왔으며. Al 질화 기술보다는 아노다이징과 같은 표면 산화 공정 또는 도금과 같은 기술이 선호되어 왔다. 알루미늄 질화 기술이 잘 사용되지 않았던 이유는 알루미늄 표면에 2 5 nm 두께로 존재하는 치밀한 산화층의 높은 안정성 때문에 질화반응이 어렵기 때문이다. 이 알루미늄 산화물의 안정성은 질화물에 비교하여 5 배까지 높으며, 이런 경향은 온도가 높아짐에 따라 더욱 커지기 때문이다. 특히, 알루미늄의 낮은 기계적 물성을 향상시키기 위해서는 충분히 깊은 두께로 형성되어야 할 필요성이 높으나 알루미늄에 대한 질소의 고용도가 거의 없고 확산 계수가 매우 낮기 때문에 충분히 두꺼운 질화층의 형성이 어렵기 때문이다. 결국, 알루미늄 질화가 가능하기 위해서는 표면의 산화층을 없애야 하며, 알루미늄이 AlN이 되려는 속도는 $Al_2O_3$를 만드려는 속도보다 매우 느리므로, 잔존 산소량을 최소화 할 필요성이 있어서 고진공 분위기에서 처리되어야 한다. 일반적으로 알루미늄 질화를 위해서는 $10^{-6}\;torr$ 이하의 고진공도의 챔버가 필요하며 고순도의 반응 가스를 사용하여야 한다. 그러나 이러한 고진공하에서는 낮은 이온밀도 때문에 신속질화가 기존의 공정시간인 20시간동안, AlN층이 5um이하로 형성되었다. 본 연구에서, 알루미늄의 질화에 있어서, 표면층에 높은 전류를 걸어주어, 용융상태로 만들어주는 것이 좋다는 연구 결과를 얻었으며, 이를 토대로 신속질화를 위하여 전류밀도(전력량)에 따라 알루미늄 질화층의 형성 정도를 연구하였다. SEM, EDS, XRD등을 통해 Al의 표면에 플라즈마 질화를 통해 Al에 질소의 함유량이 증가하는 것을 확인하였으며 광학현미경을 통해 질화층의 두께와 표면조직을 확인하였다. Al 시편의 표면을 효과적으로 활성화할 수 있는 $400^{\circ}C$ 이상의 온도에서 전류밀도(전력량)와 시간의 변화에 따라 질화층이 효과적으로 형성되는 조건과 시간에 따라 두께가 증가하는 경향을 확인할 수 있었다. 이러한 신속 질화 공정을 통해 2시간 이내의 질화를 통해 40um이상의 AlN층을 형성할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.107-107
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• 1999

• 한국세라믹학회지
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• 제42권2호
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• pp.88-93
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• 2005

아크 이온 플레이팅과 스퍼터로 구성된 하이브리드 시스템을 이용하여 다성분계 Ti-Al-Si-N 코팅막을 WC-Co 기판에 증착하였다. 증착시 Si 함량을 변화시켜 코팅막의 마모특성에 Si 함량이 미치는 영향에 대하여 조사하였다. 마모 특성을 관찰하기 위하여 Ti-Al-Si-N 코팅막이 증착된 WC-Co 원판에 3N의 하중, 0.1 m/s의 속도로 볼 온 디스크(ball-on-disk) 형태의 마모시험기를 이용하여 건식 마모 실험을 하였다. 상대재로는 스틸볼과 지르코니아볼을 사용하였다. 상대재가 스틸볼의 경우 Ti-Al-Si-N 코팅막의 마찰계수가 Ti-Al-N 코팅막의 마찰계수보다 낮게 나타났다 이는 Si가 첨가되어 마모시 상대재와 코팅막 사이에 자기윤활효과(self-lubricant effect)에 의한 것으로 여겨진다. 코팅막과 스틸볼 사이에 응착 마모 거동을 보였으며, Si의 함량이 증가함에 따라 마찰계수는 감소하였다. 한편, 상대재가 지르코니아 볼의 경우 코팅막과 지르코니아 볼 사이에서 연삭마모 거동이 더 지배적이었고, Si 함량이 증가할수록 마찰계수는 증가하였다.

• 한국표면공학회지
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• 제29권1호
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• pp.45-59
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• 1996

Ultrafine powders(UFPs) of aluminum nitride(AlN) have been synthesized by chemical reactions in the nitrogen atmosphere and the gaseous aluminum evaporated from Al powders in thermal plasmas produced by a DC plasma torch. A synthesis system consisting of a plasma torch, a finely-controllable powder feeder, a reaction chamber, and a quenching-collection chamber have been designed and manufactured, and a filter for gathering AlN UFPs produced by the quenching process subsequent to the synthesis is set up. The synthesis process is interpreted by numerical analyses of the plasma-particle interaction and the chemical equilibrium state, respectively, and a fully-saturated fractional factorial test is used to find the optimum process conditions. The degrees and ultrafineness of synthesis are evaluated by means of SEM, TEM, XRD, and ESCA analyses. AlN UFPs synthesized in the optimum process conditions have polygonal shapes of the size of 5-100 nm, and their purities differ depending on collecting positions and filter types, and the maximum purity obtained is 72 wt% at the filter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• 한국세라믹학회지
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• 제47권6호
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• pp.566-571
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• 2010

Dispersion behavior of the slurries consisted of bimodal-type AlN powders was examined in non-aqueous solvent system. Azotropic solvent system and copolymer acidic dispersant were applied to the slurries. Measurements of the sedimentation height and the viscosity of the each slurry, and the test of particle size distribution of the each powder sample were conducted as examinations for the dispersion behavior at the various dispersant contents. The bimodal-type particle size distribution was continued after addition of the dispersant and small particle portions were increased as the dispersant content increases. The density of the green sheet was also increased as the dispersant content increases and a green density of $2.114\;g/cm^3$ was obtained at the sample prepared from 2.4 wt% dispersant content. The increase of large particle portions resulted in the surface defects of the green sheets.

• 한국진공학회지
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• 제6권S1호
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• pp.122-126
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• 1997

the Cu/polyimide system is known to be the best candidate for a multilevel interconnection system due to the low resistance of Cu and to the low dielectric constant of polyimide respectively. Ion beam mixing of Cu(40nm)/polyimide was carried out at room temperature with 80 keV Ar+ and N2+ form $1.5\times$1015 to 15$\times$1015 ions/cm2. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy and x-ray emission spectrocopy are employed to investigate the chemical bonds and the interlayer compound formation of the films Cu/Al/polyimide showed more adhesion strength than Cu/polyimide after ion beam mixing and N2+ ions are more effective in the adhesion enhancement than Ar+ with the same sample geometry. The XES results shows the formation of interlayer compound of CuAl2O4 which can reflect more adhesive Cu/Al/polyimide which has not been reported previously. The latter results is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety whcih are known as adhesion promotors.

• 한국재료학회지
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• 제14권8호
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• pp.529-534
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• 2004

$Sr_{4}Al_{14}O_{25}$ was synthesized by solid state reaction with flux. $H_{3}BO_3$ was used to synthesize $SrO-Al_{2}O_{3}$ phosphor system as a flux. The effect of doping system such as Eu+Dy, Eu, and Ce on the luminescent properties of $Sr_{4}Al_{14}O_{25}$ was investigated. Both PL spectra of $Sr_{4}Al_{14}O_{25}$:Eu and $Sr_{4}Al_{14}O_{25}$:Eu+Dy excited at 390 nm showed greenish-blue emission at about 490 nm, while the emission wavelength was shifted to 400 nm by doping Ce. The reduction of $Eu^{3+}$ ions to $Eu^{2+}$ could be accomplished by the annealing process under $N_{2}^{+}$ vacuum atmosphere, and attributed to the emission at 490 nm. It is verified that $Sr_{4}Al_{14}O_{25}$:Eu phosphor is suitable for white LEDs became of a broad absorption band peaking at 390 nm.

• 한국세라믹학회지
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• 제27권7호
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• pp.916-924
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• 1990

The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

• 한국세라믹학회지
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• 제30권11호
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• pp.941-948
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• 1993

The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3＋CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.