• 한국분말재료학회지
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• 제11권4호
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• pp.294-300
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• 2004

This study for preparation of aluminum nitride (AlN) with high purity was carried out by self-propagating high-temperature synthesis method in two different systems, $Al-N_{2}$ and $Al-N_{2}$-AlN, with the change of nitrogen gas pressure and dilution factor. On the occasion of $Al-N_{2}$ system, unreacted aluminum was detected in the product in spite of high nitrogen pressure, 10 MPa, This may be caused by obstructing nitrogen gas flow to inner part of molten and agglomerate of aluminum, formed in pre-heating zone. In $Al-N_{2}$-AlN system, AlN with a purity of 95% or ever can be prepared in the condition of $f_{Dil}\geq0.5$, $P_{N_{2}}\geq$ 1 MPa, and the purity can be elevated to 98% over in the condition of $f_{Dil}$ = 0.7 and $P_{N_{2}}$ = 10 MPa.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국세라믹학회지
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• 제43권7호
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• pp.445-450
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• 2006

The preparation of AlN powder by SHS in the system of $Al-AlN-NH_4Cl$ was investigated in this study. In the preparation of AlN powder, the effect of gas pressure and the composition such as Al, AlF, and additive in mixture on the reactivity were investigated. At 60 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure AlN was 35 wt%Al+5 wt% $NH_4Cl+60wt%$AlN. The AlN powder synthesized in this condition was a single phase AlN with a whisker morphology.

• 한국표면공학회지
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• 제36권2호
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• 한국표면공학회지
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• 제46권6호
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• pp.242-247
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• 2013

Zr-Al-N coatings were synthesized by the hybrid coating system combining arc ion plating and DC magnetron sputtering from a Zr and an Al target in argon-nitrogen atmosphere, respectively. By changing the power applied on the Al cathodes, the Zr-Al-N coatings with various Al contents were deposited. The microstructure and chemical compositions of the Zr-Al-N coatings were studied by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM). With increasing of Al content in the coatings, the solid solution (Zr, Al)N crystallites were observed in the Zr-Al-N coatings. The nanohardness of the Zr-Al-N coatings exhibited a maximum value of 42 GPa for the Zr-Al (7.9 at.%)-N, and decreased with further increase in Al content in the coatings. The oxidation and corrosion behavior of the Zr-Al-N coatings revealed better properties compared than those of ZrN coatings due to the formation of a solid solution.

• 한국세라믹학회지
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• 제26권1호
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.972-978
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• 2001

Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

• 한국세라믹학회지
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• 제26권1호
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• pp.100-108
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• 1989

Aluminum hydroxides were prepared by the alkoxide hydrolysis method using Al-isopropoxide as a starting material and NH4OH as a catalytic agent. When Al-isopropoxide was hydrolyzed in a H2O-NH3 system, only Al(OH)3 was obtained over all pH values. However, AlOOH was formed besides Al(OH)3 when Al-isopropoxide was hydrolyzed in a H2O-NH3-isopropyl alcohol system. The AlOOH/Al(OH)3 ratio was increased as the isopropyl alcohol content was increased. The hydroxides, Al(OH)3 and AlOOH, obtained in this study and the commerical products, $\alpha$-Al2O3 and AlOOH were subjected to the carbothermal reduction and nitridation reaction to product AlN powder, using carbon black as a reducing agent under N2 atmosphere at various temperatures. AlN was synthesized from the obtained Al(OH)3 and the commercial AlOOH at 145$0^{\circ}C$, however, synthesized from the obtained AlOOH and the commercial alpha-alumina at 135$0^{\circ}C$. The temperature difference is assumed to be attributed to the reactivity of those powders. AlN powder prepared from the Al-isopropoxide was observed to have the narrower particle size distribution than that prepared from the commercial $\alpha$-Al2O3 or AlOOH.

• 한국진공학회지
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• 제14권4호
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• pp.201-206
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• 2005

본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 방법으로 Si 위에 GaN/AIN/Al/Si 구조를 제작하고, AlN 버퍼층의 두께에 따른 광학적 특성을 조사함으로써 효과적인 eaN 성장을 위한HVPE에서의 공정 방법을 개선하고자 하였다. 이를 위해 Al을 증착한 Si 기판과 그렇지 않은 경우를 PL측정을 통해 그 효과를 관찰하였고, $5{\AA}$ 두께의 Al 대해 AlN 버퍼층의 두께를 변화시켜가면서 GaN를 성장시켜 그 특성을 조사하였다. Al을 증착한 경우가 증착하지 않은 경우에 비해 광학적 특성이 우수한 것으로 나타났으며, AlN의 두께 변화에 대해서는 양질의 GaN를 얻기 위한 최적의 두께는 약 $260{\AA}$ 인 것으로 나타났다. 이 경우 SEM을 이용한 표면사진에서 GaN의 초기성장이 hexagonal형태로 성장되고 있음을 관찰할 수 있었다. 또한 XRD의 회절 패턴은 GaN가 {0001} 방향으로 우선 배향성을 가지고 성장되고 있음을 보여주고 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.128-129
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• 2007

Cr-Al-N, Cr-Si-N 그리고 Cr-Al-Si-N 코팅막을 WC-Co 모재위에 AIP법과 DC 마그네트론 스퍼터링 법을 결합한 하이브리드 시스템을 이용하여 합성하였으며, Si함량에 따른 Cr-Al-Si-N 코팅막의 미세구조, 기계적 특성과 마찰 거동에 관해 비교 연구하였다. Cr-Si-N(${\sim}35GPa$)과 Cr-Al-Si-N(${\sim}55GPa$) 코팅막의 경도값은 CrN(${\sim}23GPa$)과 Cr-Al-N(${\sim}25GPa$) 코팅막과 비교하여 각각 증가하였고, CrN(${\sim}0.50$)과 Cr-Al-N(${\sim}0.84$)의 평균 마찰계수는 Si 함량이 9 at.% 일때, Cr-Si-N(${\sim}0.30$)과 Cr-Al-Si-N(${\sim}0.57$)으로 각각 감소하였다.