• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.251-251
• /
• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.8 no.4
• /
• pp.382-389
• /
• 1997

We present the results on the applicability of the polycrystalline AIN thin films for a surface acoustic wave filter operating at 800 MHz frequency. The films show the FWHM of 3 .deg. from th X-ray rocking curve, which indicates that the c-axis of the films is pre- ferentially oriented along the growth direction. The fabricated band pass filters exhibit the center frequency of 865 MHz with 3dB band-width of 45 MHz. From the measured frequency response, the electro-mechanical coupling constant of 0.8% and the SAW velocity of 5,709 m/s are obtained. Thus, we conclude that the sputtered AIN films are feasible for the fabrication of uper UHF band SAW filters.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.473-473
• /
• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.205-210
• /
• 2002

The HPS(High Porosity Support, 39.3%) and the LPS( Low Porosity Support, 18.7%) were fabricated to investigate the phase transformation and the chance of microstructure with porosity of alumina support. Alumina sol was made using aluminum tri-sec $butoxide(ATSB,\; Al(O-Bu)_3)$, the membrane on porous support with different porosity and the membrane without support were fabricated. The $\theta$-to ${\alpha}-A1_2O_3$ phase transformation in the membranes was investigated using thin film X-ray diffraction (XRD), and the change of microstructure was observed using scanning electron microscopy(SEM). XRD patterns showed that the membrane on LPS and HPS had 10$0^{\circ}C$, 5$0^{\circ}C$ higher $\theta$-to ${\alpha}-A1_2O_3$ transformation temperature compared to the unsupported membrane. A similar effect was also observed in microstructure of the membranes, theoritical temperature difference were 97$^{\circ}C$ and 44$^{\circ}C$ by Crapeyron equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.43-44
• /
• 2008

PECVD 방식에 의거 low-k 유전상수를 갖는 층간 절연막 (ILD)를 제작하였다. 전구체 BTMSM 액체를 기화하여 16sccm 에서부터 1 sccm씩 증가하면서 25sccm 까지 p-Si[100] 기판위에 유량비를 조절하였으며 60 sccm으로 일정산소 $O_2$ 가스를 반응 챔버에 도달하도록 하였다. 제작된 시편의 구성성분은 FTIR의 흡수선으로 확인하였고, 알루미늄 전극을 구현한 MIS (Al/SiOCH/p-si(100)) 구조의 커패시터를 가지고 정전용량-전압 (C-V) 특성을 측정하여 유전상수를 계산하였다. BTMSM/$O_2$에 의한 층간절연막의 k ~ 2 근방의 저유전상수는 유량비에 민감하게 의존되고 열처리에 의하여 $CH_3$의 소멸 및 Si-O-Si(C) 성장하는 효과에 의하여 더 낮아짐을 확인할 수 있었다. 또한 상온 및 대기압에서 공기 중에 노출시켜 자연 산화과정을 겪은 시편들의 유전상수는 전체적으로 증가하였지만, 열처리한 박막이 상대적으로 안정화된 것을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.840-846
• /
• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Advances in materials Research
• /
• v.1 no.1
• /
• pp.93-107
• /
• 2012

Epoxy resin is widely used in high voltage apparatus as insulation. Fillers are often added to epoxy resin to enhance its mechanical, thermal and chemical properties. The addition of fillers can deteriorate electrical performance. With the new development in nanotechnology, it has been widely anticipated that the combination of nanoparticles with traditional resin systems may create nanocomposite materials with enhanced electrical, thermal and mechanical properties. In the present paper we have carried out a comparative study on dielectric properties, space charge and dielectric breakdown behavior of epoxy resin/nanocomposites with nano-fillers of $SiO_2$ and $Al_2O_3$. The epoxy resin (LY556), commonly used in power apparatus was used to investigate the dielectric behavior of epoxy resin/nanocomposites with different filler concentrations. The epoxy resin/nanocomposite thin film samples were prepared and tests were carried out to measure their dielectric permittivity and tan delta value in a frequency range of 1 Hz - 1 MHz. The space charge behaviors were also observed by using the pulse electroacoustic (PEA) technique. In addition, traditional epoxy resin/microcomposites were also prepared and tested and the test results were compared with those obtained from epoxy resin/nanocomposites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.6
• /
• pp.568-573
• /
• 2006

We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.20-24
• /
• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.1
• /
• pp.80-84
• /
• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.