• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.643-650
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• 1993

NdAl3(BO3)4 have been developed for miniature solid state laser material. Single crystals of NdAl3(BO3)4 were grown by TSSG technique using BaB4O7 flux. The effects of growth conditions such as cooling rate, seed orientation and rotation speed on crystal quality and the morphology were studied. At the cooling rate of 2.4$^{\circ}C$/day and the crystal rotation speed of 30~40rpm with the seed orientation in <201> or <100> directions, transparent and light violet colored crystals in size of 10$\times$15$\times$20㎣ with well developed {010}, {111}, {111}, {021}, {001}, {102}, {112}, {021} faces were obtained. By X-ray diffraction analysis, the space group was determined as C2/c, and the X-ray powder data was obtained.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.177-182
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• 2000

The effects of betatizing and aging temperatures on the martensitic transformation characteristics in an Cu-13.4wt%Al-4.2wt%Ni single crystal have been studied. Microstructures show that the specimen betatized above $800^{\circ}C$ has only ${{\beta}_1}^{\prime}$ martensite while the specimen betatized of below $700^{\circ}C$ has two phases i.e., ${{\beta}_1}^{\prime}+{\gamma}_2$ When betatizing temperature increase from $600^{\circ}C$ upto $900^{\circ}C$, Ms and As temperatures decrease due to the dissolution of which ${\gamma}_2$ phase depletes Al content in the matrix thereafter makes the both Ms and As temperatures significantly increased. Ms and As temperatures of the specimen aged at $200^{\circ}C$ are relatively stable but those of the specimen aged at $300^{\circ}C$ are shifted rapidly with aging time, especially within the first 30min.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.1
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• pp.24-31
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• 2019

The current study demonstrates an efficient procedure to create ingots from $Al_2O_3$ powder using the skull melting method to use these ingots as a starting material in conventional methods for growing synthetic single-crystal sapphire. Dimension of the cold crucible was 24 cm in inner diameter and 30 cm in inner height, 15 kg of $Al_2O_3$ powder was completely melted within 1 h at an oscillation frequency of 2.75 MHz, maintained in the molten state for 3 h, and finally air-cooled. The areal density and components of the cooled ingot by parts were analyzed through scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDS). The areal density and $Al_2O_3$ content of the ingot were related to the temperature distribution inside the cold crucible during high-frequency induction heating, and the area with high temperature was high tends to be high in areal density and purity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.327-333
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• 1999

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina bi-crystal had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press. The morphological change and the growth od crystals formed by heat treatment in Ca doped high purity single crystal alumina, were observed using optical microscopy. The dot was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO . $6Al_2O_3$, were observed on the inner surface of 100ppm Ca implanted specimen after 1 hour heat treatment at $1,500^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at $1,600^{\circ}C$. This disappearance means that there should be little increase of Ca solubility limit to alumina and/or changes of diffusion coefficient of Ca in alumina around this temperature.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.34-42
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• 1996

Growth of synthetic emerald [($(BeO)_3(Al_{2-x}Cr_xO_3)(SiO_2)_6$] single crystals was carried out by flux method. In this study, the starting materials were prepared by stoichiometric mixing of BeO, $Al_2O_3$ and $SiO_2$ as reaching components. The conditions for the growth of synthetic emerald single crystals are as follows : temperature range ; $1150{\sim}900^{\circ}C$, cooling rate ; 2, 4, $10^{\circ}C/hr$, flux ; $Li_2CO_3$, $V_2O_5$, dopant ; $Cr_2O_3$. The sizes of $Cr_2O_3$emerald single crystals depending on 2, 4, $10^{\circ}C/hr$ cooling rates. The obtained emerald single crystal was characterized and the following results were obtained : lattice parameter : a=0.921nm, c=0.917nm, crystal system ; hexagonal, crystal size ; max. $0.80{\times}0.95mm^2(c{\times}m)$, orientation ; (1000), $m(10{\bar{1}}0)$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.5
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• pp.1096-1105
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• 1994

A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of automobile because of high-resistance and good strength. In this study, the cutting of hypereutectic A1-Si alloy for economical production was investigated by simulation. Tool life and the extraction rate of Si particles is inversely proportional to the depth of cut. When decreasing the depth of cut, the reduction of single crystal diamond tool cost and tool change time is achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.44-55
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• 1996

Emerald (3BeO{\cdot}Al$_{2}$O_{3}{\cdot}6SiO_2 : Cr^{3+}$) single crystals were grown by flux method of $Li_2O-MoO_3 - V_2O_5$ system. The composition of starting materials were 1, 3, 5 mole ratio of $MoO_3 - V_2O_5/$Li_2O$, 20 - 15% of emerald content to flux composition and 1% of $Cr_2O_3$ colordopant to emerald composition. After mixing those were melted at $1100^{\circ}C$ in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of $3^{\circ}C$/hr from $1100^{\circ}C$ to $650^{\circ}C$, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at $1050 ~ 950^{\circ}C$, in 3 mole ratio of $V_2O_5 - MoO_3/Li_2O$ flux. Emerald single crystal growing effect and $Cr_{+3}$ ion of substitutional solid solution effect for $Al_{+3}$ ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.111-115
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• 2015

$Er^{3+}$ doped $Y_3Al_5O_{12}$ (Er:YAG) single crystals, in which the concentrations of $Er^{3+}$ ion were 5, 7.3, 8, and 10 at.%, were grown by the Czochralski method under nitrogen atmosphere. The <111> oriented Er:YAG single crystals with diameters of up to 50 mm were grown at a pulling rate of 1.0 mm/h and rotation rate of 10 rpm. The thick part of the core region was generated mainly when there was a diameter change during the crystal growth. The concentrations of $Er^{3+}$ ion in the crystals were the same as it was in the melt. $Er^{3+}$ concentration of core region was slightly higher than the other regions in the compositional analysis. The fluorescence lifetime was saturated according to the increase of $Er^{3+}$ doping concentrations.