• Journal of Electrochemical Science and Technology
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• v.3 no.1
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• pp.29-34
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• 2012

The structural changes of $Li_{1-x}Ni_{0.5}Co_{0.2}Mn_{0.3}O_2$ cathode material for lithium ion battery during the first charge was investigated in comparison with $Li_{1-x}Ni_{0.8}Co_{0.15}Al_{0.05}O_2$ using a synchrotron based in situ X-ray diffraction technique. The structural changes of these two cathode materials show similar trend during first charge: an expansion along the c-axis of the unit cell with contractions along the a- and b-axis during the early stage of charge and a major contraction along the c-axis with slight expansions along the a- and b-axis near the end of charge at high voltage limit. In $Li_{1-x}Ni_{0.5}Co_{0.2}Mn_{0.3}O_2$ cathode, however, the initial unit cell volume of H2 phase is bigger than that of H1 phase since the c-axis undergo large expansion while a- and b- axis shrink slightly. The change in the unit cell volume for $Li_{1-x}Ni_{0.5}Co_{0.2}Mn_{0.3}O_2$ during charge is smaller than that of $Li_{1-x}Ni_{0.8}Co_{0.15}Al_{0.05}O_2$. This smaller change in unit cell volume may give the $Li_{1-x}Ni_{0.5}Co_{0.2}Mn_{0.3}O_2$ cathode material a better structural reversibility for a long cycling life.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1736-1738
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• 2000

ITO/TPD($450{\AA}$)/$Alq_{3}(500{\AA})$/Al:Li($1200{\AA}$) 구조의 유기 LED를 제작하였다. Al과 Al:Li(0.lwt%), Al:Li(1wt%), Al:Li(5wt %) 합금을 음전극으로 증착시켜 소자의 전기적 광학적 특성을 분석하였다. 음전극 내의 Li의 분포를 알아보기 위하여 SIMS(Secondary ion Mass Spectroscopy) depth profiling을 하였다. Al:Li합금에서 Li의 함량이 0.1 wt %에서 5 wt %로 증가함에 따라 소자의 turn-on voltage는 약 3.5 V에서 3 V로 감소하였고, 구동전압도 감소하였다. 200$cd/m^2$의 휘도를 기준으로 Al:Li(0.1wt %) 합금을 사용한 소자의 경우 3.5 lm/W로 발광효율이 최대였다. 증착된 Al:Li(0.1wt%) 합금의 SIMS depth profiling 결과 초기에만 Al:Li이 증착되어 Al:Li/Al의 두 층이 형성되었고, Al:Li 합금층의 두께는 약 120${\AA}$ 이었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.145.1-145.1
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• 2014

변형된 end-Hall type의 이온 소스를 사용하여 이온 소스의 형태에 따라 달라지는 이온 빔의 변화를 측정하였다. 이온 소스 cathode의 wehnelt mask를 세 가지 종류로 제작하였으며, 생성된 이온 빔을 이용하여 Al이 sputter 방식으로 증착된 유리 기판을 etching 하였다. 실험 결과 wehnelt mask의 모양에 따라 focus, broad, strate의 형태로 이온 빔이 생성되는 것을 확인하였다. Al이 증착된 유리 기판의 제작을 위하여 Al target을 사용하여 RF power로 150 W, 2분간 sputtering을 하였고, 이온 소스와 기판사이의 거리를 1 cm씩 증가시켜가며 이온 빔을 2,500 V로 3분간 유리 기판을 etching한 후, 유리 기판이 etching된 모양을 통해 이온 빔의 형태를 분석하였다. 본 연구를 위하여 sputtering과 이온 빔 처리가 가능한 챔버를 제작하였으며, scroll pump와 turbo molecular pump를 사용하였다. Base pressure $1.5{\times}10^{-6}Torr$에서 실험이 진행되었고, 불활성 기체 Ar을 사용하였다. Ar 기체를 주입시 pressure는 $2.6{\times}10^{-3}Torr$였다.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.82-86
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• 1993

An attempt was made to reduce directly Nd2O3 in a cryolited based fluoride bath. Neodymium metal was electrodeposited on the iron cathode to produce the Fe-Nd eutectic alloy in a liquid state at 90$0^{\circ}C$. Graphite was adopted for the anode and pure iron for the cathode. Electrolyte was composed of Na3AlF6 50wt.%. AlF3 34wt.% and Nd2O3 16wt.%. Analysis of typical alloy product showed Al 63.4wt.% Fe 26.9wt.% and Nd 7.0 wt.% The enrichment of neodymium in the alloy couldn't be obtained because aluminum codeposited with ne-odydmium. Experimental results proved that the cryolited based electrolyte was unstable for the electrolysis of rare earth oxides even though their prominent solubilities.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.51-52
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photo current is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO and ITO/PEDOT:PSS were used as an anode, and Al and LiF/AI were used as a cathode. It was found that an incorporation of PEDOT:PSS layer between the ITO and $Alq_3$ increases a built-in voltage by about 0.4V. This is consistent to a difference of a highest occupied energy states of ITO and PEDOT:PSS. This implies that a use of PEDOT:PSS layer in anode improves the efficiency of the device because of a lowering of anode barrier height. With a use bilayer cathode system LiF/Al, it was found that the built-in voltage increases as the LiF layer thickness increases in the thickness range of 0~1nm. For 1nm thick LiF layer, there is a lowering of electron barrier by about 0.2eV with respect to an Al-only device. It indicates that a very thin alkaline metal compound LiF lowers an electron barrier height.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.299-300
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• 2009

We have studied an organic layer and semitransparent Al cathode thickness dependent optical properties for top-emission organic light-emitting diodes. Device structure is ITO(170nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(100nm) and Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total, organic layer was varied from 85nm to 165nm, a ratio of those two layers was kept to be about 2:3. Then it was compared with that of bottom devices. And a thickness of semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer thickness of 140nm. We were able to control the emission spectra from the top-emission organic light-emitting diodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.21-24
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• 2003

The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.19 no.2
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• pp.161-176
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• 2021

In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form Al_zSm_y or Ga_xSm_y intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga₃Sm and Ga₆Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl₃-AlCl₃-GaCl₃ melt, while only Ga₆Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl₃ melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.