• Proceedings of the KSME Conference
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• 2001.06c
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• pp.316-321
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• 2001

The optical storage device has recently experienced significant improvement, especially for the aspects of high capacity and fast transfer rate. However, it is necessary to study a new shape of air bearing surface for the rotary type actuator because the optical storage device has the lower access time than that of HDD (Hard Disk Drives). In this study, we proposed the air bearing shape by using SA (Simulated Annealing) algorithm which is very effective to achieve the global optimum instead of many local optimums. The objective of optimization is to minimize the deviation in flying height from a target value 100nm. In addition, the pitch and roll angle should be maintained within the operation limits.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.270-279
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and furnace atmosphere on the microstructure and hardeness were determined in SCM440 steel which has been widely used for automotive parts. The well-spheroidized structure and minimum hardness were obtained when the steel was heat-treated at $770^{\circ}C$ for 6 hours, cooled to $720^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $720^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate to the spheroidizing annealing. It was found that a cooling rate of $100^{\circ}C/hr$ was the fastest cooling rate applicable to the SCM440 steel among the four cooling rates used in this study. The microstructure consisted of ferrite and very fine spheroidized cementite when the steel was annealed for 13 hours at $720^{\circ}C$ below $A_{C1}$ temperature. This was caused by the short annealing time and the retarding effect of Cr and Mo on both the dissolution of pearlite to cementite and coarsening of spheroidized cementite. The steel heat treated in air showed the decarburized layer of about $125{\mu}m$ in thickness at the surface.

• Transactions of Materials Processing
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• v.28 no.6
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• pp.354-360
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• 2019

The plastic strain ratio is one of the factors that affect the deep drawability of metal sheets. The plastic strain ratio of fully annealed Cu sheet is low because its texture has {001}<100>. In order to improve the deep drawability of Cu sheet, it is necessary to increase the plastic strain ratio of Cu sheet. This study investigate the increase of plastic strain ratio of a Cu sheet after the first asymmetry rolling and annealing, and the second asymmetry rolling and annealing in air and Ar gas conditions. The average plastic strain ratio (R_m) was 0.951 and |ΔR| value was 1.27 in the initial Cu sheet. After the second 30.1% asymmetric rolling and annealing of Cu sheet at 1000℃ in air condition, the average plastic strain ratio (R_m) was 1.03 times higher. However, |ΔR| was 0.12 times lower than that of the initial specimen. After the second 18.8% asymmetric rolling and annealing of Cu sheet at 630℃ in Ar gas condition, the average plastic strain ratio (R_m) was 1.68 times higher and |ΔR| was 0.82 times lower than that of the initial specimen. These results are attributed to the change of the texture of Cu sheet due to the different annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.99-102
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• 2010

Large-scaled area and aligned copper oxide nanowires have been synthesized by a vapor-phase approach to the facial synthesis of copper oxide nanowires supported on the surface of a copper gasket. The effects of annealing temperature and time were investigated. Long and aligned nanowires can only formed within a narrow temperature range from 400 to $500^{\circ}C$ for 4 hrs. Annealing copper gasket in static air produces large-area, uniform, but not well vertically aligned nanowires along the copper gasket surface. The surface of copper gasket is converted into bicrystal CuO nanowires was observed after the copper gasket is annealed under static air condition.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.195.2-195.2
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• 2014

Nanodiamond (ND) is composed of inner diamond core and outer graphite shell. The size of ND used in this study was about 5 nm. The ND solution was dropped on silicon substrate and dried in air. Dried ND sample was purified by using annealing method in air. Then, 40 keV Fe ion was irradiated into the sample. The dose was varied from $1{\times}10^{14}$ to $1{\times}10^{16}ions/cm^2$. The post annealing was performed at 1073 K in the vacuum to recover diamond structure. The annealing at 873 K in air was performed to remove the outer graphite shell. The structure of ND was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. We will present the detailed data and results in the conference.

• New & Renewable Energy
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• v.17 no.4
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• pp.36-45
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• 2021

To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.120-125
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• 2002

The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.442-446
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• 2003

Tin dioxide ($SnO _2$) thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition. A few hillocks like a cauliflower were observed and the number of hillock on thin film surface increased with annealing temperature in air atmosphere. The oxygen content and the binding energy during air annealing at$ 500^{\circ}C$ came to close the stoichiometric $SnO_2$. The cauliflower hillocks seem to be the result of the continuous migration of the tiny grains to release the stress of an expanded grain. Sensitivity of CO gas depended on annealing temperature and increased with increasing annealing temperature.