• Title/Summary/Keyword: Air annealing

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Crystal Growth of $LiTaO_3$ and the Effect pf Crucible Type and Atmosphere ($LiTaO_3$ 단결정 성장과 용기 및 분위기의 영향)

  • 박승익;채승욱;김정돈;주기태;정수진
    • Journal of the Korean Ceramic Society
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    • v.31 no.1
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    • pp.39-46
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    • 1994
  • LiTaO3 single crystals were growth without cracking using Pt-Rh crucible and Ir crucible. The starting composition to get the melt of congruent melting composition, which has been dependent upon the experimental procedure, was taken after fixing the total growing process by the result of preliminary experiments. The Rh contamination from the Pt-Rh crucible was to be neglected if the crystal had been grown under inert atmosphere, which resulted in the crystal color being slightly yellow. This color was decolored after 24 hour's annealing at 1200℃ under air atmosphere. The optimum conditions for the crystal growing and the diameter control were so dependent upon the crucible material in spite of using the crucible of the same size. The liquid-solid interface of LiTaO3 crystal of 1" diameter has been flat if the rotation speed was 45rpm.

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Single Crystals Growth of Cubic Zirconia by Skull Method (Skull법에 의한 Cubic Zirconia 단결정 성장)

  • 김석호;최종건;오근호;조영환;김영준;오봉인;강원호
    • Journal of the Korean Ceramic Society
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    • v.25 no.2
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    • pp.161-167
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    • 1988
  • Yttria-Stabilized Cubic Zirconia Crystals with Various Y2O3 amounts (6-15mol%) were grown by the Skull melting technique. The modeling of the nucleation at the Skull bottom and the best growth condition were studied. The abrupt changes in generator heating Power and lowering rate of crucible caused the dendritic growth in the grown crystal. The optimum condition of cubic Zirconia single crystals was obtained when the lowering rate was gradually increased. The effect of Y2O3 amounts on the perfection adn the color of the grown crystal were determined. The darkish color generated in the crystals added Y2O3 amounts over 12mol% was eliminated by the annealing in air at 1200$^{\circ}C$ for 24hrs.

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Annealing Effects of The Electrochromic $MoO_3$ Thin Films (전기변색 $MoO_3$ 박막의 열처리 효과)

  • 임동규;이진민;조봉희;김동진;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.505-508
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    • 1999
  • The effect of the heat treatment on electrochromic properties of $MoO_3$ thin films is investigated by studing optical modulation, optical density, response time, and cyclic voltammetry. From the results of XRD analysis, heat-treated at $450^{\circ}C$ in air for 1 hour $MoO_3$ thin films are found to be crystalline while as-deposited film and heat-treated at low temperature (${\leq}300^{\circ}C$) are amorphous. The electrochrornic devices using as-deposited $MoO_3$ films exhibits good electrochromic properties compare to those using the heat treated $MoO_3$ films. It has shown that the heat-treatment affected the stability and the electrochromic properties of $MoO_3$ films.

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Thermal stabilityof fluorine doped silicon oxide films

  • Lee, Seog-Heong;Yoo, Jae-Yoon;Park, Jong-Wan
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.1
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    • pp.25-31
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    • 1998
  • The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

The Luminescence Property of Ba-Mg-Al-O:$Eu^2+$ Blue Phosphors (Ba-Mg-Al-O:$Eu^2+$ 청색형광체의 발광특성)

  • 김광복;천희곤;조동율;구경완
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.157-161
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    • 2000
  • Blue phosphor of Ba-Mg-Al-O:Eu$^{2+}$ phase was fabricated by conventional firing techniques under reducing atmosphere and its photoluminescence properties are studied with varying Eu concentration and phost-annealing temperature under air atmosphere. This phosphors were well crystallized with particle size in the range of 3~5um and emitted a blue light at a dominent wavelength 450nm for 254nm UV irradiation. The concentration quenching wit Eu$^{2+}$ was that with increasing Eu concentration the energy transfer between the activator ions steadily improves, so that the excitation energy is transported over larger distances through the lattice before luminescence can occur. Thermal quenching also occurred in this phosphor means that in a host lattice with the $\beta$-alumina structure the bond of an Eu$^{2+}$ ion with the nearest-neighbour oxygen ion is much stronger than in a lattice with the magnetoplumbite structure.cture.

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Processing of Tin Oxide Nanoparticles by Inert Gas Condensation Method and Characterization

  • Simchi, Abdolreza;Kohi, Payam
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.122-123
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    • 2006
  • Tin oxide nanoparticles (n-SnO and $n-SnO_2$) were synthesized by the inert gas condensation (IGC) method under dynamic gas flow of oxygen and argon at various conditions. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) method were used to analysis the size, shape and crystal structure of the produced powders. The synthesized particles were mostly amorphous and their size increased with increasing the partial pressure of oxygen in the processing chamber. The particles also became broader in size when higher oxygen pressures were applied. Low temperature annealing at $320^{\circ}C$ in air resulted to crystallization of the amorphous n-SnO particles to $SnO_2$.

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Effect of Sintering Temperature, Heat Treatment and Tempering on Hardness of SH737-2Cu-0.9C Sintered Samples

  • Anand, S.;Verma, N.;Upadhyaya, A.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.555-556
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    • 2006
  • The study examines hardness pattern of SH737-2Cu-.9C samples transient liquid phase sintered at different temperatures viz. $1120^{\circ}C$, $1180^{\circ}C$ and $1250^{\circ}C$, heat treated by various methods and then tempered at different temperatures. Sintered samples were characterized for density and densification parameter, and austenitized at $900^{\circ}C$, subsequently cooled by four different methods viz. annealing, normalizing, oil and brine quenching. Hardness pattern was found minimum for air cooled and maximum for brine quenched, and samples sintered at $1250^{\circ}C$ had relatively higher hardness. The O.Q and B.Q samples were then tempered at $200^{\circ}C$, $400^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$. Hardness pattern typically showed secondary hardness taking place, with maximum around $600^{\circ}C$.

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Synthesis of Zinc Oxide Nano Rods, Sheet and Flower at $80^{\circ}C$ by the Sol-gel Method

  • Wahab, Rizwan;Ansari, S.G.;Kim, Y.S.;Dar, M.A.;Shin, H.S.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.676-677
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    • 2006
  • Synthesis of zinc oxide nanorods, sheets and flower like structure were done by the sol-gel method using zinc acetate dihydrate and sodium hydroxide at $80^{\circ}C$ with 12 hours refluxing time nanorods, in case of as synthesized powder, with diameter of 20-60nm. Annealing at higher temperature (300 and $500^{\circ}C$,) in air ambient changes the morphology to sheet and flower like structure. The standard peak of zinc oxide was observed in IR at $523cm^{-1}$. The UV-VIS spectroscopy of zinc oxide shows a characteristic peak at 375nm.

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Photolithographic patterning and passivation of P3HT organic thin film transistors with photo-sensitive polyvinylalcohol(PVA) layers (감광성 PVA 박막을 이용한 P3HT 유기박막트랜지스터의 포토리소그래피 패터닝과 패시베이션)

  • Nam, Dong-Hyun;Han, Kyo-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.191-191
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    • 2007
  • By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

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Preparation of TiO2 Nanotube Arrays from Thin Film Grown by RF Sputtering

  • Kim, Chang Woo
    • Applied Science and Convergence Technology
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    • v.27 no.5
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    • pp.105-108
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    • 2018
  • Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.