• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.100-104
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• 2019

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.162-169
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• 2017

Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.

• 한국자기학회지
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• 제6권2호
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• pp.86-92
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• 1996

열진공증착 방법으로 제작한 Ag/Co 다층박막의 구조, 자성 및 자기저항에 관하여 연구하였다. Ag층의 두께가 $60{\AA}$ 정도로 두꺼울 때는 Co 두께가 $5{\AA}$에서도 비교적 균일한 다층막의 형태를 이루어서 대부분의 Co층이 강자성의 성질을 가지나 Ag층의 두께가 $30{\AA}$으로 얇고 Co가 $15{\AA}$ 이하일 경우에는 Co층이 섬형화된 불연속 다층박막이 형성되어 섬형화된 많은 부분의 Co가 초상자성 성질을 가졌다. 또한 열처리에 의하여 Co의 섬형화가 진전되어 MR비가 증가 되었다. $3000{\AA}$ 두께의 $Ag30{\AA}/Co10{\AA}$ 불연속 다층박막에서 최대 6.1%의 자기저항비를 얻었으며 SiO를 하지층으로 입힐 경우 $1000{\AA}$ 다층박막에서 층상 구조의 개선으로 반강자성 결합 및 자기저항비가 증가되었다.

• 한국표면공학회지
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• 제55권2호
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• pp.91-95
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• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.601-604
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• 2008

We report on the Ag thickness effect on the electrical and optical properties of indium zinc tin oxide (IZTO)-Ag-IZTO multilayer electrode grown on a PET substrate and the surface plasmon effect of Ag layer on the optical properties of IZTO-Ag-IZTO electrode. Using an IZTO-Ag-IZTO multilayer with a total thickness below ~80 nm, we can obtain high-quality flexible electrode with very low sheet resistance, high transmittance, high work function and superior flexibility.

• 한국자기학회지
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• 제8권3호
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• pp.131-137
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• 1998

동시진공증착한 Ag-Co합금박막의 두께에 따르는 미세구조 및 거대자기저항의 거동의 변화를 연구하였다. 증착된 상태에서 40 at.%Co 합금의 200nm두께에서 최대 24%의 자기저항을 얻었다. 합금박막의 두께가 감소함에 따라, 특히 50NM 이하에서 비저항이 급격하게 증가되었고, 비저항 차 및 자기저항은 감소하였다. 비저항의 증가는 주로 표면저항의 증가가 주도하였다. 고분해능 T뜨을 사용하여 두께 감소에 따르는 합금박막의 미세구조 변화를 분석한 결과, 첫째 aG 및 cO 입자의 크기가 감소하며, 둘째 Co 및 Ag간의 상호 고용도가 증가되며, 섯째 Co입자의 형성비의 변화가 확인되었다. 이러한 미세구조적 변화는 자성체 입자의 자기모멘트, 자기이방성 등의 가지 상태의 변화를 가져오게 되어 자기저항에 영향을 끼치는 것으로 분석된다. 따라서 50nm 이하에서 거대자기저항의 감소는 표면에서의 스핀전도에 의한 형상 뿐만 아니라 미세구조의 면화도 크게 기여하는 것으로 보인다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.37-43
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• 2022

In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10^-3 Ω^-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

• 열처리공학회지
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• 제27권5호
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.385-386
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• 2007

We prepared the Al doped ZnO coating Ag multilayer thin films on glass without substrate heating using FTS system. The structure of multilayer thin films has Al doped ZnO/Ag/Al doped ZnO(AZO/Ag/AZO). The thickness of top and bottom AZO thin films were fixed to 50 nm, respectively and controlled the thickness of Ag thin films with deposition time. As-doped multilayer thin films were prepared at 1mTorr and input power (DC) of 100W at room temperature. To investigate the film properties, we employed four-point probe, UVNIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).