• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.

• Journal of the Korean Society of Food Science and Nutrition
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• v.35 no.9
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• pp.1245-1250
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• 2006

This study was carried out to develop the method of preparing lecithin-fortified ginseng extract. Firstly, soybean lecithin was mixed with soybean oil (LCS) in varying ratio (2.5%, 5%, 10% and 20%). Then, one part volume of LCS was mixed with three parts volume of ginseng extract with 10% solid matter content and the mixture was vortexed vigorously. Finally, the mixture was spinned at the speed of 3,000 rpm for 30 minutes to separate oil and aqueous ginseng extract layer (AG). AG was then subjected to qualitative and quantitative analysis of phospholipids and ginsenosides. Fatty acid composition and crude fat content before and after LCS was determined. Stability of lecithin in ginseng extract was determined by analyzing phospholipid content in the one third upper and lower layer of the concentrated AG in Falcon tubes while storing the LCS treated concentrated AG in 4, 25 and 40oC for 6 months. Ratio of lecithin transferred to AG increased with the increase in lecithin content of soybean oil. There was no significant change in fatty acid composition and crude fat content, and ginsenoside content in the ginseng extract before and after LCS treatment. TLC and HPLC pattern of saponin fraction before and after treating the ginseng extract with LCS demonstrated no observable difference. There was no change in lecithin content in the upper and lower one third layer of ginseng extract in the tubes after storing the concentrated AG in 4, 25 and $40^{\circ}C$ for 6 months. Ginsenosides HPLC pattern was not changed when stored the LCS-treated ginseng extract in those conditions for six months, indicating satisfiable stability of the LCS-treated concentrated ginseng extract. From these results, it can be concluded that treatment of the ginseng extract with lecithin containing soybean oil is a labor effective method with satisfiable stability to fortify lecithins to ginseng extract.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Economic and Environmental Geology
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• v.12 no.2
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• pp.79-93
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• 1979

Twenty five samples of the scheelite-powellite series from twelve Korean tungsten deposits of various geologic settings were studied mineralogically and geochemically. Variations in the trace-element contents of the scheelite minerals are considered in relation to geologic settings and mineralogic properties. Scheelites from ore deposits developed in similar geologic settings and under similar physicochemical conditions are characterized by specific combinations of trace elements.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.566-566
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• 2012

그래핀(Graphene)은 모든 탄소 동소체의 기본구성 요소로 2 차원 결정구조를 가지며, 양자홀 효과(quantum Hall effect), 뛰어난 열 전도도, 고 탄성, 광학적 투과성 등과 같은 탁월한 물리적 성질을 보이는 물질이다. 이러한 그래핀의 우수한 특성은 전계 효과 트랜지스터(field effect transistor), 화학/바이오 센서, 투명 전극(transparent electrode) 등의 다양한 전자소자를 개발하는 응용 가능하다. 그 중, 그래핀 투명전극의 제조는 가장 응용가능성이 높은 분야이다. 현재 투명전극 물질로는 인듐-주석 산화물(indium tin oxide; ITO)가 널리 이용되고 있으나, 인듐의 고갈로 인한 공급부족 문제 및 고 생산비용, 휘어지지 않는 취성 등의 단점을 지니고 있다. 따라서, 우수한 광학적 투과성과 전기전도성을 지닌 그래핀이 ITO의 대체 물질로서 각광받고 있다.[1-5] 본 연구에서는 그래핀의 투명전도필름의 응용을 위해 면저항을 낮추기 위한 방법으로 화학적 도핑(doping)을 이용하였다. 그래핀은 구리(copper; Cu) 호일을 촉매로 사용하여 열 화학증착법(Thermal Chemical Vapor Deposition)을 이용하여 합성하였다. 합성된 그래핀은 PMMA(Poly(methyl methacrylate)) 전사법을 이용하여 산화실리콘(SiO2) 기판에 전사 후, 염화은(AgCl)과 클로로벤젠(C6H5Cl)으로 만든 콜로이드(colloid) 용액에 디핑(dipping)하여 그래핀에 은 입자를 도핑 하였다. 그 결과, 은 입자 도핑 농도에 따라 면저항이 감소하는 양상을 보였다. 제작된 그래핀 투명전도성 필름의 투과도는 자외선-가시광선-근적외선 분광법(UV-Vis-NIR spectroscopy)를 이용하여 측정하였고, 라만 분광법(Raman spectroscopy)을 통해 그래핀 필름의 질적 우수성과 성장 균일도를 조사하였다.

• Economic and Environmental Geology
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• v.47 no.4
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• pp.363-379
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• 2014

The Haenam Pb-Zn skarn deposit is located at the Hwawon peninsula in the southwestern part of the Ogcheon Metamorphic Belt. The deposit is developed along the contact between limestone of the Ogcheon group and Cretaceous quartz porphyry. Petrography of ore samples, chemical composition of skarn and ore minerals, and geochemistry of the related igneous rocks were investigated to understand the characteristics of the skarn mineralization. Skarn zonation consists of garnet${\pm}$pyroxene${\pm}$calcite${\pm}$quartz zone, pyroxene+garnet+quartz${\pm}$calcite zone, calcite+pyroxene${\pm}$garnet zone, quartz+calcite${\pm}$pyroxene zone, and calcite${\pm}$chlorite zone in succession toward carbonate rock. Garnet commonly shows zonal texture comprised of andradite and grossular. Pyroxene varies from Mn-hedenbergite to diopside as away from the intrusive rock. Chalcopyrite occurs as major ore mineral near the intrusive rock, and sphalerite and galena tend to increase as going away. Electron probe microanalyses revealed that FeS contents of sphalerite become decreased from 5.17 mole % for garnet${\pm}$pyroxene${\pm}$calcite${\pm}$quartz zone to 2.93 mole %, and to 0.40 mole % for calcite+pyroxene${\pm}$garnet zone, gradually. Ag and Bi contents also decreased from 0.72 wt.% and 1.62 wt.% to <0.01 wt.% and 0.11 wt.%, respectively. Thus, the Haenam deposit shows systematic variation of species and chemical compositions of ore minerals with skarn zoned texture. The related intrusive rock, quartz porphyry, expresses more differentiated characteristics than Zn-skarn deposit of Meinert(1995), and has relatively high$SiO_2$ concentration of 72.76~75.38 wt.% and shows geochemical features classified as calc-alkaline, peraluminous igneous rock and volcanic arc tectonic setting.

• Economic and Environmental Geology
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• v.22 no.1
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• pp.35-63
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• 1989

Geochemical characteristics of the Guryongsan (Ogcheon) uraniferous black slate show that this is an analogue to the conventional Chattanooga and Alum shales in occurrences. Whereas, its highest enrichment ratio in metals including uranium, among others, is explained by the cyclic sedimentation of the black muds and quartz-rich silts, and the uniform depositional condition with some what higher pH condition compared to the conditions of the known occurrences. The cyclic sedimentation, caused by the periodic open and close of the silled basin, has brought about the flush-out) of the uranium depleted water and the recharge with the new metal-rich sea water, which consequently contributed to the high concentration of metals in mud. The metal-rich marine black muds, which mostly occur in the early to middle Palaeozoic times, is attributed by the geologic conditions which related to the atmospheric oxygen contents, and these are scarcely met in the late Precambrian and/or with the onset of Palaeozoic era in the geologic evolution of the earth.