• Title/Summary/Keyword: Ag/Pd conductor

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Reliability of Joint Between Solder Bump and Ag-Pd Thick Film Conductor and Interfacial Reaction (솔더범프와 Ag-Pd 후막도체의 접합 신뢰성 및 계면반응)

  • Kim Gyeong Seop;Lee Jong Nam;Yang Taek Jin
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.151-155
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    • 2003
  • The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the alumina substrate and the IMC layer between $Sn-37wt\%Pb$ solder and Ag-Pd thick film conductor after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, Ag-Pd conductor pad roughness were increased from 304nm to 330nm. $Cu_6Sn_5$ formed during initial ref]ow process at the interface between TiWN/Cu UBM and solder grew by the succeeding reflow process so the grains had a large diameter and dense interval. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about $0.1\~0.6{\mu}m$. And a needle-shaped $Ag_3Sn$ was also observed at the inside of the solder.

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Characteristics of Joint Between Ag-Pd Thick Film Conductor and Solder Bump and Interfacial Reaction (Ag-Pd 후막도체와 솔더범프 사이의 접합특성 및 계면반응)

  • 김경섭;한완옥;이종남;양택진
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.1-6
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    • 2004
  • The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the ECM(Engine Control Module) alumina substrate and the intermetallic compound layer between Sn-37wt%Pb solder and pad joints after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, conductor pad roughness were increased from 304 nm to 330 nm. $Cu_6/Sn_5$ formed during initial reflow process at the interface between TiWN/Cu pad and solder grew by the succeeding reflow process, so the grains became coarse. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about 0.1∼0.6 $\mu\textrm{m}$. And a needle-shaped was also observed at the inside of the solder.

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Effect of Frit and Sintering Conditions on the Microstructure and Electrical Property in Ag and Ag/Pd Thick Film Conductors (프릿트 및 소결조건이 Ag 및 Ag/Pd계 후막도체의 미세구조와 전기적성질에 미치는 영향)

  • 구본급;김호기
    • Journal of the Korean Ceramic Society
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    • v.25 no.6
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    • pp.623-630
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    • 1988
  • As a function of the composition and content of frit, the electrical property of Ag and Ag/Pd thick film conductors were investigated with microstructure. With increasing sintering temperature in Ag-frit thick film conductors, electrical sheet resistivity decreased, but again increased above 80$0^{\circ}C$. And when frit contents is 5wt%, compact and homogenious microstructure can be obtained, then electrical sheet resistivity has minimum value. In Ag/Pd-frit film conductor, the electrical sheet resistivity decreased with increasing sintering temperature. The system which having frit with low softing point has lower sheet resistivity then to add high softening point frit.

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Ni/Cu Metallization for High Efficiency Silicon Solar Cells (Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.