• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.346-346
• /
• 2008

최근 디지털 컨버젼스에 의해서 정보 단말기 network가 디지털 기술을 기반으로 유기적으로 융 복합화 되고 있으며 BT, NT, ET, IT의 융합 기술의 필요성이 점차적으로 증대되고 있다. 이러한 환경 하에서 다양한 정보 및 서비스의 송신 및 수신이 가능한 휴대 단말기의 필요성에 부응하여 기존의 전화 기능, 카메라, DMB 이외에도 홈 네트워크, mobile internet 등 더욱 다양한 기능들이 요구되고 있다. 종래에는 수동 부품과 능동 부품의 실장을 별개로 추진했으나 최근에는 수동 및 능동 부품을 하나의 패키지 내에 실장 가능하도록 하는 3-D Integration을 추진하고 있다. 지금까지 여러 부품들을 실장 시키기 위한 공정들의 대부분은 높은 온도에서 공정이 이루어졌으나 여러 부품들을 손상 없이 집적화하고 실장하기 위해서는 저온화 공정이 필요하다. 최근 많은 저온 공정 중에서 Aerosol Deposition Method는 상온에서 세라믹 후막을 성막할 수 있어 가장 주목받고 있는 공정중의 하나이다. 본 연구에서는 3-D Integration을 실현하기 위해 이종 접합에 유리하고 상온에서 성막 공정이 이루어지는 Aerosol Deposition Method를 이용하여 금속 기판 위에 금속, 폴리머, 세라믹 후막을 성막시켰다. 기판 재료로는 Cu 기판을 사용하였으며 출발 파우더로는 Polyimide 파우더와 $Al_2O_3$ 파우더, Ag 파우더를 사용하였으며 이종 접합간의 메커니즘의 양상을 보기 위해 같은 조건에서 이종 접합간의 성막률을 비교하였으며 FE-SEM으로 미세 구조를 관찰하였다. 또한 기판의 표면 거칠기에 따른 메커니즘의 양상을 연구하였다.

• 한국전기전자재료학회논문지
• /
• 제26권12호
• /
• pp.909-914
• /
• 2013

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However, non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of 'as deposition'. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.348-348
• /
• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

• 한국입자에어로졸학회지
• /
• 제9권3호
• /
• pp.127-132
• /
• 2013

Recently, Aerosol Deposition method has attracted considerable attention because of its advantages to produce ceramic coatings on various substrates at room temperature. This method is strongly dependent on the raw powder, which should have high mobility with carrier gas and moderate mechanical strength to be crushed onto the substrate. In this report, the effects of the ceramic granules' compressive strength on the ceramic coating formation are discussed. The ceramic granules were prepared by spray-drying method and heat treated at various temperatures. It was found that at the moderate mechanical strength of ceramic granules gave more effective film formation behavior during Aerosol Deposition method.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.24-24
• /
• 2007

Aerosol deposition(AD) method is a emerging technology for the room temperature deposition of the dielectric thin films with high quality. In this study, $Al_2O_3$ thin films were deposited by aerosol deposition method directly from raw powders. To get uniform and smooth film surface, Process parameters such as gas consumption rate, nozzle-substrate distance and vibration speed were optimized. From XRD results, $Al_2O_3$ thin films have the same crystal structures with starting powders. $Al_2O_3$ thin films also showed dense microstructure. Electrical properties of the thin films were also investigated.

• 마이크로전자및패키징학회지
• /
• 제11권4호
• /
• pp.55-59
• /
• 2004

본 논문은 광 활성도가 가장 좋은 아나타제(anatase)상의 광촉매 $TiO_2$분말을 상온에서 aerosol deposition 법을 사용하여 박막을 제조하였다. 이런 제조 방법은 aerosol 분말을 초음속으로 분사하여 기판에 증착시키는 방법으로, 저온에서 박막증착이 가능하여 thermal stress를 줄일 수 있고, 공정 단가를 낮출 수 있다는 장점이 있다. 박막 제조시 aerosol bath의 압력은 500 torr이고, chamber의 압력은 0.4 torr 였다. 이런 압력차는 $0.4 mm{\times}10 mm$의 크기의 노즐을 통해 $TiO_2$ 나노 분말을 초음속으로 가속하여 기판에 증착시켰다. 박막 제조를 위해 사용한 기판은 수질정화에 응용하기 위해 직경 50 mm인 원판 SUS mesh를 사용하였다. $TiO_2$ 분말의 고른 분포를 위해 $TiO_2$ 분말에 함유되어 있는 수분을 제거하고 이차 입자의 생성을 억제하기 위해서 알코올 bath 속에서 90분간 초음파 세척을 한 후 건조하였다. SUS mesh 위에 증착되어 있는 $TiO_2$ 박막의 입자크기를 알아보기 위해 주사 현미경(SEM)으로 분석하였으며, $1 {\mu}m$정도의 입자 크기를 관찰 할 수 있었다. X-ray diffraction (XRD) 분석 결과 aerosol deposition 후에도 분말의 anatase상은 그대로 유지되었으며, 이런 결과는 광촉매 작용을 이용한 수처리용 필터로 활용이 가능하다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
• /
• pp.24.2-24.2
• /
• 2006

• 한국세라믹학회지
• /
• 제37권2호
• /
• pp.117-121
• /
• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.

• 한국세라믹학회지
• /
• 제37권1호
• /
• pp.77-81
• /
• 2000

Silica glass films to utilize optical waveguides was fabricated by Aerosol Flame Deposition(AFD) method. As the amount of B2O3 increased in the sol solution of (92-x)SiO2-xB2O3-8P2O5, the thermophoretic deposition rate onto Si substrate was markedly lowered due to vaporizing out of B2O3 and P2O5 during the vaporization and reaction of the aerosol in the flame. GeO2 was added to 62SiO2-30B2O3-8P2O5 in order to control easily the refractive index of glass films. As the amount of GeO2 increased from 2 to 12 wt%, its refractive index increased from 1.4633 up to 1.4716.

• 한국입자에어로졸학회지
• /
• 제5권1호
• /
• pp.17-27
• /
• 2009

Particle deposition on a semiconductor wafer larger than 100 mm was studied experimentally and numerically. Particularly the electrostatic effect on particle deposition velocity was investigated. The experimental apparatus consisted of a particle generation system, a particle deposition chamber and a wafer surface scanner. Experimental data of particle deposition velocity were obtained for a semiconductor wafer of 200 mm diameter with the applied voltage of 5,000 V and PSL particles of the sizes between 83 and 495 nm. The experimental data of particle deposition velocity were compared with the present numerical results and the existing experimental data for a 100 mm wafer by Ye et al. (1991) and Opiolka et al. (1994). The present numerical method took into consideration the particle transport mechanisms of convection, Brownian diffusion, gravitational settling and electrostatic attraction in an Eulerian frame of reference. Based on the comparison of the present experimental and numerical results with the existing experimental results the present experimental method for a 200 mm semiconductor wafer was found to be able to present reasonable data.