• Title/Summary/Keyword: Advanced type

Search Result 4,144, Processing Time 0.036 seconds

Atmospheric pressure plasma deposition of $SiO_X$ thin films by direct-Type pin-to-plate dielectric barrier discharge for flexible displays

  • Gil, Elly;Lee, June-Hee;Kim, Yang-Su;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.1483-1485
    • /
    • 2009
  • Silicon dioxide ($SiO_2$) thin films were deposited using a modified DBD called a "pin-to-plate-type DBD" in order to generate high-density plasmas with a gas mixture of PDMS/$O_2$. The effect of the gas mixture on the physical and chemical properties of $SiO_2$ deposited by the pin-to-plate-type DBD with the mixture of PDMS/$O_2$ was investigated.

  • PDF

Simulation and Experimental Study of A TLP Type Floating Wind Turbine with Spoke Platform

  • Kim, Hyuncheol;Kim, Imgyu;Kim, Yong Yook;Youn, DongHyup;Han, Soonhung
    • Journal of Advanced Research in Ocean Engineering
    • /
    • v.2 no.4
    • /
    • pp.179-191
    • /
    • 2016
  • As the demand for renewable energy has increased following the worldwide agreement to act against global climate change and disaster, large-scale floating offshore wind systems have become a more viable solution. However, the cost of the whole system is still too high for practical realization. To make the cost of a floating wind system be more economical, a new concept of tension leg platform (TLP) type ocean floating wind system has been developed. To verify the performance of a 5-MW TLP type ocean floating wind power system designed by the Korea Advanced Institute of Science and Technology, the FAST simulation developed by the National Renewable Energy Laboratory is used. Further, 1/50 scale model tests have been carried out in the ocean engineering tank of the Research Institute of Medium and Small Shipbuilding, Korea. This paper compares the simulation and ocean engineering tank test results on motion prediction and tension assessment of the TLP anchor.

Novel Channel Estimation Method in Fast Fading Channels Applied to LTE-Advanced (LTE-Advanced에 적용되는 빠른 페이딩 채널의 새로운 채널 추정 방법)

  • Malik, Saransh;Portugal, Sherlie;Moon, Sang-Mi;Kim, Bo-Ra;Kim, Cheol-Sung;Hwang, In-Tae
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.49 no.5
    • /
    • pp.51-58
    • /
    • 2012
  • Accurate transmission and estimation of the channel statistics affected by high Doppler spread is one of the main issues of concern for the latest and future mobile communication systems. Therefore, it is important to research in novel channel estimation techniques that overcome the limitations of conventional methods. In this paper, we propose a novel channel estimation method that, after a simple estimation in the first OFDM symbol, uses Kalman filter to predict the channel in the rest of OFDM symbols with pilot subcarriers. Our method is designed considering the lattice-type arrangement of pilot subcarriers in LTE-Advanced, since most of the studies so far focus on block-type or comb-type pilot arrangements. In addition, to optimize the results, we use the filtering of channel impulse response and Wiener Filter for the estimation of the channel frequency response in the rest of the subcarriers.

Enhanced Performance of Solution-Processed n-channel Organic Thin Film Transistor with Electron-Donating Injection Layer

  • Kim, Sung-Hoon;Lee, Sun-Hee;Han, Seung-Hoon;Choi, Min-Hee;Jeong, Yong-Bin;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.64-66
    • /
    • 2009
  • We obtained high performance of n-type organic thin film transistors (OTFTs) using a solution process. N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-$8CN_2$) in ambient air. Low work function interlayer on source/drain is needed to enhance the electron injection to low LUMO level of n-type organic semiconductor. By using self-assembled monolayer (SAM) the field-effect mobility of 0.33 $cm^2$/Vs was achieved.

  • PDF

Molecular Orbital Calculation for Polymeric Beryllium Hydride, Polyeithylene and Polymeric Boron Hydride According to the Pseudo-Lattice Method

  • Oh, Seok-Heon;Jhang, Man-Chai;Jhon, Mu-Shik
    • Bulletin of the Korean Chemical Society
    • /
    • v.5 no.1
    • /
    • pp.37-41
    • /
    • 1984
  • The pseudolattice calculations in the CNDO/2 level of approximation are carried out for polymeric beryllium hydride, polyethylene and polymeric boron hydride. Since there is no evidence on the geometry for polymeric boron hydride, the two possible geometries are assumed. One is a polyethylene-type geometry and the other is a polymeric beryllium hydride-type geometry. In order to compare their relative stability, we calculate polyethylene and polymeric beryllium hydride and then compare with polymeric boron hydride having the assumed structures. The total energy calculation indicates that a polymeric beryllium bydride-type geometry is more stable than a polyethylene-type geometry. Our results obtained for polyethylene are in good agreement with those given by CNDO/2 crystal orbital. From the convergence problem with respect to the number of unit cells (M), the calculation with value of 4 for M can be considered to give the convergence limit results.

Improvement of Photoelectrochemical Properties through Activation Process of p-type GaN (p-type GaN의 Activation을 통한 광전기화학적 특성 향상)

  • Bang, Seung Wan;Kim, Haseong;Bae, Hyojung;Ju, Jin-Woo;Kang, Sung-Ju;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.24 no.4
    • /
    • pp.59-63
    • /
    • 2017
  • The n-type GaN semiconductor has excellent properties as a photoelectrode, but it has disadvantage that its reliability is deteriorated due to the photocorrosion because the oxygen reaction occurs on the surface. For this reason, there are fundamental attempts to avoid photocorrosion reaction of GaN surfaces by using the p-type GaN as a photoelectrode where hydrogen generation reaction occurs on the surface. However, p-type GaN has a problem of low efficiency because of its high resistivity and low hole mobility. In this study, we try to improve the photocurrent efficiency by activation process for the p-type GaN. The p-type GaN was annealed for 1 min. at $500^{\circ}C$ in $N_2$ atmosphere. Hall effect measurement system was used for the electrical properties and potentiostat (PARSTAT4000) was used to measure the photoelectrochemical (PEC) characteristics. Consequently, the photocurrent density was improved more than 1.5 times by improving the activation process for the p-type GaN. Also, its reliability was maintained for 3 hours.

A study on surface roughness depending on cutting direction and cutting fluid type during micro-milling on STAVAX steel (STAVAX 강의 마이크로 밀링 중 가공 방향 및 절삭유체 분사형태에 따른 표면 거칠기 경향에 관한 연구)

  • Dong-Won Lee;Hyeon-Hwa Lee;Jin Soo Kim;Jong-Su Kim
    • Design & Manufacturing
    • /
    • v.17 no.2
    • /
    • pp.22-26
    • /
    • 2023
  • As Light-Emitting Diodes(LEDs) continue to advance in performance, their application in automotive lamps is increasing. Automotive LEDs utilize light guides not only for aesthetics but also to control light quantity and direction. Light guides employ patterns of a few hundred micrometers(㎛) to regulate the light, and the surface roughness(Ra) of these patterns can reach tens of nanometers(nm). Given that these light guides are produced through injection molding, mold processing technology with high surface quality micro-patterns is required. This study serves as a preliminary investigation into the development of high surface quality micro-pattern processing technology. It examines the surface roughness of the workpiece based on the cutting direction of the pattern and the cutting fluid type when cutting micro-patterns on STAVAX steel using cubic Boron Nitride(cBN) tools. The experiments involved machining a step-shaped micro-pattern with a height of 60 ㎛ and a pitch of 400 ㎛ in a 22×22 mm area under identical cutting conditions, with only the cutting direction and cutting fluid type being varied. The machining results of four cases were compared, encompassing two cases of cutting direction(parallel to the pattern, orthogonal to the pattern) and two cases of cutting fluid type (flood, mist). Consequently, the Ra value was found to be the highest(Ra 128.33 nm) when machining with the flood type in parallel to the pattern, while it was the lowest(Ra 95.22 nm) when machining with the mist type orthogonal to the pattern. These findings confirm that there is a difference of up to 25.8 % in the Ra value depending on the cutting direction and cutting fluid type.