• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1235-1240
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• 2008

In this paper, we presented an active RFID system in 2.45GHz range including LNA, Mixer and gain block. And in this work, a link budget model for RFID applications are proposed. We describe the detailed design and implementation of our system. Our components in RFID system has features such as low Noise Figure, reliable energy budget, and standard compliance with ISO 18000-4. Our receiver is effective for development and evaluation of prototype applications because of the flexibility of the design hardware. So, our platform will be suitable for versatile item management applications.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.51.2-51.2
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.725-726
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• 2007

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1053-1058
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• 2021

This paper presents the multi-band mixer which converts a X-, K- and Ka-band adaptively by adjusting the gate-bias voltage of an active device. The proposed mixer presented a conversion loss of -10 dB at -0.8 V gate-bias voltage for X-band, a conversion loss of -9 dB at -0.3 V gate-bias voltage for K-band and for Ka-band, a conversion loss of -7 dB at -0.2 V gate-bias voltage under the LO power of +6.0 dBm. The 1dB compression point (P1dB) is +0.5 dBm for all band.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.89-92
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• 2008

CMOS 기반의 고주파 집적회로에서는 높은 이득과 출력을 얻기 위하여 인덕터와 같은 수동소자를 사용한다. 그러나 수동소자를 사용하게 되면 넓은 면적을 차지하기 때문에 회로의 크기를 증가시키는 단점을 갖는다. 본 논문에서는 PMOS 를 기반으로 구현한 active inductor 를 적용하여 회로의 면적을 줄일 수 있으며, 기존의 주파수 변환기와 동등한 선형 특성을 갖는 상향 주파수 변환기를 설계하였다. 인덕터를 적용한 상향 주파수 변환기의 OIP3 ($3^{rd}$ Output Intercept Point)는 1.3 dBm 을 가지며, 제안한 상향 주파수 변환기의 OIP3 는 0.8 dBm 으로 동등한 선형 특성을 보이며, layout 상에서 회로의 면적을 40 % 이상 감소하는 특성의 선형 송신기용 주파수 변환기를 설계 분석하였다.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.22-28
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• 1998

A new type of FET source mixer with a single bias voltage has been presented. It is designed to operate at Vds=0 [V] with only one positive supply voltage, which makes mixer circuits simple. The proposed mixer has shown improved stability and less sensitivity to both bias and LO power compared with conventional active mixers. It also shows lower conversion loss than that of diode mixers. The minimum conversion loss measured at RF frequency of 5.6㎓ is 0.6㏈ for a LO frequency of 5.8㎓.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.825-833
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• 2016

This paper introduces a direct-conversion CMOS RF transmitter for the IEEE 802.15.4 standard with a low-power high-gain up-conversion mixer designed in $0.18{\mu}m$ process. The designed RF DCT(Direct Conversion Transmitter) is composed of differential DAC(Digital to Analog Converter), passive low-pass filter, quadrature active mixer and drive amplifier. The most important characteristic in designing RF DCT is to satisfy the 2.4 GHz Zigbee standard in low power. The quadrature active mixer inside the proposed RF DCT provides enough high gain as well as sufficient linearity using a gain boosting technique. The measurement results for the proposed transmitter show very low power consumption of 7.8 mA, output power more than 0 dBm and ACPR (Adjacent Channel Power Ratio) of -30 dBc.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.14-24
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• 2001

An active MMIC L-band down converting mixer was designed by using GaAs FET with 0.5 ${\mu}$m gate length and 300 ${\mu}$m gate width. Main circuit topology was cascoded two active FETs. It consumed only 7.5 mA with 3V DC voltage supply. Conversion gain of 6.63 dB, minumium noise figure of 5.06 dB and Input $3^{rd}$ Order Intercept Point of 6.4 dBm were obtained. The chip size is 1.86 mm ${\times}$ 1.28 mm.