• 제목/요약/키워드: Active diode

검색결과 363건 처리시간 0.037초

Continuous Conduction Mode Soft-Switching Boost Converter and its Application in Power Factor Correction

  • Cheng, Miao-miao;Liu, Zhiguo;Bao, Yueyue;Zhang, Zhongjie
    • Journal of Power Electronics
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    • 제16권5호
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    • pp.1689-1697
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    • 2016
  • Continuous conduction mode (CCM) boost converters are commonly used in home appliances and various industries because of their simple topology and low input current ripples. However, these converters suffer from several disadvantages, such as hard switching of the active switch and reverse recovery problems of the output diode. These disadvantages increase voltage stresses across the switch and output diode and thus contribute to switching losses and electromagnetic interference. A new topology is presented in this work to improve the switching characteristics of CCM boost converters. Zero-current turn-on and zero-voltage turn-off are achieved for the active switches. The reverse-recovery current is reduced by soft turning-off the output diode. In addition, an input current sensorless control is applied to the proposed topology by pre-calculating the duty cycles of the active switches. Power factor correction is thus achieved with less effort than that required in the traditional method. Simulation and experimental results verify the soft-switching characteristics of the proposed topology and the effectiveness of the proposed input current sensorless control.

에너지 하베스팅 응용을 위한 진동 감지기가 있는 전파정류 회로 설계 (Design of a Full-Wave Rectifier with Vibration Detector for Energy Harvesting Applications)

  • 가학진;유종근
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2017년도 추계학술대회
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    • pp.421-424
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    • 2017
  • 본 논문에서는 진동 감지기가 있는 전파 정류 하베스팅 회로를 설계하였다. 설계된 회로는 진동 감지기와 능동다이오드를 통해 진동이 감지될 때에만 동작하며, 진동이 없을 때 비교기를 off시켜 $C_{STO}$에 저장된 에너지의 누설을 방지한다. 커패시터에 저장된 에너지는 레벨 변환기와 능동다이오드의 구동에 사용된다. 진동 감지기는 Hysteresis 기능이 있는 Schmitt Trigger와 피크검출기로 구현하였다. 제안된 회로는 $0.35{\mu}m$ CMOS 공정으로 설계하였으며, 모의실험을 통해 동작을 검증하였다. 설계된 에너지 하베스팅 회로의 칩 면적은 $590{\mu}m{\times}583{\mu}m$이다.

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780nm Monolithic 4-Beam 레이저 다이오드의 Droop 특성 개선 (The Improvement of Droop Characteristic of 780nm Monolithic 4-Beam Laser Diode)

  • 홍현권;김지호;지유상;성영운;이상돈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.285-287
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    • 2009
  • When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.

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직렬접속형 다이오드 정류기 시스템의 전류주입에 의한 고조파 저감 (Drawing Sinusoidal Input Currents of Series-Connected Diode Rectifiers by A Current Injection Technique)

  • 오준용;최세완;김영석;원충연
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제48권11호
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    • pp.640-645
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    • 1999
  • This paper proposes a new series-connected diode rectifier which draws sinusoidal input currents. The proposed rectifier system is configured by adding an auxiliary circuit to the conventional 12-pulse series-connected diode rectifier and employing a current injection technique. A low kVA($0.02P_{\circ}$(PU) ) active current source injects a triangular current into the interphase reactor of the diode rectifier. The current injection results in near sinusoidal input current from the utility with less than 1% THD. The resulting system is suitable for high voltage and high power applications. Experimental and simulation results are provided from a 220V, 3kVA prototype rectifier system.

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정전력 변환시스템에서 정현파 입력전류를 얻기위한 전류주입형 인터페이스 리액터 (A New Active Interphase Reactor with Sinusoidal Input Current in the Static Power Converter System)

  • 최세완;이홍희;김상욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 A
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    • pp.372-375
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    • 1996
  • In this paper, a new active interphase reactor for twelve-pulse diode rectifiers is proposed. The proposed system draws near sinusoidal currents from the utility. In this scheme, a low kVA(0.02 $P_o$ (PU)) active current source injects a triangular current into an interphase reactor of a twelve-pulse diode rectifier. The modification results in near sinusoidal input current with less than 1% THD. Experimental results are provided from a 208V, 10kVA rectifier system.

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유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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진동에너지 하베스팅을 위한 전파 정류기 성능 비교 (Performance Comparison of Full-Wave Rectifiers for Vibration-Energy Harvesting)

  • 윤은정;양민재;유종근
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2014년도 추계학술대회
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    • pp.278-281
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    • 2014
  • 본 논문에서는 진동에너지 하베스팅을 위한 세 가지 종류의 전파 정류기를 비교 분석 하였다. 첫번째 정류기는 두 개의 능동 다이오드(active diode)와 두 개의 MOSFET로 구성된 전파 정류기로 능동 다이오드의 비교기는 정류기의 출력으로부터 전력을 공급받는다. 두 번째는 네 개의 MOSFET로 구성된 정류기와 하나의 능동 다이오드로 구성된 2단 정류기이며, 마찬가지로 비교기는 정류기의 출력으로부터 전력을 공급받는다. 세 번째는 두 번째 정류기와 동일한 구조이나 비교기의 전력을 정류기의 입력으로부터 공급받는 input-powered 정류기이다. 이 정류기들을 0.35um CMOS 공정으로 설계하고 모의실험을 통해 성능을 비교, 분석하였다. 부하가 큰 경우에는 첫 번째 정류기를 이용하는 것이, 부하가 작은 경우에는 두 번째 정류기를 이용하는 것이 효율적인 측면에서 유리하다. 또한 효율보다는 진동에너지의 유무에 따른 전력 소모가 중요하다면 세 번째 정류기가 유리하다.

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Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters

  • Song, Yoon-Ho;Cho, Young-Rae;Hwang, Chi-Sun;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • Journal of Information Display
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    • 제2권3호
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    • pp.72-77
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    • 2001
  • Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

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