• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.886-893
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• 2004

In this paper, active resonator oscillator using active band pass filter with gain, active resonator with negative resistance using transistor(agilent ATF-34143) is designed and fabricated. Proposed active resonator oscillator for local oscillator in ISM band(5.8GHz) is designed with 5.5 GHz oscillation frequency. Designed active resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. Active resonator oscillators using active band pass filter with gain show the oscillation frequency of 5.6GHz with the output power of -2dBm and phase noise of -81dBc/Hz at the offset frequency of 100kHz. Active resonator oscillators active resonator with negative resistance show the oscillation frequency of 5.6, 5.8GHz with the output power of -4dBm and phase noise of -91dBc/Hz at the offset frequency of 100kHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.8-17
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• 1992

In this paper a push-push oscillator using DR (dielectric resonator) at K-band is designed and constructed. Two identical oscillators are arranged in a push-push configuration that has the frequency of oscillator that is twice frequency each oscillator. A dielectric resonator is placed at the input of an active two-port device(FET) yielding a stable frequency source. The oscillators realized with this technique exhibit excellent spectral purity and cancellation of fundamental frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.763-770
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• 1996

In this paper, the Single-stage Transmission type Injectiong-Locked Oscillator(STILO) was designed and fabicated for the Active Integrated Phased Array Antenna(AIPAA) system. The STILO, which was designed and fabricated by injection-locked technique and hair-pin resonator, has the same 210MHz frequency tuning range of the Voltage Controlled Oscillator(VCO) used by varactor. The locking bandwidth of STILO with 11.5MHz bandwidth, is much better than that of the Injection-Locked Dielectric Resonator Oscillator(ILDRO), And the STILO has the improved noise characteristics in AM, FM, and PM. This STILO is useful for the AIPAA, the coupled VCO array, an the MMIC structure.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.2A
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• pp.122-128
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• 2005

In this paper, a low noise parallel feedback oscillator for harmonic suppression and a frequency doubler are designed and implemented. As the fundamental signal of the oscillator for frequency doubling is extracted between the dielectric resonator (DR) filter and the gate device of the active device, the undesired harmonics at the output of the oscillator is remarkably suppressed. The fundamental signal of the oscillator for frequency doubling directly feeds to the frequency doubler without an additional band pass filter for harmonic suppression. The second harmonic suppression of -47.7 dBc at the oscillator output is achieved, while the fundamental suppression of -37.5 dBc at the doubler output is obtained. The phase noise characteristics are -80.3 dBc/Hz and -93.5 dBc/Hz at the offset frequency of 10 KHz and 100 KHz from the carrier, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1215-1220
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• 2014

In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

• Journal of electromagnetic engineering and science
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• v.12 no.4
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• pp.227-233
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• 2012

This paper describes a novel and compact biosensing platform using an RF active system. The proposed sensing system is based on the oscillation frequency deviation due to the biomolecular binding mechanism on a resonator. The impedance variation of the resonator, which is caused by a specific biomolecular interaction results in a corresponding change in the oscillation frequency of the oscillator so that this change is used for the discrimination of the biomolecular binding, along with concentration variation. Also, a Surface Acoustic Wave (SAW) filter is utilized in order to enhance the biosensing performance of our system. Because the oscillator operates at the skirt frequency range of the SAW filter, a small amount of oscillation frequency deviation is transformed into a large variation in the output amplitude. Next, a power detector is used to detect the amplitude variation and convert it to DC voltage. It was also found that the frequency response of the biosensing system changes linearly with three streptavidin concentrations. Therefore, we expect that the proposed RF biosensing system can be applied to bio/medical applications capable of detecting a nano-sized biomolecular interaction.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.28-35
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• 1993

The MESFET can be used as a three-terminal varactor by employing gate depletion capacitance Cg. In this paper, a novel VCDRO(voltage controlled dielecric resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 6.33dBm output power at a frequency of 11.058GHz and tunning bandwidth of 45MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device.

• Journal of IKEEE
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• v.15 no.1
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• pp.49-56
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• 2011

In this paper, a compact doppler sensor with oscillator type active antenna operating at 2.4GHz frequency band is proposed to measure the distance or speed of a moving object. The active antenna has been realized by oscillator using radiator, patch antenna, as its resonator. The oscillation frequency is shifted depending on approaching of the object, and a detection circuit discriminates the frequency deviation. The oscillator type active antenna has been designed and simulated. The prototype fabricated has a very small circular disk type of diameter 30mm and height 4.2mm. As for antenna performance, broadside radiation pattern with beamwidth of $130^{\circ}$ and oscillation frequency of 2.373GHz has been measured. Test results as a doppler sensor shows that doppler signal voltage of about 190mV has been obtained for conducting plate moving 1 meter away from the sensor. And, doppler signal voltage has been linearly increased to the ground from 4.5m height by free-falling the sensor.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.