• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.257-260
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• 2002

This paper describes the pixel of AMOLED(act ive matrix organic light emitting diode) driving circuit by poly-sl technology. The area per pixel is 278um$\times$278um in 120$\times$160(2.2 inch) Driving the OLEDS with active matrix leads to the lower voltage operation, the lower peak pixel currents and the display with much greater efficiency and brightness The role of the active matrix is to provide a constant current throughout the entire frame time and is eliminating the high currents encountered In the passive matrix approach, This design can support the high resolutions expected by the consumer because the current variation specification is norestricted. The pixel has been designed driving TFT threshold voltage cancellation circuit and wide aperture ratio circuit that communizes 4 pixel. The test simulation results and layout are 11% per threshold-current var Eat ion and 12.5% the aperture ratio of increase.

• ETRI Journal
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• 제26권5호
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of Information Display
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• 제3권2호
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• pp.1-5
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• 2002

A CMOS driving circuit for active matrix type polymer electroluminescent displays was designed to develop an on-chip microdisplay on the single crystal silicon wafer substrate. The driving circuit is a conventional structure that is composed of the row, column and pixel driving parts. 256 gray scales were implemented using pulse amplitude modulation method. The 2-transistor driving scheme was adopted for the pixel driving part. The layout was carried out considering the compatibility with the standard CMOS process. Judging from the layout of the driving circuit, it turns that it is possible to implement a high-resolution display about 400 ppi resolution. Through the HSPICE simulation, it was verified that this circuit is capable of driving a VGA signal mode display and implementing 256 gray levels.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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• pp.632-634
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• 2004

First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.963-968
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• 2002

This paper will review the driving methods and issues of driving circuitry for passive matrix organic electro-luminescent displays(PM-OELDs). And it will shows the proposed one-chip and two-chip solution for driving the PM-OELDs and also the pixel structure and driving methods of active matrix (AM-OELDs). We will discuss the proper applications of OELDs with its power consumption by comparison with that of LCD.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.881-884
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• 2003

We propose a new pixel structure for Active Matrix OLED (AMOLED). The proposed pixel structure can display full color images by compensating threshold voltage (Vth) variation of driving TFTs. And we obtain an improved contrast ratio(C/R) of higher than 600:1

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.153-156
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• 2004

A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.483-485
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• 2007

The active-matrix field emission display (AMFED) was fabricated by integrating carbon nanotube emitters on a-Si thin-film transistors. Also, the tapered macro-gate was adopted for high immunity to a high anode voltage and strong electron beam focusing. The fabricated AMFED was successfully driven with a low voltage of below 15 V.