• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.915-922
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• 2017

내열 및 내유성 고무복합체 특성연구(The study on the thermal and oil resistance rubber composite), 2016.[6] 연구에서는 고온($150^{\circ}C$, $175^{\circ}C$, $200^{\circ}C$) 조건의 고온촉진노화를 통하여 불소고무 복합체의 수명을 예측하였다. 일반적인 고무제품은 온도, 습도, 오존, 빛, 유제, 기계 및 전기적 응력 등의 특성저하 인자에 따라 다른 특성을 나타낼 가능성이 있으며, 이러한 문제를 해결하기 위하여 "내열 및 내유성 고무복합체 특성연구"[6] 연구에서 얻어진 고온촉진노화에 의한 수명 예측값과 저온촉진노화간의 인장강도 변화율 및 신장률 변화율 그리고 부피 변화율, 무게 변화율, 두께 변화율 및 열전도도를 비교 검토하였다. 검토 결과, 요구 한계수명은 모두 만족하였지만 고온촉진노화 결과와 저온촉진노화 결과 간 변화율에서 약간의 격차를 보였다. 이러한 변화율 격차가 일어나는 원인은 고온촉진노화에서는 노화 시 불소고무의 주사슬 분해로 인하여 인장강도, 신장률 감소 및 부피, 무게, 두께 증가가 일어나는데 비해 저온촉진노화에서는 $80^{\circ}C$에서 불소고무의 지속적 경화반응으로 인하여 인장강도, 신장률 및 부피, 무게, 두께 변화가 적게 나타났을 것으로 판단된다.

• Elastomers and Composites
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• 제42권1호
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• pp.20-31
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• 2007

고무의 안정성과 신뢰성 확보를 위해 재료 특성과 수명 평가는 매우 중요하다. 본 연구에서는 연료전지용 고무 가스켓으로 사용되는 황으로 가황한 NBR compound의 수명을 예측하였다. 5, 6, 7 vol% 황산농도에서 120, 140, $160^{\circ}C$ 온도로 각각 3시간에서 600시간까지 가속 노화시험을 하였다. 고무를 황산용액 안에 침지시키기 위해 pyrex glass tube를 사용하였다. 그리고 가열 시간 동안 용액의 증발을 막기 위하여 pyrex glass tube 양쪽 끝을 막았다. 연료전지용 가스켓인 NBR 고무의 수명을 예측하기 위하여 가속 산-열 노화시험 후 물성 실험을 하였으며 산-열 노화시험에서 물리적 특성의 영향을 연구하기 위하여 인장강도, 신장율, 경도, 가교밀도를 측정하였다. 인장강도는 황산농도와 온도가 증가함에 따라서 감소되었는데 이 결과로 Arrhenius 식을 유도하여 수명을 평가하였다.

• 에너지공학
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• 제22권4호
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• pp.338-346
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• 2013

일반 납축전지는 차량의 시동 성능 위주로 최적 설계되어 있다. 최근 차량 전장 시스템과 납축전지를 활용한 연비기술 적용의 증가로 납축전지의 사용 빈도가 늘어나고 있다. 연비기술 적용은 납축전지의 잦은 충방전 반응을 일으켜 납축전지 내구 수명을 단축시키고 있다. 본 연구에서는 납축전지의 노화 수명 모델 구현을 통해 배터리 내구 수명을 예측하는 방법을 제시하고자 한다. 납축전지의 노화에 영향을 미치는 요인은 방전율, 충전 시간, 완충 시간, 온도 조건 등이 있다. 본 논문에서는 납축전지의 동적 거동을 예측하기 위하여 전기화학반응 속도론, 이온의 전달현상, 전극 공극률의 시간에 따른 변화를 고려하였다. 수명 예측을 위해서 노화 메커니즘 중 노화에 가장 큰 영향을 주는 극판 부식 현상과 활물질 탈락을 노화 모델링에 반영하였다. 개발된 납축전지의 노화 모델을 검증하기 위하여 납축전지의 가속 충방전 시험을 수행하였다.

• International Journal of Safety
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• 제1권1호
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• pp.36-42
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• 2002

This paper is aimed at predicting the life of rubber insulating gloves under normal operating stresses from relatively rapid test performed at higher stresses. Specimens of rubber insulating gloves are subject to multiple stress conditions, i.e. combined electrical and thermal stresses. Two modes of electrical stress, step voltage stress and constant voltage stress are used in specimen aging. There are two types of test for electrical stress in this experiment: the one is Breakdown Voltage (BDV) test under step voltage stress and thermal stress and the other is lifetime test under constant voltage stress and temperature stress. The ac breakdown voltage defined as the break-down point of insulation that leakage current excesses a limit value, l0mA in this experiment, is determined. Because the very high variability of aging data requires the application of statistical model, Weibull distribution is used to represent the failure times as the straight line on Weibull probability paper. Weibull parameters are deter-mined by three statistical methods i.e. maximum likelihood method, graphical method and least squares method, which employ SAS package, Weibull probability paper and FORTRAN, respectively. Two chosen models for predicting the life under simultaneous electrical and thermal stresses are inverse power model and exponential model. And the constants of life equation for multistress aging are calculated using numerical method, such as Gauss Jordan method etc.. The completion of life equation enables to estimate the life at normal stress based on the data collected from accelerated aging test. Also the comparison of the calculated lifetimes between the inverse power model and the exponential model is carried out. And the lifetimes calculated by three statistical methods with lower voltage than test voltage are compared. The results obtained from the suggested experimental method are presented and discussed.

• 폴리머
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• 제36권1호
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• pp.88-92
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• 2012

일정 하중에 지속적으로 노출되는 고분자의 장기간 사용을 위해서는 재료의 수명을 평가할 수 있는 가속화된 시험 방법이 필요하다. 반복 피로하중 시험법은 이러한 방법들 중 하나로 많은 관심을 받고 있다. 본 연구에서는 X-선 회절법을 이용하여 고밀도 폴리에틸렌의 반복 피로하중에 의한 구조적 변화와 크리프 변형을 비교하고자 하였다. 이를 위하여 별도의 인장시험기를 제조, X-선 회절기에 부착하여 장시간 변형 과정을 성공적으로 관찰하였다. 그 결과 크리프와 반복 피로하중 사이의 거시적이고 뚜렷한 차이에도 불구하고 결정화도, 결정크기 및 면간거리와 같은 결정의 미세구조는 두 방법에서 거의 동일하게 관찰되었다. 그러나 항복점 전(BYP), 항복점(YP) 그리고 항복점 후(AYP)로 각각 변형시킨 후 시험한 시료의 경우 AYP와 다른 두 시료간 뚜렷한 구조적 차이를 확인할 수 있었다.

• 마이크로전자및패키징학회지
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• 제18권3호
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.996-1001
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• 2010

Recently, the demand of ceramic metal halide lamp has been expanded. Therefore, the lamp with high efficiency and long lifetime are increasing and the evaluation of reliability is needed. In this paper, the degradation phenomena of ceramic metal halide lamp was studied. The lamp was tested for 3000 on/off cycles with each cycle having a duration of 20 minutes on and 20 minutes off based on the accelerated aging experiment based on "Reliability Standards RS C 0085". As result, the corrosion of arc tube and leak was appeared from reaction between inner wall of PCA and chemical elements, and distortion of electrode was resulted from difference of thermal expansion between arc tube of PCA and electrode. Also, the efficiency of lamp was decreased by the change of inner pressure, operation temperature, and driving voltage from wall blackening.

• Macromolecular Research
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• 제15권4호
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• pp.315-323
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• 2007

The present manuscript deals with the prediction of the lifetime of NBR compound based rubber gaskets for use as fuel cells. The material was investigated at 120, 140 and $160^{\circ}C$, with aging times from 3 to 600 h and increasing $H_2SO_4$ concentrations of 5, 6, 7 and 10 vol%. Both material and accelerated acid-heat aging tests were carried out to predict the useful life of the NBR rubber gasket for use as a fuel cell stack. To investigate the effects of acid-heat aging on the performance characteristics of the gaskets, the properties of the NBR rubber, such as crosslink density and elongation at break, were studied. The hardness of the NBR rubber was found to decrease with decreasing acid concentration at both $120\;and\;140^{\circ}C$, but at $160^{\circ}C$, the hardness of the NBR rubber increased abruptly in a very short time at different acid concentrations. The tensile strength and elongation at break were found to decrease with increases in both the $H_2SO_4$ concentration & temperature. The observed experimental results were evaluated using the Arrhenius equation.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.158-166
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• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.