• Title/Summary/Keyword: Ac-Bias

검색결과 112건 처리시간 0.024초

전기적 기판 효과에 따른 nc-Si:H 박막의 나노구조적, 화학적, 기계적 특성 분석

  • 손종익;조남희
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.38.1-38.1
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    • 2011
  • 최근 중동정세의 변화와 유류 소비의 증가에 따른 유가의 급등과, 일본 지진사태로 일어난 원자력 발전의 안정성에 대한 문제로 인하여 안전하고 깨끗하게 에너지를 생산할 수 있는, 저탄소 녹색성장을 구현할 수 있는 신재생 에너지에 관련된 연구에 많은 관심이 모아지고 있다. 특히 태양광 에너지를 전기로 변환하여 사용하는 것은 최근 가장 큰 관심사 중 하나이다. 나노결정 Si (nc-Si) 박막은 이러한 광전자 산업 및 태양 에너지 분야에서의 폭넓은 응용 가능성으로 많은 연구가 진행되고 있다. 이러한 nc-Si 박막의 발광 특성은 비정질 박막내 Si 나노결정에 기인한 양자제한효과(quantum confinement effect)에 의한 것으로 알려져 있다. 본 연구에서는 증착시 기판에 AC (alternating current) Bias를 인가하여 PE CVD 기법으로 nc-Si:H 박막을 증착하였다. H2와 SiH4를 각기 45, 20 sccm으로, 100 W의 RF 전압을 주어 플라즈마를 생성하였으며, 60~900 Hz의 주파수 범위에서 60 V의 Bias를 인가하여 박막을 증착하였다. 이들 박막의 결정 크기, 결정화도, 나노 구조 및 광학적, 화학적, 기계적 특성을 XRD, FT-IR, Raman spectroscopey, AFM, PL, Nano indenter 등을 사용하여 조사하였으며, 기판에 인가된 전압과 주파수에 따른 결정크기와 박막의 광학적 특성과 상관관계를 고찰하였다. Bias 전압에 따라 ~1에서 ~4 nm의 크기를 갖는 나노 크리스탈이 생성 되었으며, 최고 10%의 나노결정 분율을 가지는 박막을 증착하였다. 이는 광학적 특성에도 영향을 주어 PL (photoluminescence)의 피크는 470~710 nm의 영역에서 관찰되었다. 또한 AC-Bias의 영향으로 박막 내 응력 해소에도 영향을 주어 박막내 존재하는 응력이 결정에 미치는 영향도 알 수 있었다. 이번 발표에선 증착 조건에 따른 박막의 나노구조 및 광학적 특성의 변화와 이들 간의 상관관계를 발표하고자 한다.

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한 쌍의 전극으로 전기 삼투 유동과 세포 분쇄 기능을 동시에 구현한 연속적인 세포 분쇄기 (A Continuous Electrical Cell Lysis Chip using a DC Bias Voltage for Cell Disruption and Electroosmotic Flow)

  • 이동우;조영호
    • 대한기계학회논문집A
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    • 제32권10호
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    • pp.831-835
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    • 2008
  • We present a continuous electrical cell lysis chip, using a DC bias voltage to generate the focused high electric field for cell lysis as well as the electroosmotic flow for cell transport. The previous cell lysis chips apply an AC voltage between micro-gap electrodes for cell lysis and use pumps or valves for cell transport. The present DC chip generates high electrical field by reducing the width of the channel between a DC electrode pair, while the previous AC chips reducing the gap between an AC electrode pair. The present chip performs continuous cell pumping without using additional flow source, while the previous chips need additional pumps or valves for the discontinuous cell loading and unloading in the lysis chambers. The experimental study features an orifice whose width and length is 20 times narrower and 175 times shorter than the width and length of a microchannel. With an operational voltage of 50 V, the present chip generates high electric field strength of 1.2 kV/cm at the orifice to disrupt cells with 100% lysis rate of Red Blood Cells and low electric field strength of 60 V/cm at the microchannel to generate an electroosmotic flow of $30{\mu}m/s{\pm}9{\mu}m/s$. In conclusion, the present chip is capable of continuous self-pumping cell lysis at a low voltage; thus, it is suitable for a sample pretreatment component of a micro total analysis system or lab-on-a-chip.

Co-Fe-B 자왜변환기를 이용한 간섭계형 광섬유 자계센서의 동작특성

  • 이경식
    • 한국광학회지
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    • 제4권4호
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    • pp.474-479
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    • 1993
  • Melt-spun법에 의해서 자왜특성을 갖는 Co-Fe-B ribbon을 제작한 후 광섬유 Mach-Zehnder 간섭계의 sensing-arm에 부착하여 간섭형 자계센서를 구성하였다. Co-Fe-B 자왜변환기로 구성된 자계센서의 동작실험 결과 ac 자왜 응답이 최대가 되는 dc 바이어스 자계는 출력이 0인 바이어스 지점으로부터 0.970e 정도 떨어져 있었으며, 최소 감지자장은 3kHz에서 3.9${\times}10^{-5}$ Oe(rms)/${\sqrt{Hz}}$였다. 응답이 최대가 되는 지점에 바이어스를 고정시켰을 때 ac 자계셈서의 출력이 포화되기 시작하는 입력 자계신호는 1 Oe(rms) 근처였다. Co-Fe-B 자왜변환기의 주파수 특성곡선에서 응답이 피크가 되는 주파수는 ~500Hz였다.

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Operational Characteristics of Superconducting Amplifier using Vortex Flux Flow

  • Lim, Sung-Hun
    • Transactions on Electrical and Electronic Materials
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    • 제9권6호
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    • pp.260-264
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    • 2008
  • The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.

고지향성 압전 트랜스듀서용 새로운 고효율 전력 증폭기 (New High-efficiency Power Amplifier System for High-directional Piezoelectric Transducer)

  • 김진영;김인동;문원규
    • 전기학회논문지
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    • 제67권3호
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    • pp.383-390
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    • 2018
  • Piezoelectric micro-machined ultrasonic transducers for highly directional speaker need DC bias voltage. Most existing power amplifiers are not suitable for use in highly directional transducers because they are based on AC. In addition, since the piezoelectric micro-machined ultrasonic transducer has a large capacitive reactance, the power efficiency of the power amplifier is very low. Thus this paper proposes a new high efficiency power amplifier with DC bias voltage. In addition, by designing a matching circuit to compensate the capacitive reactance of the micro-machined ultrasonic transducer, the power efficiency of the power amplifier increases. The operating characteristics of the proposed power amplifier was verified by an experimental prototype. The proposed power amplifier is expected to be widely used in designing and implementing other related power amplifiers.

사파이어 기판 위에 제작된 step-edge dc SQUID magnetometer의 특성 (Characterization of step-edge dc SQUID magnetometer fabricated on sapphire substrate)

  • 임해용;박종혁;정구락;한택상;김인선;박용기
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.127-130
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    • 2002
  • Step-edge dc SQUID magnetometers have been fabricated on sapphire substrate. Ce$O_{2}$ buffer layer and $YBa_{2}$$Cu_{3}$ $O_{7}$(YBCO) films were deposited in-situ on the low angle (~$35^{\circ}$)steps formed on the substrates. Typical 5-$\mu$m-wide junction has $R_{N}$ of 4 $\Omega$ and $I_{c}$ of 60 $\mu$A with $I_{c}$$R_{N}$ product of 240 $\mu$V at 77 K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 100~300 fT/$\checkmark$ Hz at 100 Hz, and about 1.5 pT/$\checkmark$ Hz at 1 Hz. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magneto-cardiogram was measured 50 pT in the magnetically shielded room.

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The Laser Range Finder for the Mobile Robot Navigation using a Lock-in Amplifier

  • Yoon, Hee-Sun;Shin, Myung-Kwan;Park, Kyi-Hwan
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.1423-1426
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    • 2005
  • Map building is the most important thing for the mobile robots navigation. It requires specific vision system such as CCD camera, range finding system, and many other things. Laser range finder has highly collimated beams can be obtained easily, thus achieving lateral resolution. Laser Diode is used for a continuous laser source. The Automatic Current Control Circuit and the Bias-T is used for mix AC signal with DC bias. This signal is used for driving Laser Diode. The main idea of the calculating distance is detecting phase shift between reference signal and detected signal by photo detector. For the signal processing, the Lock-in amplifier system is addressed in this paper. We used a diffused reflected beam to detect phase shift in this system. But this beam is minuteness signal so it can be easily buried in nose. Lock-in amplifier is used to measure the amplitude and phase of signals which are buried in noise.

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작동중인 모스 전계 효과 트랜지스터 단면에서의 상대온도 및 전위 분포 측정 (Cross Sectional Thermal and Electric Potential Imaging of an Operating MOSFET)

  • 권오명
    • 대한기계학회논문집B
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    • 제27권7호
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    • pp.829-836
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    • 2003
  • Understanding of heat generation in semiconductor devices is important in the thermal management of integrated circuits and in the analysis of the device physics. Scanning thermal microscope was used to measure the temperature and the electric potential distribution on the cross-section of an operating metal-oxide-semiconductor field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The measurement results showed that as the drain bias was increased the hot spot moved to the drain. The density of the iso-potential lines near the drain increased with the increase in the drain bias.

Fault Current Limitation by a Superconducting Coil with a Reversely Magnetized Core for a Fault Current Controller

  • Ahn, Min Cheol;Ko, Tae Kuk
    • 한국초전도ㆍ저온공학회논문지
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    • 제14권4호
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    • pp.36-40
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    • 2012
  • This paper presents an experimental and numerical study on current limiting characteristics of a fault current controller (FCC). The FCC consists of an AC/DC power converter, a superconducting coil, and a control unit. Even though some previous researches proved that the FCC could adjust the fault current level, the current limiting characteristics by the superconducting coil should be investigated for design of the coil. In this paper, four kinds of model coils were tested; 1) air core, 2) iron core without any bias, 3) reversely magnetized core (RMC) using permanent magnets, and 4) RMC using an electromagnet. Based on a comparative study, it is confirmed that a RMC by an electromagnet (EM) could increase the effective inductance of the coil. In this paper, a numerical code to simulate the HTS coil with RMC was developed. This code can be applied to design the HTS coil with active reversely magnetized bias coil.

Hydrothermal Growth of ZnO Nanowires Assisted by DC Bias

  • 임영택;정낙천;이선우;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.253.1-253.1
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    • 2013
  • RF 마그네트론 스퍼터링법으로 증착된 Al-doped ZnO 박막을 씨드층으로 하고, zinc nitrate hexahydrate, hexamethylenetetramine (HMTA), ammonium chloride (AC) 및 polyethyleneimine (PEI)를 반응용액으로 한 수열합성법으로 ZnO 나노와이어를 성장시켰다. ZnO 나노와이어의 성장 공정 중 반응 용액내에 DC 바이어스를 인가하고, DC 바이어스의 인가 유무 및 인가 DC 바이어스 전압의 크기 변화에 따라 성장시킨 ZnO 나노와이어의 특성을 비교분석하였다. 다양한 공정변수 변화에 따라 수열합성법으로 성장시킨 ZnO 나노와이어 시편들을 SEM 분석을 통해 특성분석을 수행하였다.

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