• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1182-1189
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• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

• Corrosion Science and Technology
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• v.12 no.1
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• pp.50-55
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• 2013

The purpose of this study was to investigate corrosion characteristics of Ti-xTa alloys with Ta contents. Ti-xTa alloys used as samples (x=30, 40%) were arc-melted under argon atmosphere of 99.9% purity. Ti-xTa alloys were homogenized for 12hr at $1000^{\circ}C$ and then water quenched. The surface characteristics of Ti-xTa alloys were investigated using optical microscopy (OM) and X-ray diffractometer (XRD). The anodic corrosion behaviors of the specimens were examined through potentiodynamic, potentiostatic and galvanostatic test in 0.9 % NaCl solution at $36.5{\pm}1^{\circ}C$. After corrosion test, the surface characteristics of Ti-xTa alloys were investigated using OM. The microstructure of Ti-Ta alloy showed the beta structure with Ta content. The corrosion resistance of Ti alloy was improved by increasing Ta content and the corrosion morphology of Ti-Ta alloy showed that the site attacked by chloride ion decreased from the active to passive region with Ta content. Potential of Ti-40Ta alloy increased as time increased, whereas, current density of Ti-40Ta alloy decreased as time increased compared to Ti-30 alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.60-63
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• 2000

The $0.94MgTiO_3-0.06SrTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. According to the X-ray diffraction patterns of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics, the cubic $SrTiO_3$ and hexagonal $MgTiO_3$ structures were coexisted. Increasing the sintering temperature from $1325^{\circ}C$ to $1400^{\circ}C$, average grain size was increased from $5.026{\mu}m$ to $8.377{\mu}m$. In the case of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics sintered at $1325^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 21.66, 2,522(at 7.34GHz), $+71ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.314-318
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• 2001

SiC-TiC composites have been fabricated by using a mechanochemical processing of a mixture of Si, Ti, and C at room temperature and subsequent hot pressing. TiC powders have been obtained by the mechanochemical processing of a mixture of Ti and C whereas SiC powders has not been obtained from a mixture of Si and C. By using the exothermic reaction between Ti and C, SiC-TiC powder could be obtained from the mixture of Si, Ti, and C using the mechanochemical processing for more than 12h. The X-ray diffraction analysis has shown that the powder subjected to the mechanochemical processing consisted of the particles having crystallite size below 10nm. Fully densified SiC-TiC composites have been obtained by hot-pressing of the powder at 1850$\^{C}$ for 3h and it has shown comparable mechanical properties to those of the SiC-TiC composites prepared from the commercially available SiC and TiC powders. Flexural strength of 560 MPa and fracture toughness of 4.8 MP$.$am$\_$1/2/ have been shown for the SiC-TiC composites with composition corresponding to 0.75:0.25:1 mole ratio of Si:Ti:C.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.63-67
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• 1985

$BaTiO_3$ and $SrTiO_2$ were mixed with the mole ratio of 36:65:50, 50: 50 and 65:35 and then heated at 110$0^{\circ}C$~130$0^{\circ}C$ for 1~64 hrs. The solid state reactions and dielectric properties were investigated as a function of amount of solid solution. Activation energy of solid solution decreased with increasing amount of $BaTiO_3$ due to fast diffusion of $Ba^{2+}$ ions. Dielectric constants increased with increasing the soaking time at 125$0^{\circ}C$and 130$0^{\circ}C$ and Curie Temperature shifted to higher temperature with increasing the soaking time at 125$0^{\circ}C$ and 130$0^{\circ}C$. It attributes to the am-ount of solid solution and grain growth, Dielectric constants decreased and Curie Temperature shifted to lower temperature due to decreasing polari-zability.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1852-1858
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• 1990

The sheet resistance and thickness of Ti-Silicides treated RTA at 600, 700, 800\ulcorner was measured with amount of BF2 implanted in Si substrate. And the profile of BF2 was studied by SIMS. The formation of TiSi2 starts at 700\ulcorner. The Ti-Silicides almost consist of TiSi2 and have a low resistivity about 16列 cm at 800\ulcorner. The sheet resistances of Ti-silicides increase and thicknesses of it decrease with increasing dose of BF2. Considering the results of SIMS and the thickness of native oxide, the decrease of thickness of Silicides chiefly results from the increase of native oxide thickness with increasing dopants.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.27-32
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• 1986

This study is aimed at synthsizing high dielectric material (Ba, Sr)$TiO_3$ through direct wet process. Pure and ultra fine particle of (Ba, Sr)$TiO_3$ Powder was synthesized from $BaCl_2$ $SrCl_2$ and TiCl4 aqeous solution at KOH Solution in the $N_2$ gas atmosphere. $BaCl_2$ $SrCl_2$ and TiCl4 were Mixed with the mole ratio of 1:9, 3:7:10, 5:5:10, 7:3:10, 9:1:10 and sythesized at 4$0^{\circ}C$~9$0^{\circ}C$ for 10min~15hrs. The particle size particle shape crystallinity and synthesis condition of (Ba, Sr)$TiO_3$ powder with the variation of temperature and reaction time in the aqueous solution studied by the exprimental instruments of DTA. TGA, X-ray diffratometer SEM.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.58-63
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• 2004

The oxidation behavior of Ti-Nb alloys was studied in dry atmosphere. After vacuum arc melting and hot rolling treatment, Ti-Nb alloys were oxidized at $450^{\circ}C$∼$750^{\circ}C$. The oxidation behaviors between matrix and oxide scale were analyzed by SEM, XPS and XRD. Ti-Nb alloys had higher oxidation resistance than pure Ti at $750^{\circ}C$. XPS analysis of oxide film revealed that $TiO_2$ oxide was formed on the top of surface. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$ which obey the parabolic law.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.429-434
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• 2001

Ti-Cu-N nanocomposite films deposited by arc ion plating and magnetron sputter hybrid system with various copper contents. The microstructure and mechanical properties of Ti-Cu-N superhard nanocomposite films depend on the Cu concentration. In X-ray diffraction (XRD) analysis, intensity of TiN (111) and TiN (220) peak decreased and peak broadness increased with increasing the copper contents and Cu peak was not detected. The grain size of films decreased with increasing at%Cu and Transmission Electron Microscopy (TEM) analysis also showed that Ti-Cu-N film containing 1.5at%Cu was composed of very fine (<10nm) nanocrystalline grains. The maximum hardness of Ti-Cu-N (1.5at%Cu) film reached to 45GPa and friction coefficient was measured 0.3.