• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.19-25
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• 2005

Ti6Al4V alloy have been mainly used as implant materials. Ti-6Al-4V alloy instead of pure Ti is being widely used as biomaterials has some characteristics such as high fatigue strength, tensile strength. But it has been reported recently that vanadium component expresses cytotoxicity and carcinogenicity and aluminium component is related with dementia of Alzheimer type. In order to overcome their detrimental effects, $\beta$-phase stabilizer Nb was chosen in the present study, in addition Ta and Hf were added to Ti-40wt.%Nb alloy to improve its mechanical properties. This paper was described the influence of heat treatment of Ti-40Nb alloys with 2wt%Ta, 2wt%Hf on the mechanical properties. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at 1050$^{\circ}C$ for 24 hr. and then were aged after solution heat treat at $\alpha+\beta$ and $\beta$ regions. The mechanical properties of Ti alloys were analysed by hardness test, tensile test, elongation test and SEM test. The results can be summarized as follows: 1. The mechanical properties Ti-40wt.%Nb were improved when 2wt.% Ta and 2wt.%Hf were added. 2. The higher tensile strength value and elongation at solution heat treat was higher than solution heat treat and then were aged.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.189-190
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.953-959
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• 2004

BaTiO$_3$ powder has been applied in so much electronic ceramics. Therefore, as recent, the method to add or coat additive will be needed BaTiO$_3$ powder. As a kind of the method, the coating of BaTiO$_3$ powder was considered. In this study, during BaTiO$_3$ powder was coated by BaTiO$_3$ sol, gelation path was experimented. Standard coating condition was set for homogeneous coating. The phase of the gel was deferent by gelation path. It was confirmed the amorphous gel was made in BaTiO$_3$ phase easily at low temperature. In the amorphous gel, particle growth was shown at 900$^{\circ}C$, because crystallization temperature was low. The optimal ratio of sol and powder was at 10 vol% for the homogeneous coating.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.215-224
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• 1991

The synthesis of SrTiO3 powders having high purity and homogeneous submicron particle size was attempted by the oxalate method. The microstructure and dielectric properties of SrTiO3 based boundary layer capacitor (BLC) were investigated. Strontium titanyl oxalate[SrTiO(C2O4)2.4H2O] was prepared from the mixing solution of (Sr, Ti) using oxalic acid(H2C2O4) as a precipitating agent at 8$0^{\circ}C$. The crystalline SrTiO3 powder was obtained by thermal decomposition of the precipitate above $600^{\circ}C$. The crystalline SrTiO3 powder containing Nb2O5 as a dopant, TiO2 and SiO2 as additives was sintered at 1360~144$0^{\circ}C$ in the reducing atmosphere to get semiconductive SrTiO3. Insulating material containing PbO-Bi2O3-B2O3 frit was printed on the sintered semiconductive SrTiO3 and fired at 120$0^{\circ}C$ for 2h to get the grain boundary diffusion.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1960-1961
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.208-213
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• 1998

Silicidation of the Co/Ti/Si bilayer system in which Ti is used as epitaxy promoter for $CoSi_2$has recently received much attention. The Co/Ti bilayer on the spacer oxide of gate electrode must be thermally stable at high temperatures for a salicide transistor to be fabricated successfully. In the $SiO_2$substrate was rapid-thermal annealed. The Sheet resistances of the Co/Ti bilayer increased substantially after annealing at $600^{\circ}C$, which is due to the agglomeration of the Co layer to reduce the interface energy between the Co layer and the $SiO_2$substrate. In the bilayer system insulating Ti oxide stoichiometric Ti oxide and silicide were not found after annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Journal of Powder Materials
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• v.6 no.1
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• pp.103-110
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• 1999

Different sizes of Si powder and milling medium materials (steel and partially stabilized zirconia (PSZ)) were used to synthesize $Ti_3Si$ and $TiSi_2$ by mechanical aollying (MA) of Ti-25.0.at.%Si and Ti-66.7at.% Si powder mixtures. the formation of each titanium silicide did not occur even after 360 min of MA of as-re-ceived Si and Ti powder mixtures due to the lack of homogeneity. $Ti_3Si$, however, was synthesized after 240 min of MA of Ti and 60 min-premilled Si powder mixture. ${\alpha}-TiSi_2$ and $TiSi_2$ were produced by jar milling of Ti and 60 min-premilled Si powder mixture for 48 hr and high -energy PSZ ball-milling in a steel vial for 360 min. The formation of each titanium silicide was characterized by a slow reaction rate as the reactants and product(s) coexisted for a certain period of time. The formation of $Ti_3Si$ and $TiSi_2$ and the reaction rates appeared to be influenced by the Si particle size, the homogeneity of the powder mixtures and the milling medium materials.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.1
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• pp.3-7
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• 2009

Variation in oxidation behavior with heat treatment temperature is investigated for a Ni-Ti alloy using X-ray diffraction, DSC (differential scanning calorimetry) and Auger electron spectroscopy. And the effect of oxidation on transformation behavior and superelasticity is characterized. A cold-worked 50.6Ni-Ti alloy is oxidized at 300-$700^{\circ}C$ for 1 hr in the air atmosphere. With an increase in heating temperature, the structure of $TiO_2$ changes from amorphous (300 and $400^{\circ}C$) to anatase ($500^{\circ}C$), and to rutile ($700^{\circ}C$). Activation energy of oxidation for NiTi is measured to be 51 Kcal/mol when heating temperature is $500^{\circ}C$ or above. Since Ti reacts preferably with oxygen, Ni content increases between matrix and oxide, forming $Ni_{3}Ti$ compounds. The resultant of oxidation decreases significantly $M_s$ and $A_s$ temperature in the specimen oxidized at $900^{\circ}C$ with $B_2{\rightarrow}M$ transformation path. An extra is found on cooling between two peaks in the specimen with $B_2{\rightarrow}R{\rightarrow}M$ one which is oxidized at $900^{\circ}C$ and aged at $500^{\circ}C$. Oxidation deteriorates superelasticity due to formation of Ni-rich compound.