• Mass Spectrometry Letters
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• v.2 no.2
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• pp.41-44
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• 2011

Molecular compositions of two types of heavy oil were studied using positive atmospheric pressure photoionization (APPI) Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS). Vacuum gas oil (VGO) was generated from vacuum distillation of atmospheric residual oil (AR), and slurry oil (SLO) was generated from catalytic cracking of AR. These heavy oils have similar boiling point ranges in the range of 210-$650^{\circ}C$, but they showed different mass ranges and double-bond equivalent (DBE) distributions. Using DBE and carbon number distributions, aromatic ring distributions, and the extent of alkyl side chains were estimated. In addition to the main aromatic hydrocarbon compounds, those containing sulfur, nitrogen, and oxygen heteroatoms were identified using simple sample preparation and ultra-high mass resolution FT-ICR MS analysis. VGO is primarily composed of mono- and di-aromatic hydrocarbons as well as sulfur-containing hydrocarbons, whereas SLO contained mainly polyaromatic hydrocarbons and sulfur-containing hydrocarbons. Both heavy oils contain polyaromatic nitrogen components. SLO inludes shorter aromatic alkyl side chains than VGO. This study demonstrates that APPI FT-ICR MS is useful for molecular composition characterization of petroleum heavy oils obtained from different refining processes.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.352-359
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• 2003

In order to control the grain size, the spark plasma sintering technique is applied for the manufacturing of Cu-26.7Al-4.05AI(wt.%) shape memory alloy with pure Cu, Zn, and Al element powders. The sintering processes were carried out under different atmospheres. The sintered bodies were denser under Ar or Ar＋4%$H_2$gas atmosphere than under vacuum. With use of small-sized powders, a very small average grain size of 2∼3 $\mu\textrm{m}$ was obtained, but the single phase was not formed. With the large-sized powders the single austenitic phase was observed with the average grain size of $70∼72\mu\textrm{m}$. When the different size of raw powders was mixed, it is confirmed that the average grain size of the manufactured alloys was 15 $\mu\textrm{m}$ with single austenitic phase, but the distribution of grain size was not uniform.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.4
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• pp.359-366
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• 2008

Hydrogen as a high-quality and clean energy carrier has attracted renewed and ever-increasing attention around the world in recent years, mainly due to developments in fuel cells and environmental pressures including climate change issues. In this processes for hydrogen production from fossil fuels, separation and purification is a critical technology. $(Ni_{60}-Nb_{40})_{95}-Pd_5$ alloy ingots were prepared by arc-melting the mixture of pure metals in an Ar atmosphere. Melt-spun ribbons were produced by the single-roller melt-spinning technique in an Ar atmosphere. Amorphous structure and thermal behavior were characterized by XRD and DSC. The permeability of the $(Ni_{60}-Nb_{40})_{95}-Pd_5$ amorphous alloy membrane was characterized by hydrogen permeation experiments in the temperature range 623 to 773 K and pressure of 2 bars. The maximum hydrogen permeability was $3.54{\times}10^{-9}[mol{\cdot}m^{-1}s^{-1}{\cdot}pa^{-1/2}]$ at 773 K for the $(Ni_{60}-Nb_{40})_{95}-Pd_5$ amorphous alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Smart Structures and Systems
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• v.5 no.1
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• pp.95-117
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• 2009

In this paper, the time series based damage detection algorithms developed by Nair, et al. (2006) and Nair and Kiremidjian (2007) are applied to the benchmark experimental data from the National Center for Research on Earthquake Engineering (NCREE) in Taipei, Taiwan. Both acceleration and strain data are analyzed. The data are modeled as autoregressive (AR) processes, and damage sensitive features (DSF) and feature vectors are defined in terms of the first three AR coefficients. In the first algorithm developed by Nair, et al. (2006), hypothesis tests using the t-statistic are applied to evaluate the damaged state. A damage measure (DM) is defined to measure the damage extent. The results show that the DSF's from the acceleration data can detect damage while the DSF from the strain data can be used to localize the damage. The DM can be used for damage quantification. In the second algorithm developed by Nair and Kiremidjian (2007) a Gaussian Mixture Model (GMM) is used to model the feature vector, and the Mahalanobis distance is defined to measure damage extent. Additional distance measures are defined and applied in this paper to quantify damage. The results show that damage measures can be used to detect, quantify, and localize the damage for the high intensity and the bidirectional loading cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• Economic and Environmental Geology
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• v.25 no.1
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• pp.51-60
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• 1992

The pluton rocks in Kwangyang-Seungju area consist of two mica granite, hornblende diorite, Rimunri quartz diorite, grnodiorite porphyry and granophyre. The analysis of the geochronological data by the methods of K-Ar for the hornblende from Rimunri quartz diorite and hornblende diorite show that the ages are found to be $86{\pm}3.3$ Ma and $108{\pm}4$ Ma, respectively, and K-Ar age for chlorite from the altered two mica granite which intruded by the hornblende diorite of the Bonjeong mine shows $108{\pm}4$ Ma; K-Ar age for sericite from the greisenized hornblende diorite, which is closely associated with the Bonjeong ore deposits, is dated as $94.2{\pm}2.4$ Ma. They correspond to the igneous activity of the Bulgugsa Disturbance periods in the area. In chemical feature for oxides versus silica and AFM triagular diagrams of the pluton rocks in the study area, there is a suggestion of the possibility that these rock facies area a Calc-alkali series of differentiated products by low-pressure crystal fractionation processes in $SiO_2$-undersaturated suites. Compared with hornblende diorite, andesite and granodiorite porphyry, two mica granite, Rimunri quartz diorite and granophyre exhibit a wider range of normalized REE abundance and negative Eu anomalies. Such anomalies imply more extensive feldspar fractionation during crystallization. The Rimunri quartz diorite and hornblende diorite occurring in the margin of four mines(Bonjeong, Okdong, Soungchei and Saungyeul) of this area have high contents of As, Sb, Cu and Zn which have been shown as the best indicators in hypogene gold deposits and low contents of Ba, Cr served as more sensitive indicators. And the granitoids are regarded as the rocks associated with gold and sulfide mineralization of the area.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.111-116
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• 2010

Chloride-based fluxes such as NaCl-KCl are used in the refining of Al melt. The vapor pressure of the chloride is one of the fundamental pieces of information required for such processes, and is generally high at elevated temperatures. In order to measure the vapor pressure for chlorides, the apparatus for the transpiration method was assembled in the present study. The vapor pressure of $ZnCl_2$ and $FeCl_2$, which is related with the process of aluminum refining and the recovery of useful elements from iron and steel industry by-products, was also measured. In the measurement of vapor pressure by the transpiration method, the powder of $ZnCl_2$ or $FeCl_2$ in a alumina boat was loaded in the uniform zone of the furnace with a stream of Ar. The weight loss of $ZnCl_2$ and $FeCl_2$ after holding was measured by changing the flow rate of Ar gas (10 sccm -230 sccm), and the partial pressures of $ZnCl_2$ and $FeCl_2$ were calculated. The partial pressures within a certain range were found to be independent of the flow rate of Ar at different temperatures. The vapor pressures were measured in the temperature range of 758-901K for $ZnCl_2$ and 963-983K for $FeCl_2$. The measured results agreed well with those in the literature.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.